Vishay IRLD110, SiHLD110 Data Sheet
www.vishay.com
HVMDIP
D
S
G
IRLD110, SiHLD110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 100
()V
R
DS(on)
Q
(Max.) (nC) 6.1
g
Q
(nC) 2.6
gs
(nC) 3.3
Q
gd
Configuration Single
= 5.0 V 0.54
GS
G
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
•End Stackable
• Logic-Level Gate Drive
•R
D
• 175 °C Operating Temperature
Specified at VGS = 4 V and 5 V
DS(on)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
* Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
DESCRIPTION
S
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
ORDERING INFORMATION
Package HVMDIP
Lead (Pb)-free
SnPb
IRLD110PbF
SiHLD110-E3
IRLD110
SiHLD110
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 5.0 V
GS
A
= 100 °C 0.70
A
DS
± 10
GS
I
D
IDM 8.0
Linear Derating Factor 0.0083 W/°C
Single Pulse Avalanche Energy
Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
= 25 °C P
c
A
E
AS
I
AR
E
AR
D
dV/dt 5.5 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
= 25 V, starting TJ = 25 °C, L = 6.4 mH, Rg = 25 , IAS = 5.6 A (see fig. 12).
b. V
DD
c. I
5.6 A, dI/dt 75 A/μs, VDD VDS, TJ 175 °C.
SD
d. 1.6 mm from case.
S12-0617-Rev. D, 26-Mar-12
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
100
1.0
100 mJ
1.0 A
0.13 mJ
1.3 W
- 55 to + 175
d
Document Number: 91309
V
AT
°C
IRLD110, SiHLD110
D
S
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
- 120 °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
V
DS(on)
fs
V
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
iss
-80-
oss
-15-
rss
g
--2.6
gs
--3.3
gd
d(on)
r
-16-
d(off)
-17-
f
D
V
Between lead,
6 mm (0.25") from
package and center of
Internal Source Inductance L
S
die contact
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
VGS = 0 V, ID = 250 μA 100 - - V
VDS = VGS, ID = 250 μA 1.0 - 2.0 V
= ± 10 V - - ± 100 nA
GS
VDS = 100 V, VGS = 0 V - - 25
= 80 V, VGS = 0 V, TJ = 150 °C - - 250
V
DS
= 5.0 V ID = 0.60 A
GS
= 4.0 V ID = 0.50 A
GS
VDS = 50 V, ID = 0.60 A
b
b
b
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 5.6 A, VDS = 80 V,
I
= 5.0 V
GS
V
R
= 12 , RD = 8.4 , see fig. 10
g
TJ = 25 °C, IS = 1.0 A, VGS = 0 V
D
see fig. 6 and 13
= 50 V, ID = 5.6 A,
DD
b
b
D
G
S
b
b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Vishay Siliconix
- - 0.54
- - 0.76
1.3 - - S
- 250 -
--6.1
-9.3-
-4.7-
-4.0-
-6.0-
--1.0
--8.0
--2.5V
- 110 130 ns
- 0.50 0.65 μC
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
S12-0617-Rev. D, 26-Mar-12
2
Document Number: 91309
www.vishay.com
20 μs PULSE WIDTH
T
A
= 25 °C
20 μs PULSE WIDTH
T
A
= 175 °C
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRLD110, SiHLD110
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TA = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 175 °C
A
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
S12-0617-Rev. D, 26-Mar-12
3
For technical questions, contact: hvm@vishay.com
Document Number: 91309
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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