Vishay IRFZ24S, SiHFZ24S Data Sheet

www.vishay.com

N-Channel MOSFET

G

D

S

Available

Available

IRFZ24S, SiHFZ24S

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 60

R

()V

DS(on)

Q

max. (nC) 25

g

Q

(nC) 5.8

gs

Q

(nC) 11

gd

Configuration Single

= 10 V 0.10

GS

FEATURES

• Advanced process technology

• Surface mount (IRFZ24S, SiHFZ24S)

• 175 °C operating temperature

• Fast switching

• Material categorization: 
for definitions of compliance please see

www.vishay.com/doc?99912

Note

*

Thi s datasheet pro vi des information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.

D2PAK (TO-263)

Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that

D

G

S

power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the
highest power capability and the last lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263)

Lead (Pb)-free and Halogen-free SiHFZ24S-GE3 SiHFZ24STRR-GE3

Lead (Pb)-free

IRFZ24SPbF IRFZ24STRRPbF

- IRFZ24STRLPbF

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a, e

at 10 V

GS

C

= 100 °C 12

C

DS

± 20

GS

I

D

IDM 68

Linear Derating Factor 0.40 W/°C

c, e

b, e

E

AS

T

= 25 °C

C

= 25 °C 3.7

T

A

P

D

dV/dt 4.5 V/ns

, T

J

d

for 10 s 300

stg

Single Pulse Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak temperature)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 25 V, starting TJ = 25 °C, L = 400 μH, Rg = 25 , IAS = 17 A (see fig. 12).

DD

c. I

 17 A, dI/dt  140 A/μs, VDD  VDS, TJ  175 °C.

SD

d. 1.6 mm from case.
e. Uses IRFZ24, SiHFZ24 data and test conditions.

S16-0013-Rev. D, 18-Jan-16

1

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

60

17

100 mJ

60

-55 to +175

Document Number: 90366





V

AT

W

°C

IRFZ24S, SiHFZ24S

S

D

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient 
(PCB mounted, steady-state)

a

Maximum Junction-to-Case (Drain) R

R

thJA

thJC

-40

-2.5

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 10 A

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Source Inductance L

iss

- 360 -

oss

-79-

rss

g

--5.8

gs

--11

gd

d(on)

r

-25-

d(off)

-42-

f

S

V

Between lead, and center of die contact - 7.5 - nH

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the 
integral reverse
p - n junction diode

TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Uses IRFZ24/SiHFZ24 data and test conditions.

VGS = 0, ID = 250 μA 60 - - V

c

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 60 V, VGS = 0 V - - 25

= 48 V, VGS = 0 V, TJ = 150 °C - - 250

V

DS

VDS = 25 V, ID = 10 A

b

d

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

= 17 A, VDS = 48 V,

I

= 10 V

GS

V

R

= 18 , RD = 1.7 , see fig. 10

g

D

see fig. 6 and 13

= 30 V, ID = 17 A,

DD

TJ = 25 °C, IS = 17 A, VGS = 0 V

d

b, c

b, c

b

b, c

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Vishay Siliconix

°C/W

-0.061-V/°C

- - 0.10 

5.5 - - S

- 640 -

--25

-13-

-58-

--17

--68

--1.5V

- 88 180 ns

-0.290.64nC

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

A

S16-0013-Rev. D, 18-Jan-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

2

Document Number: 90366

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRFZ24S, SiHFZ24S

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 175 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

S16-0013-Rev. D, 18-Jan-16

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

3

Document Number: 90366

www.vishay.com

IRFZ24S, SiHFZ24S

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

S16-0013-Rev. D, 18-Jan-16

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

4

Document Number: 90366

www.vishay.com

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

R

D

V

GS

R

g

D.U.T.

10 V

+

-

V

DS

V

DD

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

R

g

I

AS

0.01 W

t

p

D.U.T.

L

V

DS

+

-

V

DD

10 V

Var y t

p

to obtain

required I

AS

IRFZ24S, SiHFZ24S

Vishay Siliconix

Fig. 10a - Switching Time Test Circuit

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 10b - Switching Time Waveforms

V

DS

t

p

V

DD

Fig. 12a - Unclamped Inductive Test Circuit

S16-0013-Rev. D, 18-Jan-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

V

DS

I

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

5

For technical questions, contact: [e-mail]

AS

Fig. 12b - Unclamped Inductive Waveforms

Document Number: 90366

www.vishay.com

Q

GS

Q

GD

Q

G

V

G

Charge

10 V

IRFZ24S, SiHFZ24S

Vishay Siliconix

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator

Same type as D.U.T.

50 kΩ

0.2 µF

12 V

V

GS

0.3 µF

D.U.T.

3 mA

I

G

Current sampling resistors

I

D

+

-

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

V

DS

S16-0013-Rev. D, 18-Jan-16

6

Document Number: 90366

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple ≤ 5 %

Body diode forward drop

Re-applied
voltage

Reverse
recovery
current

Body diode forward

current

V

GS

= 10 Va

I

SD

Driver gate drive

D.U.T. l

SD

waveform

D.U.T. V

DS

waveform

Inductor current

D =

P.W.

Period

+

-

+

+

+

-

-

-

Peak Diode Recovery dV/dt Test Circuit

V

DD

• dV/dt controlled by R

g

• Driver same type as D.U.T.

•

I

SD

controlled by duty factor “D”

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

R

g

Note

a. V

GS

= 5 V for logic level devices

V

DD

IRFZ24S, SiHFZ24S

Vishay Siliconix

Fig. 14 - For N-Channel












Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90366

S16-0013-Rev. D, 18-Jan-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

.

7

For technical questions, contact: [e-mail]

Document Number: 90366

Package Information

M

*

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

D2

www.vishay.com

Vishay Siliconix

TO-220AB

MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX.

A 4.25 4.65 0.167 0.183

b 0.69 1.01 0.027 0.040

b(1) 1.20 1.73 0.047 0.068

c 0.36 0.61 0.014 0.024

D 14.85 15.49 0.585 0.610

D2 12.19 12.70 0.480 0.500

E 10.04 10.51 0.395 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.09 6.48 0.240 0.255

J(1) 2.41 2.92 0.095 0.115

L 13.35 14.02 0.526 0.552

L(1) 3.32 3.82 0.131 0.150

Ø P 3.54 3.94 0.139 0.155

Q 2.60 3.00 0.102 0.118

ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471

Note

* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM

Revison: 16-Jun-14

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1

Document Number: 71195

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer



ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Revision: 13-Jun-16

1

Document Number: 91000