P-Channel 1.8-V (G-S) MOSFET
Conti
t (TJ = 150_C)
a
I
A
C/W
Si1305DL
Vishay Siliconix
PRODUCT SUMMARY
V
(V) r
DS
−8
DS(on)
0.280 @ VGS = −4.5 V
0.380 @ VGS = −2.5 V −0.79
0.530 @ VGS = −1.8 V −0.67
(W) I
D
−0.92
SOT-323
SC-70 (3-LEADS)
1
G
2
S
Top View
Ordering Information: Si1305DL--T1
Si1305DL--T1—E3 (Lead (Pb)-Free)
(A)
FEATURES
D TrenchFETr Power MOSFET: 1.8 V Rated
RoHS
COMPLIANT
3
D
Marking Code
LB XX
Part # Code
YY
Lot Traceability
and Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage V
Gate-Source Voltage V
a
=
nuous Drain Curren
Pulsed Drain Current I
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
_
a
a
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
P
DM
I
DS
GS
D
S
D
stg
−0.92
−0.74 −0.69
−0.28 −0.24
0.34 0.29
0.22 0.19
−8
"8
−3
−55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
a
t v 5 sec
Steady State
R
thJA
thJF
315 375
360 430
285 340
V
−0.86
W
_C/W
Document Number: 71076
S-51075—Rev. D, 13-Jun-05
www.vishay.com
1
Si1305DL
DS(on)
VDD = −4 V, RL = 4 W
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
a
GS(th)
GSS
DSS
I
D(on)
VDS = VGS, I
= −250 mA −0.45 V
D
VDS = 0 V, VGS = "8 V "100 nA
VDS = −8 V, VGS = 0 V −1
VDS = −8 V, VGS = 0 V, TJ = 70_C −5
VDS = −5 V, VGS = −4.5 V −3 A
mA
VGS = −4.5 V, ID = −1 A 0.230 0.280
Drain-Source On-State Resistance
a
r
DS(on)
VGS = −2.5 V, ID = −0.5 A 0.315 0.380
W
VGS = −1.8 V, ID = −0.3 A 0.440 0.530
Forward Transconductance
Diode Forward Voltage
Dynamic
b
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Source-Drain Reverse Recovery Time t
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
a
a
g
V
SD
d(on)
d(off)
rr
fs
VDS = −5 V, ID = −1 A
3.5 S
IS = −0.3 A, VGS = 0 V −1.2 V
g
V
gs
gd
= −4 V, VGS = −4.5 V, ID = −1 A 0.6 nC
DS
2.6 4
0.5
8 15
r
f
VDD = −4 V, RL = 4 W
ID ^ −1 A, V
= −4.5 V, Rg = 6 W
GEN
55 80
17 25
12 20
ns
IF = −1 A, di/dt = 100 A/ms 27 45
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
8
6
4
− Drain Current (A)I
D
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
www.vishay.com
2
VDS − Drain-to-Source Voltage (V)
VGS = 4.5 V
4 V
3.5 V
3 V
2.5 V
2 V
1.5 V
1 V
6
5
TC = −55_C
25_C
4
3
2
− Drain Current (A)I
D
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS − Gate-to-Source Voltage (V)
Document Number: 71076
S-51075—Rev. D, 13-Jun-05
125_C