PRODUCT SUMMARY
C/W
Si1539DL
Vishay Siliconix
Complementary 30-V (D-S) MOSFET
V
DS
N-Channel 30
P-Channel -30
(V) r
0.480 @ VGS = 10 V 0.63
0.700 @ VGS = 4.5 V 0.52
0.940 @ VGS = -10 V -0.45
1.700 @ VGS = -4.5 V -0.33
(W) I
DS(on)
(A)
D
SOT-363
SC-70 (6-LEADS)
1
S
1
2
G
1
3
D
2
Top View
6
D
1
5
G
2
S
4
2
Marking Code
RC XX
Part # Code
YY
Lot Traceability
and Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol
Drain-Source Voltage V
Gate-Source Voltage V
a
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current I
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
_
a
TA = 25_C 0.63 0.54 - 0.45 -0.42
TA = 85_C
a
TA = 25_C 0.30 0.27 0.30 0.27
TA = 85_C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71250
S-21374—Rev. B, 12-Aug-02
a
t v 5 sec 360 415
Steady State
N-Channel P-Channel
5 secs Steady State 5 secs Steady State
DS
GS
I
D
DM
I
S
P
D
stg
0.45 0.43 -0.32 -0.31
0.25 0.23 -0.25 -0.23
0.16 0.14 0.16 0.14
30 -30
"20
1.0
-55 to 150 _C
R
thJA
thJF
400 460
300 350
Unit
V
A
W
_C/W
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2-1
Si1539DL
W
^
W
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol T est Condition Min Typ Max Unit
Static
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
a
a
a
a
GS(th)
GSS
DSS
I
D(on)
r
DS(on)
g
V
fs
SD
Dynamicb
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Source-Drain
Source-Drain
Reverse Recovery Time
Notes
a. Pulse test; pulse width v
b. Guaranteed by design, not subject to production testing.
300 ms, duty cycle v 2%.
d(on)
d(off)
t
rr
g
gs
gd
r
f
VDS = VGS, I
VDS = VGS, I
VDS = 0 V, VGS = "20 V
= 250 mA N-Ch 1.0
D
= -250 mA P-Ch -1.0
D
N-Ch "100
P-Ch "100
VDS = 24 V, VGS = 0 V N-Ch 1
VDS = -24 V, VGS = 0 V P-Ch -1
VDS = 24 V, VGS = 0 V, TJ = 85_C N-Ch 5
VDS = -24 V, VGS = 0 V, TJ = 85_C P-Ch -5
VDS w 5 V, VGS = 10 V N-Ch 1.0
VDS p -5 V, VGS = -10 V P-Ch -1.0
VGS = 10 V, ID = 0.59 A N-Ch 0.410 0.480
VGS = -10 V, ID = -0.42 A P-Ch 0.800 0.940
VGS = 4.5 V, ID = 0.2 A N-Ch 0.600 0.700
VGS = -4.5 V, ID = -0.2 A P-Ch 1.5 1.700
VDS = 15 V, ID = 0.59 A N-Ch 0.75
VDS = -15 V, ID = -0.42 A P-Ch 0.5
IS = 0.23 A, VGS = 0 V N-Ch 0.8 1.2
IS = -0.23 A, VGS = 0 V P-Ch -0.86 -1.2
N-Ch 0.86 1.4
N-Channel
V
DS
V
= -15 V, VGS = -10 V, ID = -0.42 A
DS
N-Channel
= 15 V, VGS = 10 V, ID = 0.59 A
P-Channel
P-Ch 0.9 1.4
N-Ch 0.24
P-Ch 0.21
N-Ch 0.08
P-Ch 0.17
N-Ch 5 10
P-Ch 4 10
VDD = 15 V, RL = 30
ID ^ 0.5 A, V
V
= -15 V, RL = 30 W
DD
I ^ -0.5 A, V
I
-0.5 A, V
D
N-Channel
= 10 V, RG = 6 W
GEN
P-Channel
P-Channel
= -10 V, R = 6 W
= -10 V, RG = 6
GEN
N-Ch 8 15
P-Ch 8 15
N-Ch 8 15
P-Ch 5 10
N-Ch 7 15
P-Ch 7 15
IF = 0.23 A, di/dt = 100 A/ms N-Ch 15 30
IF = -0.23 A, di/dt = 100 A/ms P-Ch 20 40
V
nA
mA
A
W
S
V
nC
ns
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2-2
Document Number: 71250
S-21374—Rev . B, 12-Aug-02
Si1539DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL
1.0
VGS = 10 thru 4 V
0.8
0.6
0.4
- Drain Current (A)I
D
0.2
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
1.6
W )
1.2
Output Characteristics Transfer Characteristics
- On-Resistance (r
DS(on)
0.8
0.4
VGS = 4.5 V
3 V
VGS = 10 V
1.0
0.8
0.6
0.4
- Drain Current (A)I
D
0.2
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)
TC = 125_C
25_C
Capacitance
60
50
40
30
C - Capacitance (pF)
20
10
C
oss
C
rss
C
iss
-55_C
0.0
0.0 0.2 0.4 0.6 0.8 1.0
10
VDS = 15 V
I
= 0.59 A
D
8
6
4
- Gate-to-Source Voltage (V)
GS
2
V
0
0.0 0.2 0.4 0.6 0.8 1.0
Qg - Total Gate Charge (nC)
Document Number: 71250
S-21374—Rev . B, 12-Aug-02
I
- Drain Current (A)
D
Gate Charge
0
048121620
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
VGS = 10 V
I
= 0.59 A
1.6
W)
1.4
1.2
(Normalized)
- On-Resistance (r
1.0
DS(on)
0.8
0.6
D
-50 -25 0 25 50 75 100 125 150
T
