Vishay Si1539DL Schematic [ru]

PRODUCT SUMMARY

C/W

Si1539DL

Vishay Siliconix

Complementary 30-V (D-S) MOSFET

V

DS

N-Channel 30

P-Channel -30

(V) r

0.480 @ VGS = 10 V 0.63

0.700 @ VGS = 4.5 V 0.52

0.940 @ VGS = -10 V -0.45

1.700 @ VGS = -4.5 V -0.33

(W) I

DS(on)

(A)

D

SOT-363

SC-70 (6-LEADS)

1

S

1

2

G

1

3

D

2

Top View

6

D

1

5

G

2

S

4

2

Marking Code

RC XX

Part # Code

YY

Lot Traceability
and Date Code

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol

Drain-Source Voltage V
Gate-Source Voltage V

a

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current I
Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

TA = 25_C 0.63 0.54 - 0.45 -0.42
TA = 85_C

a

TA = 25_C 0.30 0.27 0.30 0.27
TA = 85_C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71250
S-21374—Rev. B, 12-Aug-02

a

t v 5 sec 360 415

Steady State

N-Channel P-Channel

5 secs Steady State 5 secs Steady State

DS
GS

I

D

DM

I

S

P

D

stg

0.45 0.43 -0.32 -0.31

0.25 0.23 -0.25 -0.23

0.16 0.14 0.16 0.14

30 -30

"20

1.0

-55 to 150 _C

R

thJA

thJF

400 460
300 350

Unit

V

A

W

_C/W

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Si1539DL

W

^

W

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Condition Min Typ Max Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

a

a

a

a

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

fs

SD

Dynamicb

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain

Source-Drain
Reverse Recovery Time

Notes
a. Pulse test; pulse width v
b. Guaranteed by design, not subject to production testing.

300 ms, duty cycle v 2%.

d(on)

d(off)

t

rr

g

gs

gd

r

f

VDS = VGS, I

VDS = VGS, I

VDS = 0 V, VGS = "20 V

= 250 mA N-Ch 1.0

D

= -250 mA P-Ch -1.0

D

N-Ch "100
P-Ch "100

VDS = 24 V, VGS = 0 V N-Ch 1

VDS = -24 V, VGS = 0 V P-Ch -1

VDS = 24 V, VGS = 0 V, TJ = 85_C N-Ch 5

VDS = -24 V, VGS = 0 V, TJ = 85_C P-Ch -5

VDS w 5 V, VGS = 10 V N-Ch 1.0

VDS p -5 V, VGS = -10 V P-Ch -1.0

VGS = 10 V, ID = 0.59 A N-Ch 0.410 0.480

VGS = -10 V, ID = -0.42 A P-Ch 0.800 0.940

VGS = 4.5 V, ID = 0.2 A N-Ch 0.600 0.700

VGS = -4.5 V, ID = -0.2 A P-Ch 1.5 1.700

VDS = 15 V, ID = 0.59 A N-Ch 0.75

VDS = -15 V, ID = -0.42 A P-Ch 0.5

IS = 0.23 A, VGS = 0 V N-Ch 0.8 1.2

IS = -0.23 A, VGS = 0 V P-Ch -0.86 -1.2

N-Ch 0.86 1.4

N-Channel

V

DS

V

= -15 V, VGS = -10 V, ID = -0.42 A

DS

N-Channel

= 15 V, VGS = 10 V, ID = 0.59 A

P-Channel

P-Ch 0.9 1.4
N-Ch 0.24
P-Ch 0.21
N-Ch 0.08
P-Ch 0.17
N-Ch 5 10
P-Ch 4 10

VDD = 15 V, RL = 30

ID ^ 0.5 A, V

V

= -15 V, RL = 30 W

DD

I ^ -0.5 A, V

I

-0.5 A, V

D

N-Channel

= 10 V, RG = 6 W

GEN

P-Channel

P-Channel

= -10 V, R = 6 W

= -10 V, RG = 6

GEN

N-Ch 8 15
P-Ch 8 15
N-Ch 8 15
P-Ch 5 10
N-Ch 7 15
P-Ch 7 15

IF = 0.23 A, di/dt = 100 A/ms N-Ch 15 30

IF = -0.23 A, di/dt = 100 A/ms P-Ch 20 40

V

nA

mA

A

W

S

V

nC

ns

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2-2

Document Number: 71250

S-21374—Rev . B, 12-Aug-02

Si1539DL

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL

1.0
VGS = 10 thru 4 V

0.8

0.6

0.4

- Drain Current (A)I

D

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

1.6

W )

1.2

Output Characteristics Transfer Characteristics

- On-Resistance (r

DS(on)

0.8

0.4

VGS = 4.5 V

3 V

VGS = 10 V

1.0

0.8

0.6

0.4

- Drain Current (A)I

D

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)

TC = 125_C

25_C

Capacitance

60

50

40

30

C - Capacitance (pF)

20

10

C

oss

C

rss

C

iss

-55_C

0.0

0.0 0.2 0.4 0.6 0.8 1.0

10

VDS = 15 V
I

= 0.59 A

D

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0.0 0.2 0.4 0.6 0.8 1.0
Qg - Total Gate Charge (nC)

Document Number: 71250
S-21374—Rev . B, 12-Aug-02

I

- Drain Current (A)

D

Gate Charge

0

048121620

VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Junction Temperature

1.8
VGS = 10 V

I

= 0.59 A

1.6

W)

1.4

1.2

(Normalized)

- On-Resistance (r

1.0

DS(on)

0.8

0.6

D

-50 -25 0 25 50 75 100 125 150
T

- Junction Temperature (_C)

J

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