Vishay Si1488DH Schematic

Si1488DH

N-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V) r

0.049 at V

20

0.056 at V

0.065 at V

SC-70 (6-LEADS)

D

1

D

2

G

3

Ordering Information: Si1488DH-T1-E3 (Lead (Pb)-free)

(Ω)I

DS(on)

= 4.5 V

GS

= 2.5 V 5.7

GS

= 1.8 V 5.3

GS

SOT-363

6

5

4

To p View

(A) Qg (Typ)

D

a

6.1

D

S

New Product

6.0

Marking Code

AG XX

Y Y

Part # Code

FEATURES

•TrenchFET® Power MOSFET

• 100 % R

& UIS Tested

g

APPLICATIONS

• Load Switch for Portable Devices

Lot Traceability and Date Code

G

Vishay Siliconix

RoHS

COMPLIANT

D

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

= 150 °C)

J

a

Avalanche Current

Repetitive Avalanche Energy

Continuous Source-Drain Diode Current

Maximum Power Dissipationa

Operating Junction and Storage Temperature Range

TC = 25 °C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

L = 0.1 mH

= 25 °C

T

C

= 25 °C

T

A

T

= 25 °C

C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

20

± 8

V

6.1

I

D

I

DM

I

AS

E

AS

I

S

4.9

b, c

4.6

3.7

b, c

A

20

10

5mJ

1.3

2.3

b, c

A

2.8

P

D

, T

T

J

stg

1.5

1.0

1.8

b, c

W

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Based on T b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 sec. d. Maximum under Steady State conditions is 125 °C/W.

= 25 °C.

C

b, d

t ≤ 5 sec

R

thJA

R

thJF

60 80

34 45

°C/W

Document Number: 73788 S-61085–Rev. C, 19-Jun-06

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1

Si1488DH

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

V

= 0 V, ID = 250 µA

GS

ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

= 20 V, VGS = 0 V

DS

= 20 V, V

V

DS

V

GS

V

GS

V

GS

V

DS

= 10 V, V

DS

= 10 V, V

DS

= 10 V, V

= 0 V, TJ = 85 °C

GS

= ≥ 5 V, V

= 4.5 V 20 A

GS

= 4.5 V, ID = 4.6 A

= 2.5 V, ID = 4.3 A

= 1.8 V, ID = 3.9 A

= 10 V, ID = 4.6 A

= 0 V, f = 1 MHz

GS

= 5 V, ID = 4.6 A

GS

= 4.5 V, ID = 4.6 A

GS

f = 1 MHz 7.3 11 Ω

V

= 10 V, RL = 2.7 Ω

DD

= 4.5 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 2.2 A

IF = 3.2 A, di/dt = 100 A/µs

20 V

20.2

- 2.75

mV/°C

0.45 0.95 V

± 100 nA

1µA

10 µA

0.041 0.049

0.047 0.056

0.054 0.065

15 mS

530

100

48

6.6 10

69

1.5

0.9

8.5 13

45 68

35 53

82 123

2.3

20

0.8 1.2 V

10.6 16 nC

3.7 5.7

6.2

4.4

Ω

pFOutput Capacitance

pC

ns

A

nsReverse Recovery Fall Time

ΔV

V

I

r

DS(on)

C

t

V

DS

GS(th)

T

J

GS(th)

GSS

DSS

D(on)

g

fs

C

iss

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

d(on)

t

r

d(off)

t

f

J

/

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/T

DS

Temperature Coefficient

V

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

a

Forward Transconductance

Dynamic

b

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n - O n D e l ay Time

Rise Time

Turn-Off DelayTime

Fall Ti me

Drain-Source Body Diode Characteristics

Continous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

≅ 3.7 A, V

I

D

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 73788

S-61085–Rev. C, 19-Jun-06

TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

20

VGS = 5 V thru 2.5 V

15

)A( tnerruC niarD –I

10

VGS = 1.5 V

VGS = 2 V

)A( tnerruC niarD –I

Si1488DH

Vishay Siliconix

5

4

3

2

5

D

VGS = 1 V

0

0.0 0.6 1.2 1.8 2.4 3.0

– Drain-to-Source Voltage (V)

V

DS

Output Characteristics

0.09

0.08

( ecnatsi

0.07

s eR-nO – )

0.06

)no

0.05

( SD

r

0.04

0.03 0 4 8 12 16 20

VGS = 1.8 V

– Drain Current (A)

I

D

VGS = 2.5 V

On-Resistance vs. Drain Current

VGS = 4.5 V

D

1

0

0.0 0.4 0.8 1.2 1.6 2.0

TJ = 25 °C

TJ = 125 °C

TJ = - 55 °C

VGS – Gate-to-Source Voltage (V)

Transfer Characteristics curves vs. Temp

800

)Fp( ecnat

600

icapa

400

C – C

200

C

rss

0

0 4 8 121620

C

iss

C

oss

VDS – Drain-Source Voltage (V)

Capacitance

5

)V (

ega t

loV

e c

r uoS

-ot

-e taG –

SG

V

ID = 4.6 A

4

3

2

1

0

02468

Document Number: 73788 S-61085–Rev. C, 19-Jun-06

VDS = 10 V

VDS = 16 V

Qg – Total Gate Charge (nC)

- Gate Charge

Q

g

1.8

1.6

ec

1.4

n

)

atsiseR-nO

dez i

lam

1.2

ro

N

(

–

)n

1.0

o

(S D

r

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

VGS = 2.5 V, ID = 4.3 A V

= 1.8 V, ID = 3.9 A

GS

VGS = 4.5 V, ID = 4.6 A

TJ– Junction Temperature (°C)

On-Resistance vs. Junction Temperature

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Vishay Si1488DH Schematic [ru]