Vishay Si1426DH Schematic [ru]
Si1426DH
C/W
PRODUCT SUMMARY
V
(V) r
DS
30
DS(on)
0.075 @ VGS = 10 V
0.115 @ VGS = 4.5 V 2.9
New Product
N-Channel 30-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
(W) I
SOT-363
SC-70 (6-LEADS)
1
D
2
D
3
G
Top View
(A)
D
3.6
D
6
5
D
S
4
D Thermally Enhanced SC-70 Package
D PWM Optimized
APPLICATIONS
D Boost Converter in Portable Devices
– Low Gate Charge (3 nC)
D Low Current Synchronous Rectifier
Marking Code
AC XX
YY
Lot Traceability
and Date Code
Part # Code
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage V
Gate-Source Voltage V
a
a
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current I
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
_
a
a
TA = 25_C
TA = 85_C
TA = 25_C 1.6 1.0
TA = 85_C
P
I
DM
I
DS
GS
D
S
D
stg
3.6
2.6 2.1
1.3 0.8
0.8 0.5
30
"20
10
–55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State R
a
t v 5 sec 60 80
Steady State
R
thJA
thJF
100 125
34 45
V
2.8
A
W
_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71805
S-05803—Rev. A, 18-Feb-02
www.vishay.com
1
Si1426DH
W
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol T est Condition Min Typ Max Unit
Static
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Source-Drain Reverse Recovery t
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
b
a
a
a
a
GS(th)
GSS
DSS
I
D(on)
r
DS(on)
g
V
d(on)
d(off)
fs
SD
g
gs
gd
r
f
rr
VDS = VGS, I
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V 1
VDS = 24 V, VGS = 0 V, TJ = 85_C 5
VDS = 5 V, VGS = 10 V 10 A
VGS = 10 V, ID = 3.6 A 0.061 0.075
VGS = 4.5 V, ID = 2.0 A 0.092 0.115
VDS = 10 V, ID = 3.6 A 5 S
IS = 1.3 A, VGS = 0 V 0.78 1.2 V
V
= 15 V, VGS = 4.5 V, ID = 3.6 A 0.75 nC
DS
VDD = 15 V, RL = 15 W
VDD = 15 V, RL = 15
ID ^ 1 A, V
IF = 1.4 A. di/dt = 100/ms 40 70
= 250 mA 0.80 2.5 V
D
= 10 V, RG = 6 W
GEN
1.9 3
0.75
10 15
12 18
15 22
9 15
"100 nA
mA
W
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
8
6
4
– Drain Current (A)I
D
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
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2
Output Characteristics Transfer Characteristics
VGS = 10 thru 5 V
VDS – Drain-to-Source Voltage (V)
4 V
3 V
10
8
6
4
– Drain Current (A)I
D
2
0
012345
TC = 125_C
25_C
–55_C
VGS – Gate-to-Source Voltage (V)
Document Number: 71805
S-05803—Rev. A, 18-Feb-02
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