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PD- 9.1694A
PRELIMINARY
IRL3102
HEXFET® Power MOSFET
l Advanced Process Technology
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
G
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 61
ID @ TC = 100°C Continuous Drain Current, VGS @ 4.5V 39 A
I
DM
PD @TC = 25°C Power Dissipation 89 W
V
GS
V
GSM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 240
Linear Derating Factor 0.71 W/°C
Gate-to-Source Voltage ± 10 V
Gate-to-Source Voltage 14 V
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy 220 mJ
Avalanche Current 35 A
Repetitive Avalanche Energy 8.9 mJ
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 1.4
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
D
S
TO-220AB
R
DS(on)
V
= 20V
DSS
= 0.013Ω
ID = 61A
°C
11/18/97
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IRL3102
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.016 –– – V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.015 VGS = 4.5V, ID = 37A
––– ––– 0.013
Ω
VGS = 7.0V, ID = 37A
Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 36 ––– ––– S VDS = 16V, ID = 35A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 10V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V
VDS = 20V, VGS = 0V
µA
VGS = 10V
nA
Total Gate Charge ––– ––– 58 ID = 35A
Gate-to-Source Charge ––– ––– 14 nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– – –– 21 VGS = 4.5V, See Fig. 6
Turn-On Delay Time ––– 10 ––– VDD = 10V
Rise Time ––– 130 –––
Turn-Off Delay Time ––– 80 – –– RG = 9.0Ω, VGS = 4.5V
ns
ID = 35A
Fall Time ––– 110 ––– RD = 0.28Ω,
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 2500 ––– VGS = 0V
Output Capacitance ––– 1000 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 360 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 37A, VGS = 0V
Reverse Recovery Time ––– 59 88 n s TJ = 25°C, IF = 35A
Reverse Recovery Charge ––– 110 160 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ 35A, di/dt ≤ 100A/µs, V
SD
TJ ≤ 150°C
= 25°C, L = 0.36mH
J
= 35A.
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
61
240
showing the
A
p-n junction diode.
≤ V
DD
(BR)DSS
D
G
S
,
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IRL3102
1000
VGS
VGS
TOP
15V
TOP 10V
12V
8.0V
10V
6.0V
8.0V
4.0V
6.0V
3.0V
4.0V
3.0V
BOTTOM 2.5V
BOTTOM
2.5V
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
1000
2.5V
20µs PULSE WIDTH
T = 25 C
J
°
1000
VGS
VGS
TOP
15V
TOP 10V
12V
8.0V
10V
6.0V
8.0V
4.0V
6.0V
4.0V
3.0V
3.0V
BOTTOM 2.5V
BOTTOM
2.5V
100
2.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 150 C
10
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I =
D
61A
°
T = 25 C
J
100
10
D
I , Drain-to-Source Current (A)
1
2 3 4 5 6 7
V , Gate-to-Source Voltage (V)
GS
°
T = 150 C
J
V = 15V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V =
GS
°
4.5V
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IRL3102
4200
3600
3000
2400
1800
C, Capacitance (pF)
1200
600
0
1 10 100
V
=
0V,
iss
rss
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
C
oss
C
V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
15
I =
35A
D
V = 16V
12
9
6
3
GS
V , Gate-to-Source Voltage (V)
0
0 20 40 60 80 100
Q , Total Gate Charge (nC)
G
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
°
T = 150 C
J
°
T = 25 C
SD
J
V = 0 V
GS
10
SD
I , Reverse Drain Current (A)
1
0.2 0.8 1.4 2.0 2.6
V ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
10
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
1
1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
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IRL3102
70
60
50
40
30
D
20
I , Drain Current (A)
10
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
500
TOP
400
300
200
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature( C)
J
BOTTOM
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
I
D
16A
22A
35A
°
thJC
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
Thermal Response (Z )
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Page 6
IRL3102
0.015
0.020
( Ω )
Drain-to-Source On Resistance ( Ω )
DS(on),
R
0.018
0.016
0.014
I = 61A
0.012
0.010
0.008
0246810
V , Gate-to-Source V oltage (V)
GS
D
0.014
VGS = 4.5V
0.013
0.012
0.011
VGS = 7.0V
DS (on)
0.010
R , Drain-to-Source On Resistance
0 20 40 60 80
I , Drain Current (A)
D
Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage
A
Page 7
A
Package Outline
A
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.54 (.415)
10.29 (.405)
1 2 3
4
6.47 (.255)
6.10 (.240)
1.15 (.045)
MIN
4.06 (.160)
3.55 (.140)
3.78 (.149)
3.54 (.139)
- A -
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
IRL3102
LEAD ASSIGNMENTS
1 - G A T E
2 - D R AIN
3 - SOURCE
4 - D R AIN
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CO N T R O L L ING D IM EN S IO N : IN C H 4 H E ATS IN K & LE A D M EA S UR E ME N TS D O NO T INCLUDE BURRS.
2X
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY
WITH ASSEMBLY
LOT CODE 9B1M
LO T C O D E 9 B 1 M
0.93 (.037)
3X
0.69 (.027)
0.36 (.014) M B A M
INT ERN AT ION AL
INTERNATIONAL
R E C T IF IE R
RECTIFIER
LOGO
LO GO
AS SEMBLY
ASSEMBLY
LOT C ODE
LO T C ODE
IRF1010
IRF1010
9246
9B 1M
9B 1M
0.55 (.022)
3X
0.46 (.018)
2.92 (.115)
2.64 (.104)
9246
PART NUMBER
PART NUMBER
DATE CODE
DATE CODE
(YYW W)
(YYW W)
YY = YEAR
YY = YE AR
WW = WEEK
WW = WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 11/97
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