Vishay IRL620, SiHL620 Data Sheet
Power MOSFET
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
IRL620, SiHL620
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 200
(Ω)V
R
DS(on)
Q
(Max.) (nC) 16
g
Q
(nC) 2.7
gs
Q
(nC) 9.6
gd
Configuration Single
= 5.0 V 0.80
GS
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
•R
DS(on)
•Fast Switching
• Ease of paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
G
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
S
N-Channel MOSFET
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
SnPb
IRL620PbF
SiHL620-E3
IRL620
SiHL620
Specified at VGS = 4 V and 5 V
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current
Pulsed Drain Current
a
VGS at 5.0 V
TC = 25 °C
T
= 100 °C 3.3
C
DS
± 10
GS
I
D
IDM 21
Linear Derating Factor 0.40 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
a
= 25 °C P
c
C
E
AS
I
AR
E
AR
D
dV/dt 5.0 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting TJ = 25 °C, L = 6.9 mH, Rg = 25 Ω, IAS = 5.2 A (see fig. 12c).
DD
c. I
≤ 5.2 A, dV/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91301 www.vishay.com
S11-0519-Rev. C, 21-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
200
5.2
125 mJ
5.2 A
5.0 mJ
50 W
- 55 to + 150
d
10 lbf · in
1.1 N · m
www.vishay.com/doc?91000
V
A
°C
IRL620, SiHL620
D
S
G
S
D
G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.27 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
DS
GS(th)
V
GSS
DSS
R
DS(on)
fs
iss
-91-
oss
-27-
rss
g
--2.7
gs
--9.6
gd
d(on)
r
-18-
d(off)
-17-
f
D
S
S
I
SM
SD
rr
rr
on
V
V
V
V
R
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 5.2 A, dI/dt = 100 A/μs
-62
0.50 -
°C/WCase-to-Sink, Flat, Greased Surface R
-2.5
VGS = 0 V, ID = 250 μA 200 - - V
VDS = VGS, ID = 250 μA 1.0 - 2.0 V
= ± 10 - - ± 100 nA
GS
VDS = 200 V, VGS = 0 V - - 25
= 160 V, VGS = 0 V, TJ = 125 °C - - 250
DS
= 5.0 V ID = 3.1 A
GS
= 4.0 V ID = 2.6 A
GS
VDS = 50 V, ID = 3.1 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
b
b
b
--0.80
--1.0
1.2 - - S
- 360 -
--16
= 5.0 V
GS
ID = 5.2 A, VDS = 160 V,
see fig. 6 and 13
b
-4.2-
= 100 V, ID = 9.0 A,
V
DD
= 6.0 Ω, RD = 11 Ω, see fig. 10
g
b
-31-
-4.5-
-7.5-
--5.2
--21
TJ = 25 °C, IS = 5.2 A, VGS = 0 V
b
--1.8
- 180 270
b
-1.11.7
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
μA
Ω
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
V
ns
μC
www.vishay.com Document Number: 91301
2 S11-0519-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRL620, SiHL620
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91301 www.vishay.com
S11-0519-Rev. C, 21-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
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