Datasheet Si1305DL Datasheet (Vishay) [ru]

P-Channel 1.8-V (G-S) MOSFET

Conti

t (TJ = 150_C)

a

I

A

C/W

Si1305DL

Vishay Siliconix

PRODUCT SUMMARY

V

(V) r

DS

−8

DS(on)

0.280 @ VGS = −4.5 V

0.380 @ VGS = −2.5 V −0.79

0.530 @ VGS = −1.8 V −0.67

(W) I

D

−0.92

SOT-323

SC-70 (3-LEADS)

1

G

2

S

Top View

Ordering Information: Si1305DL--T1

Si1305DL--T1—E3 (Lead (Pb)-Free)

(A)

FEATURES

D TrenchFETr Power MOSFET: 1.8 V Rated

RoHS

COMPLIANT

3

D

Marking Code

LB XX

Part # Code

YY

Lot Traceability
and Date Code

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 5 secs Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

a

=

nuous Drain Curren

Pulsed Drain Current I

Continuous Diode Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

a

TA = 25_C

TA = 70_C

TA = 25_C

TA = 70_C

P

DM

I

DS

GS

D

S

D

stg

−0.92

−0.74 −0.69

−0.28 −0.24

0.34 0.29

0.22 0.19

−8

"8

−3

−55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

a

t v 5 sec

Steady State

R

thJA

thJF

315 375

360 430

285 340

V

−0.86

W

_C/W

Document Number: 71076
S-51075—Rev. D, 13-Jun-05

www.vishay.com

1

Si1305DL

DS(on)

VDD = −4 V, RL = 4 W

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

a

GS(th)

GSS

DSS

I

D(on)

VDS = VGS, I

= −250 mA −0.45 V

D

VDS = 0 V, VGS = "8 V "100 nA

VDS = −8 V, VGS = 0 V −1

VDS = −8 V, VGS = 0 V, TJ = 70_C −5

VDS = −5 V, VGS = −4.5 V −3 A

mA

VGS = −4.5 V, ID = −1 A 0.230 0.280

Drain-Source On-State Resistance

a

r

DS(on)

VGS = −2.5 V, ID = −0.5 A 0.315 0.380

W

VGS = −1.8 V, ID = −0.3 A 0.440 0.530

Forward Transconductance

Diode Forward Voltage

Dynamic

b

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain Reverse Recovery Time t

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

a

a

g

V

SD

d(on)

d(off)

rr

fs

VDS = −5 V, ID = −1 A

3.5 S

IS = −0.3 A, VGS = 0 V −1.2 V

g

V

gs

gd

= −4 V, VGS = −4.5 V, ID = −1 A 0.6 nC

DS

2.6 4

0.5

8 15

r

f

VDD = −4 V, RL = 4 W

ID ^ −1 A, V

= −4.5 V, Rg = 6 W

GEN

55 80

17 25

12 20

ns

IF = −1 A, di/dt = 100 A/ms 27 45

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

8

6

4

− Drain Current (A)I

D

2

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

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2

VDS − Drain-to-Source Voltage (V)

VGS = 4.5 V

4 V

3.5 V

3 V

2.5 V

2 V

1.5 V

1 V

6

5

TC = −55_C

25_C

4

3

2

− Drain Current (A)I

D

1

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VGS − Gate-to-Source Voltage (V)

Document Number: 71076

S-51075—Rev. D, 13-Jun-05

125_C

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Si1305DL

Vishay Siliconix

W )

− On-Resistance (r

DS(on)

On-Resistance vs. Drain Current

1.4

1.2

VGS = 1.8 V

1.0

0.8

0.6

0.4

0.2

0.0
01234567

− Drain Current (A)

I

D

VGS = 2.5 V

VGS = 4.5 V

Gate Charge

8

VDS = 4 V
I

= 1 A

D

6

350

300

250

200

150

C − Capacitance (pF)

100

50

0

02468

On-Resistance vs. Junction Temperature

1.6

VGS = 4.5 V
I

1.2

Capacitance

C

iss

C

oss

C

rss

VDS − Drain-to-Source Voltage (V)

= 1 A

D

4

− Gate-to-Source Voltage (V)

2

GS

V

0

01234

Qg − Total Gate Charge (nC)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

10

1

0.1

− Source Current (A)I

S

0.01

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 150_C

TJ = 25_C

VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)

0.8

− On-Resiistance
(Normalized)

DS(on)

r

0.4

0.0

−50 −25 0 25 50 75 100 125 150

1.0

0.8

W )

0.6

0.4

− On-Resistance (r

DS(on)

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

T

− Junction Temperature (_C)

J

ID = 1 A

Document Number: 71076
S-51075—Rev. D, 13-Jun-05

www.vishay.com

3

Si1305DL

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Threshold Voltage

0.4

0.3

ID = 250 mA

0.2

0.1

Variance (V)V

GS(th)

0.0

−0.1

−0.2

−50 −25 0 25 50 75 100 125 150

TJ − Temperature (_C)

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01
10

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

−4

10

Normalized Thermal Transient Impedance, Junction-to-Ambient

Single Pulse

−3

Single Pulse Power

20

16

12

TA = 25_C

8

Power (W)

4

0

−3

10

−2

10

−1

1 10 60010

10

Square Wave Pulse Duration (sec)

−1

−2

Time (sec)

Notes:

P

DM

t

1

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM − TA = PDMZ

4. Surface Mounted

t

1 100 6001010

2

t

1

t

2

= 360_C/W

thJA

(t)

thJA

100

2

1

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Foot

0.2

0.1

0.1

Thermal Impedance

Normalized Effective Transient

0.05

0.02

Single Pulse

0.01

−4

10

−3

10

−2

10

−1

11010

Square Wave Pulse Duration (sec)

Vishay Siliconix maintains worldwide manufacturing capability. Pr oducts may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see

http://www.vishay.com/ppg?71076.

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Document Number: 71076

S-51075—Rev. D, 13-Jun-05

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
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Revision: 08-Apr-05 1