TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
Power MOSFET
IRL510, SiHL510
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 100
(Ω)V
R
DS(on)
Q
(Max.) (nC) 6.1
g
Q
(nC) 2.6
gs
Q
(nC) 3.3
gd
Configuration Single
= 5.0 V 0.54
GS
D
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
•R
DS(on)
• 175 °C Operating Temperature
•Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
G
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
S
N-Channel MOSFET
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
SnPb
IRL510PbF
SiHL510-E3
IRL510
SiHL510
Specified at VGS = 4 V and 5 V
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
GS
at 5 V
C
T
= 100 °C 4.0
C
DS
± 10
GS
I
D
IDM 18
Linear Derating Factor 0.29 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
a
= 25 °C P
c
C
E
AS
I
AR
E
AR
D
dV/dt 5.5 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting TJ = 25 °C, L = 4.8 mH, Rg = 25 Ω, IAS = 5.6 A (see fig. 12).
DD
c. I
≤ 5.6 A, dI/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91297 www.vishay.com
S11-0518-Rev. B, 21-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
100
5.6
100 mJ
5.6 A
4.3 mJ
43 W
- 55 to + 175
d
10 lbf · in
1.1 N · m
www.vishay.com/doc?91000
V
A
°C
IRL510, SiHL510
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
thJA
R
thCS
R
thJC
-62
0.50 -
-3.5
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
ΔV
DS/TJ
GS(th)
V
GSS
DSS
V
DS(on)
fs
V
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
iss
-80-
oss
-15-
rss
g
--2.6
gs
--3.3
gd
d(on)
r
-16-
d(off)
-18-
f
D
V
Between lead,
6 mm (0.25") from
package and center of
Internal Source Inductance L
S
die contact
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
VGS = 0 V, ID = 250 μA 100 - - V
Reference to 25 °C, I
= 1 mA
D
-0.12-
VDS = VGS, ID = 250 μA 1.0 - 2.0 V
= ± 10 V - - ± 100 nA
GS
VDS = 100 V, VGS = 0 V - - 25
V
= 80 V, VGS = 0 V, TJ = 150 °C - - 250
DS
= 5.0 V ID = 3.4 A
GS
= 4.0 V ID = 2.8 A
GS
VDS = 50 V, ID = 3.4 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
b
b
b
- - 0.54
- - 0.76
1.9 - - S
-250-
--6.1
= 5.6 A, VDS = 80 V
I
= 5.0 V
GS
D
see fig. 6 and 13
b
-9.3-
= 50 V, ID = 5.6 A
V
DD
R
= 12 Ω, RD= 8.4 Ω
g
see fig. 10
b
G
G
TJ = 25 °C, IS = 5.6 A, VGS = 0 V
TJ = 25 °C, IF = 5.6 A,
dI/dt = 100 A/μs
b
D
S
D
S
b
-47-
-4.5-
-7.5-
--5.6
--18
--2.5V
- 110 130 ns
- 0.50 0.65 μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
V/°C
μA
Ω
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
www.vishay.com Document Number: 91297
2 S11-0518-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRL510, SiHL510
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Vishay Siliconix
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T
Document Number: 91297 www.vishay.com
S11-0518-Rev. B, 21-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
= 175 °C
C
This datasheet is subject to change without notice.
Fig. 4 - Normalized On-Resistance vs. Temperature
www.vishay.com/doc?91000
IRL510, SiHL510
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com Document Number: 91297
4 S11-0518-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 8 - Maximum Safe Operating Area
www.vishay.com/doc?91000
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
IRL510, SiHL510
Fig. 9 - Maximum Drain Current vs. Case Temperature
V
DS
V
GS
R
G
5.0 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Vishay Siliconix
R
D
D.U.T.
+
V
-
DD
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91297 www.vishay.com
S11-0518-Rev. B, 21-Mar-11 5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRL510, SiHL510
R
G
I
AS
0.01 Ω
t
p
D.U.T.
L
V
DS
+
-
V
DD
5.0 V
Var y t
p
to obtain
required I
AS
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
V
DS
t
p
V
DS
I
AS
V
DD
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Q
5.0 V
V
Q
GS
G
G
Q
GD
Charge
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
www.vishay.com Document Number: 91297
6 S11-0518-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
IRL510, SiHL510
+
-
R
g
D.U.T.
Peak Diode Recovery dV/dt Test Circuit
+
-
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
• dV/dt controlled by R
• Driver same type as D.U.T.
•
I
controlled by duty factor “D”
SD
• D.U.T. - device under test
g
+
Vishay Siliconix
+
V
DD
-
Reverse
recovery
current
Re-applied
voltage
Driver gate drive
P.W.
D.U.T. l
D.U.T. V
Inductor current
Note
a. V
waveform
SD
waveform
DS
Body diode forward drop
Ripple ≤ 5 %
= 5 V for logic level devices
GS
Fig. 14 - For N-Channel
Period
Body diode forward
current
Diode recovery
dV/dt
dI/dt
D =
P.W.
Period
V
GS
V
DD
I
SD
= 10 Va
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91297
.
Document Number: 91297 www.vishay.com
S11-0518-Rev. B, 21-Mar-11 7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
www.vishay.com
M
*
3
2
1
L
L(1)
D
H(1)
Q
Ø P
A
F
J(1)
b(1)
e(1)
e
E
b
C
Package Information
Vishay Siliconix
TO-220-1
DIM.
A 4.24 4.65 0.167 0.183
b 0.69 1.02 0.027 0.040
b(1) 1.14 1.78 0.045 0.070
c 0.36 0.61 0.014 0.024
D 14.33 15.85 0.564 0.624
E 9.96 10.52 0.392 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.10 6.71 0.240 0.264
J(1) 2.41 2.92 0.095 0.115
L 13.36 14.40 0.526 0.567
L(1) 3.33 4.04 0.131 0.159
Ø P 3.53 3.94 0.139 0.155
Q 2.54 3.00 0.100 0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
MILLIMETERS INCHES
MIN. MAX. MIN. MAX.
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 14-Dec-15
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ASE Xi’an
For technical questions, contact: hvm@vishay.com
Package Picture
1
Document Number: 66542
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
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statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Revision: 13-Jun-16
1
Document Number: 91000
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