Si1426DH
C/W
PRODUCT SUMMARY
V
(V) r
DS
30
DS(on)
0.075 @ VGS = 10 V
0.115 @ VGS = 4.5 V 2.9
New Product
N-Channel 30-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
(W) I
SOT-363
SC-70 (6-LEADS)
1
D
2
D
3
G
Top View
(A)
D
3.6
D
6
5
D
S
4
D Thermally Enhanced SC-70 Package
D PWM Optimized
APPLICATIONS
D Boost Converter in Portable Devices
– Low Gate Charge (3 nC)
D Low Current Synchronous Rectifier
Marking Code
AC XX
YY
Lot Traceability
and Date Code
Part # Code
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage V
Gate-Source Voltage V
a
a
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current I
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
_
a
a
TA = 25_C
TA = 85_C
TA = 25_C 1.6 1.0
TA = 85_C
P
I
DM
I
DS
GS
D
S
D
stg
3.6
2.6 2.1
1.3 0.8
0.8 0.5
30
"20
10
–55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State R
a
t v 5 sec 60 80
Steady State
R
thJA
thJF
100 125
34 45
V
2.8
A
W
_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71805
S-05803—Rev. A, 18-Feb-02
www.vishay.com
1
Si1426DH
W
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol T est Condition Min Typ Max Unit
Static
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Source-Drain Reverse Recovery t
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
b
a
a
a
a
GS(th)
GSS
DSS
I
D(on)
r
DS(on)
g
V
d(on)
d(off)
fs
SD
g
gs
gd
r
f
rr
VDS = VGS, I
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V 1
VDS = 24 V, VGS = 0 V, TJ = 85_C 5
VDS = 5 V, VGS = 10 V 10 A
VGS = 10 V, ID = 3.6 A 0.061 0.075
VGS = 4.5 V, ID = 2.0 A 0.092 0.115
VDS = 10 V, ID = 3.6 A 5 S
IS = 1.3 A, VGS = 0 V 0.78 1.2 V
V
= 15 V, VGS = 4.5 V, ID = 3.6 A 0.75 nC
DS
VDD = 15 V, RL = 15 W
VDD = 15 V, RL = 15
ID ^ 1 A, V
IF = 1.4 A. di/dt = 100/ms 40 70
= 250 mA 0.80 2.5 V
D
= 10 V, RG = 6 W
GEN
1.9 3
0.75
10 15
12 18
15 22
9 15
"100 nA
mA
W
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
8
6
4
– Drain Current (A)I
D
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
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2
Output Characteristics Transfer Characteristics
VGS = 10 thru 5 V
VDS – Drain-to-Source Voltage (V)
4 V
3 V
10
8
6
4
– Drain Current (A)I
D
2
0
012345
TC = 125_C
25_C
–55_C
VGS – Gate-to-Source Voltage (V)
Document Number: 71805
S-05803—Rev. A, 18-Feb-02
Si1426DH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.16
W )
0.12
VGS = 4.5 V
0.08
– On-Resistance (r
DS(on)
0.04
0.00
0246810
– Drain Current (A)
I
D
Gate Charge
10
VDS = 15 V
I
= 3.6 A
D
8
VGS = 10 V
250
200
150
100
C – Capacitance (pF)
50
0
0 6 12 18 24 30
On-Resistance vs. Junction Temperature
1.8
VGS = 10 V
I
1.6
W)
Vishay Siliconix
Capacitance
C
oss
C
rss
VDS – Drain-to-Source Voltage (V)
= 3.6 A
D
C
iss
– Gate-to-Source Voltage (V)
GS
V
– Source Current (A)I
S
1.4
6
1.2
(Normalized)
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Qg – Total Gate Charge (nC)
– On-Resistance (r
1.0
DS(on)
0.8
0.6
–50 –25 0 25 50 75 100 125 150
T
– Junction Temperature (_C)
J
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
W )
– On-Resistance (r
DS(on)
0.20
0.16
0.12
0.08
0.04
ID = 1 A
ID = 3.6 A
10
1
TJ = 150_C
TJ = 25_C
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
Document Number: 71805
S-05803—Rev. A, 18-Feb-02
0.00
0246810
www.vishay.com
3
Si1426DH
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
0.2
ID = 250 mA
–0.0
–0.2
Variance (V)V
GS(th)
–0.4
–0.6
–0.8
–50 –25 0 25 50 75 100 125 150
TJ – Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
30
25
20
15
Power (W)
10
5
0
Single Pul s e P o w e r
1 6001000.001
0.1
Time (sec)
100.01
1
0.1
Thermal Impedance
Normalized Effective Transient
0.01
10
2
1
0.1
Thermal Impedance
Normalized Effective Transient
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Single Pulse
–3
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. TJM – TA = PDMZ
4. Surface Mounted
–2
10
–1
1 10 60010
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
P
DM
t
1
t
2
t
1
t
2
=100_C/W
thJA
(t)
thJA
100
0.01
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4
–4
10
–3
10
–2
10
–1
11010
Square Wave Pulse Duration (sec)
Document Number: 71805
S-05803—Rev. A, 18-Feb-02
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
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