Vishay Si1469DH Schematic

Si1469DH

P-Channel 20-V (G-S) MOSFET

PRODUCT SUMMARY

VDS (V) r

0.080 at V

- 20

0.155 at V

SOT-363

SC-70 (6-LEADS)

D

1

D

2

G

3

Top V i ew

Ordering Information: Si1469DH-T1-E3 (Lead (Pb)-free)

(Ω)

DS(on)

= - 10 V - 1.6

GS

= - 4.5 V - 1.6

GS

= - 2.5 V - 1.6

GS

D

6

5

D

S

4

Marking Code

BL XX

I

(A)

D

Par t # Code

New Product

c

Qg (Typ)

5.5 nC0.100 at V

YY

Lot Traceability and Date Code

FEATURES

• TrenchFET® Power MOSFET

APPLICATIONS

• Load Switch for Portable Devices

S

G

D

P-Channel MOSFET

Vishay Siliconix

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a, b

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source-Drain Diode Current

Maximum Power Dissipation

a, b

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

c, d

TC = 25 °C

T

= 70 °C

C

TA = 25 °C

TA = 70 °C

TC = 25 °C

TA = 25 °C

TC = 25 °C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

P

D

, T

T

J

stg

- 20

± 12

c

-1.6

c

- 1.6

a, b, c

- 1.6

a, b, c

- 1.6

c

- 6.5

c

- 1.6

a, b, c

- 1.6

2.78

1.78

a, b

2.5

a, b

1

- 55 to 150

260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a, d

t ≤ 5 sec

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 sec. c. Package limited. d. Maximum under Steady State conditions is 125 °C/W.

R

thJA

R

thJF

60 80

34 45

°C/W

Document Number: 74441 S-70195-Rev. A, 29-Jan-07

www.vishay.com

1

Si1469DH

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Qgs

Q

t

d(on)

t

d(off)

t

d(on)

t

d(off)

gd

R

g

t

r

t

f

t

r

t

f

Gate-Drain Charge

Gate Resistance

Tur n - On D e l a y T im e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n - On D e l a y T im e

Rise Time

Turn-Off Delay Time

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = - 250 µA

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 12 V

V

DS

= - 20 V, V

DS

= - 20 V, V

V

GS

V

GS

V

GS

≤ 5 V, V

DS

= - 10 V, ID = - 2.0 A

= - 4.5 V, ID = - 1.8 A

= - 2.5 V, ID = - 1.5 A

= 0 V

GS

= 0 V, TJ = 55 °C

= - 4.5 V

GS

VDS = - 10 V, ID = - 2.0 A

VDS = - 10 V, V

= 0 V, f = 1 MHz

GS

= - 4.5 V, ID = - 2.5 A

GS

f = 1 MHz 10 Ω

V

= - 10 V, RL = 5 Ω

DD

≅ - 2 A, V

I

D

≅ - 2 A, V

I

D

V

= - 4.5 V, Rg = 1 Ω

GEN

= - 10 V, RL = 5 Ω

DD

= - 10 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = - 2 A, V

GS

= 0 V

IF = - 2.0 A, di/dt = 100 A/µs, TJ = 25 °C

- 20 V

- 21

- 2.4

mV/°C

- 0.6 - 1.5 V

- 100 nA

- 1

- 10

µA

- 3 A

0.065 0.080

0.081 0.100

0.126 0.155

6S

470

105

80

5.5 8.5

0.8

nCGate-Source Charge

1.7

27 41

48 72

27 41

15 23

510

20 30

22 33

918

- 1.6

- 6.5

- 0.83 - 1.2 V

20 30 ns

815nC

7

13

Ω

pFOutput Capacitance

ns

A

ns

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Document Number: 74441

S-70195-Rev. A, 29-Jan-07

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si1469DH

Vishay Siliconix

10

8

6

4

- Drain Current (A)I D

2

0

0.0 0.6 1.2 1.8 2.4 3.0

VDS - Drain-to-Source Voltage (V)

VGS = 10 thru 3 V

2 V

Output Characteristics

0.20

0.16

)

VGS = 2.5 V

0.12

2.5

2.0

1.5

T

C

TC = 125 °C

= 25 °C

T

C

1.0

- Drain Current (A)I D

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5

VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

800

640

C

iss

480

= - 55 °C

- On-Resistance (r

VGS = 4.5 V

0.0

8

DS(on)

0.04

0.00

0.0 1.4 2.8 4.2 5.6 7.0

VGS = 10 V

ID - Drain Current (A)

On-Resistance vs. Drain Current and Gate Voltage

10

ID = 2.5 A

8

6

4

- Gate-to-Source Voltage (V)V

GS

2

0

0 3 6 9 12 15

VDS = 5 V

VDS = 10 V

VDS = 15 V

Qg - Total Gate Charge (nC)

Gate Charge

C - Capacitance (pF)

- On-Resistance (Normalized)

DS(on)

r

320

C

160

C

rss

0

048 12 16 20

oss

VDS - Drain-to-Source Voltage (V)

Capacitance

1.6

ID = 2 A

1.4

1.2

1.0

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

TJ- Junction Temperature (°C)

VGS = 2.5 V

VGS = 10 V

On-Resistance vs. Junction Temperature

Document Number: 74441 S-70195-Rev. A, 29-Jan-07

www.vishay.com

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Vishay Si1469DH Schematic [ru]