Vishay Si1305DL Schematic [ru]

P-Channel 1.8-V (G-S) MOSFET

Conti

t (TJ = 150_C)

a

I

A

C/W

Si1305DL

Vishay Siliconix

PRODUCT SUMMARY

V

(V) r

DS

−8

DS(on)

0.280 @ VGS = −4.5 V

0.380 @ VGS = −2.5 V −0.79

0.530 @ VGS = −1.8 V −0.67

(W) I

D

−0.92

SOT-323

SC-70 (3-LEADS)

1

G

2

S

Top View

Ordering Information: Si1305DL--T1

Si1305DL--T1—E3 (Lead (Pb)-Free)

(A)

FEATURES

D TrenchFETr Power MOSFET: 1.8 V Rated

RoHS

COMPLIANT

3

D

Marking Code

LB XX

Part # Code

YY

Lot Traceability
and Date Code

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 5 secs Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

a

=

nuous Drain Curren

Pulsed Drain Current I

Continuous Diode Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

a

TA = 25_C

TA = 70_C

TA = 25_C

TA = 70_C

P

DM

I

DS

GS

D

S

D

stg

−0.92

−0.74 −0.69

−0.28 −0.24

0.34 0.29

0.22 0.19

−8

"8

−3

−55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

a

t v 5 sec

Steady State

R

thJA

thJF

315 375

360 430

285 340

V

−0.86

W

_C/W

Document Number: 71076
S-51075—Rev. D, 13-Jun-05

www.vishay.com

1

Si1305DL

DS(on)

VDD = −4 V, RL = 4 W

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

a

GS(th)

GSS

DSS

I

D(on)

VDS = VGS, I

= −250 mA −0.45 V

D

VDS = 0 V, VGS = "8 V "100 nA

VDS = −8 V, VGS = 0 V −1

VDS = −8 V, VGS = 0 V, TJ = 70_C −5

VDS = −5 V, VGS = −4.5 V −3 A

mA

VGS = −4.5 V, ID = −1 A 0.230 0.280

Drain-Source On-State Resistance

a

r

DS(on)

VGS = −2.5 V, ID = −0.5 A 0.315 0.380

W

VGS = −1.8 V, ID = −0.3 A 0.440 0.530

Forward Transconductance

Diode Forward Voltage

Dynamic

b

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain Reverse Recovery Time t

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

a

a

g

V

SD

d(on)

d(off)

rr

fs

VDS = −5 V, ID = −1 A

3.5 S

IS = −0.3 A, VGS = 0 V −1.2 V

g

V

gs

gd

= −4 V, VGS = −4.5 V, ID = −1 A 0.6 nC

DS

2.6 4

0.5

8 15

r

f

VDD = −4 V, RL = 4 W

ID ^ −1 A, V

= −4.5 V, Rg = 6 W

GEN

55 80

17 25

12 20

ns

IF = −1 A, di/dt = 100 A/ms 27 45

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

8

6

4

− Drain Current (A)I

D

2

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

www.vishay.com

2

VDS − Drain-to-Source Voltage (V)

VGS = 4.5 V

4 V

3.5 V

3 V

2.5 V

2 V

1.5 V

1 V

6

5

TC = −55_C

25_C

4

3

2

− Drain Current (A)I

D

1

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VGS − Gate-to-Source Voltage (V)

Document Number: 71076

S-51075—Rev. D, 13-Jun-05

125_C