Vishay IRL510S, SiHL510S Data Sheet
N-Channel MOSFET
G
D
S
Power MOSFET
IRL510S, SiHL510S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 100
()V
R
DS(on)
Q
(Max.) (nC) 6.1
g
Q
(nC) 2.6
gs
Q
(nC) 3.3
gd
Configuration Single
= 5 V 0.54
GS
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
•R
• 175 °C Operating Temperature
Specified at VGS = 4 V and 5 V
DS(on)
• Compliant to RoHS Directive 2002/95/EC
D2PAK (TO-263)
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
2
The D
PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
D
G
S
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
2
D
PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free SiHL510S-GE3 SiHL510STRL-GE3
Lead (Pb)-free
Note
a. See device orientation.
2
PAK (TO-263) D2PAK (TO-263)
D
IRL510SPbF
SiHL510S-E3
IRL510STRLPbF
SiHL510STL-E3
a
a
a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
GS
at 5 V
C
= 100 °C
T
C
DS
± 10
GS
I
D
IDM 18
Linear Derating Factor 0.29
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
a
Repetiitive Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
e
b
a
= 25 °C
e
c
C
TA = 25 °C 3.7
E
AS
I
AR
E
AR
P
D
dV/dt 5.5 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting TJ = 25 °C, L = 4.8 mH, Rg = 25 , IAS = 5.6 A (see fig. 12).
DD
c. I
5.6 A, dI/dt 75 A/μs, VDD VDS, TJ 175 °C.
SD
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
100
5.6
4.0
0.025
100 mJ
5.6 A
4.3 mJ
43
- 55 to + 175
d
V
A
W/°C
W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90380
www.vishay.com
S11-1045-Rev. C, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRL510S, SiHL510S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain) R
thJA
R
thJA
thJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com Document Number: 90380
2 S11-1045-Rev. C, 30-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
DS
GS(th)
V
GSS
DSS
DS(on)
fs
iss
-80-
oss
-15-
rss
g
--2.6
gs
--3.3
gd
d(on)
r
-16-
d(off)
-18-
f
D
V
V
GS
V
GS
V
GS
R
Between lead,
6 mm (0.25") from
package and center of
S
S
I
SM
SD
rr
rr
on
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μs
This document is subject to change without notice.
-62
-40
°C/W
-3.5
VGS = 0, ID = 250 μA 100 - - V
VDS = VGS, ID = 250 μA 1.0 - 2.0 V
= ± 10 V - - ± 100 nA
GS
VDS = 100 V, VGS = 0 V - - 25
= 80 V, VGS = 0 V, TJ = 150 °C - - 250
DS
= 5 V ID = 3.4 A
= 4 V ID = 2.8 A
VDS = 50 V, ID = 3.4 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
b
b
b
- - 0.54
- - 0.76
1.9 - - S
- 250 -
--6.1
= 5.6 A, VDS = 80 V,
I
= 5 V
D
see fig. 6 and 13
b
-9.3-
V
= 50 V, ID = 5.6 A,
DD
= 12 , RD = 8.4 , see fig. 10
g
G
G
TJ = 25 °C, IS = 5.6 A, VGS = 0 V
b
D
S
D
S
b
-47-
-4.5-
-7.5-
--5.6
--18
--2.5V
- 110 130 ns
b
- 0.50 0.65 μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
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μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRL510S, SiHL510S
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 175 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 90380 www.vishay.com
S11-1045-Rev. C, 30-May-11 3
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com/doc?91000
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