Vishay IRK.41 SERIES, IRK.56 SERIES Data Sheet
Bulletin I27131 rev. G 10/02
IRK.41, .56 SERIES
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500V
isolating voltage
RMS
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
ADD-A-pakTM GEN V Power Modules
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
45 A
60 A
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters IRK.41 IRK.56 Units
I
or I
T(AV)
F(AV)
@ 85°C
I
(*) 100 135 A
O(RMS)
I
@ 50Hz 850 1310 A
TSM
I
@ 60Hz 890 1370 A
FSM
I2t @ 50Hz 3.61 8.50 KA2s
@ 60Hz 3.30 7.82 KA2s
I2√t 36.1 85.0 KA2√s
V
range 400 to 1600 V
RRM
T
STG
T
J
(*) As AC switch.
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45 60 A
- 40 to 125
- 40 to125
o
C
o
C
1
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
V
, maximum V
RRM
Type number
Voltage repetitive non-repetitive peak off-state voltage, I
Code peak reverse voltage peak reverse voltage gate open circuit 125°C
-V V VmA
04 400 500 400
06 600 700 600
08 800 900 800
IRK.41/ .56 10 1000 1100 1000 15
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
On-state Conduction
Parameters IRK.41 IRK.56 Units Conditions
I
Max. average on-state
T(AV)
current (Thyristors) 45 60 180
I
Maximum average 45 60 T
F(AV)
forward current (Diodes)
I
Max. continuous RMS
O(RMS
)
on-state current.
As AC switch
I
Max. peak, one cycle 850 1310 t=10ms No voltage
TSM
or non-repetitive on-state 890 1370 t=8.3ms reapplied
I
or forward current 715 1100 t=10ms 100% V
FSM
2
I
t Max. I2t for fusing 3.61 8.56 t=10ms No voltage
2
√t Max. I2√t for fusing (1) 36.1 85.6 KA2√s t=0.1 to 10ms, no voltage reapplied
I
Max. value of threshold 0.88 0.85 Low level (3)
V
T(TO)
voltage (2) 0.91 0.88 High level (4)
r
Max. value of on-state 5.90 3.53 Low level (3)
t
slope resistance (2) 5.74 3.41 High level (4)
V
Max. peak on-state or I
TM
VFMforward voltage I
di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 V
of rise of turned on I
current t
IHMax. holding current 200
Max. latching current 400 TJ = 25oC, anode supply = 6V,resistive load
I
L
(1) I2t for time t
(4) I > π x I
AV
= I2√t
x √tx(2) Average power = V
x
100 135
750 1150 t=8.3ms reapplied
940 1450 t=10ms T
985 1520 t=8.3ms no voltage reapplied
3.30 7.82 t=8.3ms reapplied
2.56 6.05 t=10ms 100% V
2.33 5.53 t=8.3ms reapplied
4.42 10.05 t=10ms T
4.03 9.60 t=8.3ms no voltage reapplied
1.81 1.54 V
150 A/µs
x I
T(TO)
T(AV)
2
, maximum V
RSM
A
KA2s
V
mΩ
mA
+ r
x (I
t
T(RMS)
, max. repetitive I
DRM
o
conduction, half sine wave,
= 85oC
C
or
I
(RMS)
Sinusoidal
half wave,
RRM
Initial T
= 25oC,
J
Initial T
RRM
= 25oC,
J
TJ = TJ max
= TJ max
T
J
= π x I
TM
T(AV)
= π x I
FM
F(AV)
=π x I
T(AV)
, I
g
TM
< 0.5 µs, tp > 6 µs
r
T
= 25oC, anode supply = 6V,
J
DRM
= 500mA,
TJ = 25°C
,
resistive load, gate open circuit
2
)
(3) 16.7% x π x I
< I < π x I
AV
RRM
DRM
I
(RMS)
= TJ max.
J
= TJ max.
J
AV
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IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
Triggering
Parameters IRK.41 IRK.56 Units Conditions
PGMMax. peak gate power 10 10
P
Max. average gate power 2.5 2.5
G(AV)
I
Max. peak gate current 2.5 2.5 A
GM
-V
Max. peak negative
GM
gate voltage
Max. gate voltage
V
GT
required to trigger
Max. gate current
I
GT
required to trigger
VGDMax. gate voltage
that will not trigger
I
Max. gate current
GD
that will not trigger
10
4.0 T
2.5 T
1.7 T
270 T
150 mA TJ = 25°C
80 T
0.25 V
6mA
Blocking
Parameters IRK.41 IRK.56 Units Conditions
I
Max. peak reverse and
RRM
I
off-state leakage current
DRM
at V
, V
RRM
DRM
V
RMS isolation voltage V
INS
dv/dt Max. critical rate of rise T
of off-state voltage (5) gate open circuit
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT41/16AS90.
15 mA T
2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
500 V/µs
Thermal and Mechanical Specifications
Parameters IRK.41 IRK.56 Units Conditions
TJJunction operating
temperature range
Storage temp. range - 40 to 125
T
stg
Max. internal thermal
R
thJC
resistance, junction 0.23 0.20 Per module, DC operation
to case
Typical thermal resistance
R
thCS
case to heatsink
T Mounting torque ± 10%
to heatsink 5
busbar 3
wt Approximate weight 110 (4) gr (oz)
Case style TO-240AA JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
Devices Units
180
Sine half wave conduction Rect. wave conduction
o
120
o
IRK.41 0.11 0.13 0.17 0.23 0.34 0.09 0.14 0.18 0.23 0.34
IRK.56 0.09 0.11 0.13 0.18 0.27 0.07 0.11 0.14 0.19 0.28
- 40 to 125
0.1
when devices operate at different conduction angles than DC)
thJC
o
90
o
60
o
30
W
V
°C
K/W
Nm
180o120
= - 40°C
J
= 25°C
J
= 125°C
J
= - 40°C
J
= 125°C
J
T
= 125oC,
J
rated V
= 125oC,
T
J
rated V
= 125 oC, gate open circuit
J
= 125oC, linear to 0.67 V
J
DRM
DRM
applied
applied
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
DRM
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound
o
o
90
o
60
o
30
,
°C/W
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