Vishay IRL520L, SiHL520L Data Sheet
I2PAK (TO-262)
G
D
S
Power MOSFET
IRL520L, SiHL520L
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 100
R
()V
DS(on)
Q
(Max.) (nC) 12
g
Q
(nC) 3.0
gs
Q
(nC) 7.1
gd
Configuration Single
= 5 V 0.27
GS
D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
•R
• 175°C Operating Temperature
Specified at VGS = 4 V and 5 V
DS (on)
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
G
S
N-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
2
PAK (TO-262) is a through hole power package
The I
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package.
ORDERING INFORMATION
Package I2PAK (TO-262)
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SiHL520L-GE3
IRL520LPbF
SiHL520L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
= 25 °C
T
Continuous Drain Current V
Pulsed Drain Current
a
GS
at 5 V
C
= 100 °C 6.5
C
DS
± 10
GS
I
D
IDM 36
Linear Derating Factor 0.40
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
a
Repetiitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
e
b
a
= 25 °C P
c
C
E
AS
I
AR
E
AR
D
dV/dt 5.5 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting TJ = 25 °C, L = 3.0 mH, RG = 25 , IAS = 9.2 A (see fig. 12).
DD
c. I
9.2 A, dI/dt 110 A/μs, VDD VDS, TJ 175 °C.
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91467
S11-1060-Rev. A, 30-May-11 1
www.vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
100
9.2
0.025
170 mJ
9.2 A
6.0 mJ
60 W
- 55 to + 175
d
www.vishay.com/doc?91000
V
AT
W/°C
°C
D
S
G
IRL520L, SiHL520L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Dynamic
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
DS
GS(th)
V
GSS
DSS
DS(on)
fs
iss
- 150 -
oss
-30-
rss
g
--3.0
gs
--7.1
gd
d(on)
r
-21-
d(off)
-27-
f
D
V
V
GS
V
GS
V
GS
R
Between lead,
6 mm (0.25") from
package and center of
S
S
I
SM
SD
rr
rr
on
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs
-62
-2.5
°C/W
VGS = 0, ID = 250 μA 100 - - V
VDS = VGS, ID = 250 μA 1.0 - 2.0 V
= ± 10 V - - ± 100 nA
GS
VDS = 100 V, VGS = 0 V - - 25
= 80 V, VGS = 0 V, TJ = 150 °C - - 250
DS
= 5 V ID = 5.5 A
= 4 V ID = 4.6 A
VDS = 50 V, ID = 5.5 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 9.2 A, VDS = 80 V,
I
= 5 V
D
see fig. 6 and 13
b
b
b
- - 0.27
- - 0.38
3.2 - - S
- 490 -
--12
b
-9.8-
= 50 V, ID = 9.2 A,
V
DD
= 9 , RD = 5.2 , see fig. 10
G
b
-64-
-4.5-
-7.5-
G
TJ = 25 °C, IS = 9.2 A, VGS = 0 V
D
S
b
--9.2
--36
--2.5V
- 130 190 ns
b
- 0.83 1.0 μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
www.vishay.com Document Number: 91467
2 S11-1060-Rev. A, 30-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRL520L, SiHL520L
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91467 www.vishay.com
S11-1060-Rev. A, 30-May-11 3
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com/doc?91000
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