Vishay IRFZ24S, SiHFZ24S Data Sheet

IRFZ24S, SiHFZ24S

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)

60

RDS(on) ( )

VGS = 10 V

0.10

Qg max. (nC)

25

Qgs (nC)

5.8

Qgd (nC)

11

Configuration

Single

D

D2PAK (TO-263)

G

G

D

S

S

N-Channel MOSFET

FEATURES
• Advanced process technology
• Surface mount (IRFZ24S, SiHFZ24S)
• 175 °C operating temperature	Available
• Fast switching
• Material categorization:	Available
for definitions of compliance please	see
www.vishay.com/doc?99912

Note

*This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the last lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

ORDERING INFORMATION

	Package	D2PAK (TO-263)	D2PAK (TO-263)
	Lead (Pb)-free and Halogen-free	SiHFZ24S-GE3	SiHFZ24STRR-GE3
	Lead (Pb)-free	IRFZ24SPbF	IRFZ24STRRPbF
		-	IRFZ24STRLPbF

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	60	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	17
			TC = 100 °C		12	A
Pulsed Drain Current a, e				IDM	68
Linear Derating Factor					0.40	W/°C
Single Pulse Avalanche Energy b, e				EAS	100	mJ
Maximum Power Dissipation		TC = 25 °C		PD	60	W
		TA = 25 °C			3.7
Peak Diode Recovery dV/dt c, e				dV/dt	4.5	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	-55 to +175	°C
Soldering Recommendations (Peak temperature) d		for 10 s			300

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 25 V, starting TJ = 25 °C, L = 400 μH, Rg = 25 , IAS = 17 A (see fig. 12).

c.ISD 17 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C.

d.1.6 mm from case.

e.Uses IRFZ24, SiHFZ24 data and test conditions.

S16-0013-Rev. D, 18-Jan-16	1	Document Number: 90366
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFZ24S, SiHFZ24S

www.vishay.com				Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	40
(PCB mounted, steady-state) a				°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	2.5

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS								MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0, ID = 250 μA								60	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA c								-	0.061	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA								2.0	-	4.0	V
Gate-Source Leakage		IGSS	VGS = ± 20 V								-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 60 V, VGS = 0 V								-	-	25	μA
			VDS = 48 V, VGS = 0 V, TJ = 150 °C								-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V		ID = 10 A b						-	-	0.10
Forward Transconductance		gfs	VDS = 25 V, ID = 10 A d								5.5	-	-	S
Dynamic
Input Capacitance		Ciss		VGS = 0 V,							-	640	-
Output Capacitance		Coss		VDS = 25 V,							-	360	-	pF
			f = 1.0 MHz, see fig. 5 d
Reverse Transfer Capacitance		Crss									-	79	-
Total Gate Charge		Qg			ID = 17 A, VDS = 48 V,						-	-	25
Gate-Source Charge		Qgs	VGS = 10 V								-	-	5.8	nC
					see fig. 6 and 13 b, c
Gate-Drain Charge		Qgd									-	-	11
Turn-On Delay Time		td(on)									-	13	-
Rise Time		tr	VDD = 30 V, ID = 17 A,								-	58	-	ns
Turn-Off Delay Time		td(off)	Rg = 18 , RD = 1.7 , see fig. 10 b, c								-	25	-
Fall Time		tf									-	42	-
Internal Source Inductance		LS	Between lead, and center of die contact								-	7.5	-	nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol							D	-	-	17
			showing the
Pulsed Diode Forward Current a		I	integral reverse		G						-	-	68	A
			p - n junction diode
		SM								S
Body Diode Voltage		VSD	TJ = 25 °C, IS = 17 A, VGS = 0 V b								-	-	1.5	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs b, c								-	88	180	ns
Body Diode Reverse Recovery Charge		Qrr									-	0.29	0.64	nC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

c.Uses IRFZ24/SiHFZ24 data and test conditions.

S16-0013-Rev. D, 18-Jan-16	2	Document Number: 90366
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFZ24S, SiHFZ24S

www.vishay.com	Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C		Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 175 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

S16-0013-Rev. D, 18-Jan-16	3	Document Number: 90366
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000