- Junction Temperature (_C)
J
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2-3
Si1539DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
1
TJ = 150_C
1.8
1.5
W )
1.2
ID = 0.59 A
0.9
- Source Current (A)I
S
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.4
0.2
-0.0
Variance (V)V
-0.2
GS(th)
-0.4
-0.6
-50 -25 0 25 50 75 100 125 150
TJ - Temperature (_C)
ID = 250 mA
TJ = 25_C
- On-Resistance (r
0.6
DS(on)
0.3
0.0
Power (W)
0246810
Single Pulse Power
5
4
3
2
1
0
-3
10
10
-1
-2
1 100 6001010
Time (sec)
2
1
0.1
Thermal Impedance
Normalized Effective Transient
0.01
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2-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
-4
10
Single Pulse
-3
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
3. TJM - TA = PDMZ
4. Surface Mounted
-2
10
Square Wave Pulse Duration (sec)
-1
1 10 60010
t
1
t
2
t
1
t
2
=400_C/W
thJA
(t)
thJA
100
Document Number: 71250
S-21374—Rev . B, 12-Aug-02
Si1539DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL
2
1
0.1
Thermal Impedance
Normalized Effective Transient
0.01
10
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
-4
Normalized Thermal Transient Impedance, Junction-to-Foot
-3
10
-2
10
Square Wave Pulse Duration (sec)
-1
11010
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL
Output Characteristics Transfer Characteristics
1.0
VGS = 10 thru 5 V
0.8
0.6
0.4
- Drain Current (A)I
D
0.2
2 V
4 V
3 V
1.0
0.8
0.6
0.4
- Drain Current (A)I
D
0.2
TC = -55_C
25_C
125_C
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
3.0
W )
2.5
2.0
VGS = 4.5 V
1.5
- On-Resistance (r
1.0
DS(on)
0.5
0.0
0.0 0.2 0.4 0.6 0.8 1.0
Document Number: 71250
S-21374—Rev . B, 12-Aug-02
ID - Drain Current (A)
VGS = 10 V
0.0
012345
VGS - Gate-to-Source Voltage (V)
Capacitance
80
C
60
40
C - Capacitance (pF)
20
C
0
048121620
C
oss
rss
VDS - Drain-to-Source Voltage (V)
iss
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2-5
Si1539DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL
Gate Charge
10
VDS = 15 V
= 0.42 A
I
D
8
6
4
- Gate-to-Source Voltage (V)
GS
2
V
0
0.0 0.2 0.4 0.6 0.8 1.0
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
1
TJ = 150_C
On-Resistance vs. Junction Temperature
1.6
VGS = 10 V
= 0.42 A
I
W)
(Normalized)
- On-Resistance (r
DS(on)
3.0
2.5
W )
2.0
1.5
D
1.4
1.2
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
T
- Junction Temperature (_C)
J
ID = 0.42 A
- Source Current (A)I
S
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.6
0.4
0.2
Variance (V)V
0.0
GS(th)
-0.2
-0.4
-50 -25 0 25 50 75 100 125 150
TJ - Temperature (_C)
ID = 250 mA
TJ = 25_C
- On-Resistance (r
1.0
DS(on)
0.5
0.0
5
4
3
Power (W)
2
1
0
0246810
Single Pulse Power
-1
-2
-3
10
10
1 100 6001010
Time (sec)
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2-6
Document Number: 71250
S-21374—Rev . B, 12-Aug-02
Si1539DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
t
1
t
1. Duty Cycle, D =
2. Per Unit Base = R
3. TJM - TA = PDMZ
4. Surface Mounted
2
thJA
100
thJA
t
1
t
2
(t)
= 400_C/W
0.1
Thermal Impedance
Normalized Effective Transient
0.01
10
2
-4
0.1
0.05
0.02
Single Pulse
-3
10
-2
10
-1
1 10 60010
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
0.1
Thermal Impedance
Normalized Effective Transient
0.01
-4
10
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
-3
10
-2
10
-1
11010
Square Wave Pulse Duration (sec)
Document Number: 71250
S-21374—Rev . B, 12-Aug-02
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2-7
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Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
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Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
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