Vishay Si1488DH Schematic [ru]

Si1488DH

N-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V) r

0.049 at V

20

0.056 at V

0.065 at V

SC-70 (6-LEADS)

D

1

D

2

G

3

Ordering Information: Si1488DH-T1-E3 (Lead (Pb)-free)

(Ω)I

DS(on)

= 4.5 V

GS

= 2.5 V 5.7

GS

= 1.8 V 5.3

GS

SOT-363

6

5

4

To p View

(A) Qg (Typ)

D

a

6.1

D

D

S

New Product

6.0

Marking Code

AG XX

Y
Y

Part # Code

FEATURES

•TrenchFET® Power MOSFET

• 100 % R

& UIS Tested

g

APPLICATIONS

• Load Switch for Portable Devices

Lot Traceability
and Date Code

G

Vishay Siliconix

RoHS

COMPLIANT

D

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

= 150 °C)

J

a

Avalanche Current

Repetitive Avalanche Energy

Continuous Source-Drain Diode Current

Maximum Power Dissipationa

Operating Junction and Storage Temperature Range

TC = 25 °C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

L = 0.1 mH

= 25 °C

T

C

= 25 °C

T

A

T

= 25 °C

C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

20

± 8

V

6.1

I

D

I

DM

I

AS

E

AS

I

S

4.9

b, c

4.6

3.7

b, c

A

20

10

5mJ

1.3

2.3

b, c

A

2.8

P

D

, T

T

J

stg

1.5

1.0

1.8

b, c

b, c

W

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State

Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 125 °C/W.

= 25 °C.

C

b, d

t ≤ 5 sec

R

thJA

R

thJF

60 80

34 45

°C/W

Document Number: 73788
S-61085–Rev. C, 19-Jun-06

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1

Si1488DH

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

V

= 0 V, ID = 250 µA

GS

ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

= 20 V, VGS = 0 V

DS

= 20 V, V

V

DS

V

GS

V

GS

V

GS

V

DS

= 10 V, V

DS

= 10 V, V

DS

= 10 V, V

= 0 V, TJ = 85 °C

GS

= ≥ 5 V, V

= 4.5 V 20 A

GS

= 4.5 V, ID = 4.6 A

= 2.5 V, ID = 4.3 A

= 1.8 V, ID = 3.9 A

= 10 V, ID = 4.6 A

= 0 V, f = 1 MHz

GS

= 5 V, ID = 4.6 A

GS

= 4.5 V, ID = 4.6 A

GS

f = 1 MHz 7.3 11 Ω

V

= 10 V, RL = 2.7 Ω

DD

= 4.5 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 2.2 A

IF = 3.2 A, di/dt = 100 A/µs

20 V

20.2

- 2.75

mV/°C

0.45 0.95 V

± 100 nA

1µA

10 µA

0.041 0.049

0.047 0.056

0.054 0.065

15 mS

530

100

48

6.6 10

69

1.5

0.9

8.5 13

45 68

35 53

82 123

2.3

20

0.8 1.2 V

10.6 16 nC

3.7 5.7

6.2

4.4

Ω

pFOutput Capacitance

pC

ns

A

nsReverse Recovery Fall Time

ΔV

V

I

I

I

r

DS(on)

C

t

t

V

DS

GS(th)

T

J

GS(th)

GSS

DSS

D(on)

g

fs

C

iss

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

d(on)

t

r

d(off)

t

f

J

/

Drain-Source Breakdown Voltage
V

Temperature Coefficient ΔVDS/T

DS

Temperature Coefficient

V

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

a

a

Forward Transconductance

Dynamic

b

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n - O n D e l ay Time

Rise Time

Turn-Off DelayTime

Fall Ti me

Drain-Source Body Diode Characteristics

Continous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

V

DS

V

V

V

DS

≅ 3.7 A, V

I

D

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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Document Number: 73788

S-61085–Rev. C, 19-Jun-06

TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

20

VGS = 5 V thru 2.5 V

15

)A( tnerruC niarD –I

10

VGS = 1.5 V

VGS = 2 V

)A( tnerruC niarD –I

Si1488DH

Vishay Siliconix

5

4

3

2

5

D

VGS = 1 V

0

0.0 0.6 1.2 1.8 2.4 3.0

– Drain-to-Source Voltage (V)

V

DS

Output Characteristics

0.09

0.08

( ecnatsi

0.07

s
eR-nO – )

0.06

)no

0.05

(
SD

r

0.04

0.03
0 4 8 12 16 20

VGS = 1.8 V

– Drain Current (A)

I

D

VGS = 2.5 V

On-Resistance vs. Drain Current

VGS = 4.5 V

D

1

0

0.0 0.4 0.8 1.2 1.6 2.0

TJ = 25 °C

TJ = 125 °C

TJ = - 55 °C

VGS – Gate-to-Source Voltage (V)

Transfer Characteristics curves vs. Temp

800

)Fp( ecnat

600

icapa

400

C
– C

200

C

rss

0

0 4 8 121620

C

iss

C

oss

VDS – Drain-Source Voltage (V)

Capacitance

5

)V
(

ega
t

loV

e
c

r
uoS

-ot

-e
taG –

SG

V

ID = 4.6 A

4

3

2

1

0

02468

Document Number: 73788
S-61085–Rev. C, 19-Jun-06

VDS = 10 V

VDS = 16 V

Qg – Total Gate Charge (nC)

- Gate Charge

Q

g

1.8

1.6

ec

1.4

n

)

atsiseR-nO

dez
i

lam

1.2

ro

N

(

–

)n

1.0

o

(S
D

r

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

VGS = 2.5 V, ID = 4.3 A
V

= 1.8 V, ID = 3.9 A

GS

VGS = 4.5 V, ID = 4.6 A

TJ– Junction Temperature (°C)

On-Resistance vs. Junction Temperature

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Si1488DH

Vishay Siliconix

TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

20
10

0.12

ID = 4.6 A

)A( tnerruC ecruoS –I

1

T

= 150 °C

0.1

S

0.01

0.001

J

0.0 0.2 0.4 0.6 0.8 1.0 1.2

V

– Source-to-Drain Voltage (V)

SD

T

= 25 °C

J

Source-Drain Diode Forward Voltage

1.0

0.8

)V( ecna

0.6

i
r

a
V

)ht(SG

0.4

V

0.2

ID = 250 µA

0.09

( ecnatsiseR-nO – Ω)

0.06

)no(SD

0.03

r

0.00
012345

r

30

25

20

)W(

rewoP

15

10

5

TA = 25 °C

VGS – Gate-to-Source Voltage (V)

vs VGS vs Temperature

DS(on)

TA = 125 °C

0.0

- 50 - 25 0 25 50 75 100 125 150

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TJ – Temperature (°C)

Threshold Voltage

)
A(tner

r
uCniarD–

D

I

0

100

* Limited by r

10

1

0.1

0.01

Single Pulse

0.001

0.1 1 100

* V

GS

DS(on)

BVDSS Limited

TA = 25 °C

– Drain-to-Source Voltage (V)

V

DS

> minimum VGS at which r

10

DS(on)

1 ms

10 ms

100 ms

1 s

10 s

dc

is specified

Safe Operating Area, Junction-to-Ambient

0.1

1 6001000.001

Time (sec)

Single Pulse Power

Document Number: 73788

S-61085–Rev. C, 19-Jun-06

100.01

TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

8

3.5

Si1488DH

Vishay Siliconix

6

)A( tnerruC niarD –

Package Limited

4

D

I

2

0

0 25 50 75 100 125 150

TC – Case Temperature (°C)

Current Derating*

2.8

)W( noitapissiD rewoP

2.1

1.4

0.7

0.0
0 25 50 75 100 125 150

T

– Case Temperature (°C)

C

Power Derating

* The power dissipation PD is based on T
sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-

J(max)

limit.

Document Number: 73788

www.vishay.com

S-61085–Rev. C, 19-Jun-06

5

Si1488DH

Vishay Siliconix

TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

2

tneisnarT evitceffE dezilamroN

1

Duty Cycle = 0.5

ecnadepmI lamrehT

0.2

Notes:

P

DM

t

1

t

– TA = PDMZ

JM

2

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface Mounted

t

1

t

2

= 100 ° C/W

thJA

(t)

thJA

100

0.1

0.01

0.1

0.05

0.02

Single Pulse

-4

10

-3

10

-2

10

-1

110 60010

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

tneisnarT

e

v

i

tc
e

f

f
E

de
zi

lamroN

1

Duty Cycle = 0.5

ecnade

0.1

0.2

0.1

0.05

p
mI
lam

r
e
h
T

0.02

Single Pulse

0.01

-4

10

-3

10

-2

10

-1

11010

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech­nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73788.

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Document Number: 73788

S-61085–Rev. C, 19-Jun-06

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1