Vishay IRFZ24S, IRFZ24L, SiHFZ24S Data Sheet
N-Channel MOSFET
G
D
S
D2PAK (TO-263)
G
D
S
I2PAK (TO-262)
G
D
S
IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 60
()V
R
DS(on)
Q
(Max.) (nC) 25
g
Q
(nC) 5.8
gs
Q
(nC) 11
gd
Configuration Single
= 10 V 0.10
GS
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Advanced Process Technology
• Surface Mount (IRFZ24S, SiHFZ24S)
• Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L)
• 175 °C Operating Temperature
•Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the highest
power capability and the last lowest possible on-resistance
in any existing surface mount package. The D
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application. The through-hole
version (IRFZ24L, SiHFZ24L) is available for low-profile
applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free SiHFZ24S-GE3 SiHFZ24STRR-GE3 -
Lead (Pb)-free
Note
a. See device orientation.
2
D
PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)
IRFZ24SPbF - IRFZ24LPbF
SiHFZ24S-E3 - SiHFZ24L-E3
2
PAK is
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
Linear Derating Factor 0.40 W/°C
Single Pulse Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting TJ = 25 °C, L = 400 μH, Rg = 25 , IAS = 17 A (see fig. 12).
DD
17 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C.
c. I
SD
d. 1.6 mm from case.
e. Uses IRFZ24, SiHFZ24 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90366
S11-1063-Rev. C, 30-May-11 1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
a, e
b, e
c, e
This document is subject to change without notice.
at 10 V
GS
C
= 100 °C 12
T
C
T
= 25 °C
C
= 25 °C 3.7
T
A
www.vishay.com
DS
± 20
GS
I
D
IDM 68
E
AS
P
D
dV/dt 4.5 V/ns
, T
J
stg
60
17
100 mJ
60
- 55 to + 175
d
www.vishay.com/doc?91000
V
A
W
°C
IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient
(PCB Mounted, Steady-State)
a
Maximum Junction-to-Case (Drain) R
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Uses IRFZ24/SiHFZ24 data and test conditions.
a
R
thJA
thJC
DS
GS(th)
V
GSS
-40
°C/W
-2.5
VGS = 0, ID = 250 μA 60 - - V
c
- 0.061 - V/°C
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 60 V, VGS = 0 V - - 25
DSS
VGS = 10 V ID = 10 A
DS(on)
fs
iss
- 360 -
oss
-79-
rss
g
--5.8
gs
--11
gd
d(on)
r
-25-
d(off)
-42-
f
S
S
I
SM
SD
rr
rr
on
V
= 48 V, VGS = 0 V, TJ = 150 °C - - 250
DS
VDS = 25 V, ID = 10 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
b
d
d
- - 0.10
5.5 - - S
- 640 -
--25
= 17 A, VDS = 48 V,
I
V
GS
= 10 V
D
see fig. 6 and 13
b, c
-13-
V
= 30 V, ID = 17 A,
R
DD
= 18 , RD = 1.7 , see fig. 10
g
b, c
-58-
Between lead, and center of die contact - 7.5 - nH
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IS = 17 A, VGS = 0 V
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs
D
G
S
b
b, c
--17
--68
--1.5V
- 88 180 ns
- 290 640 μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
A
www.vishay.com Document Number: 90366
2 S11-1063-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 175 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 90366 www.vishay.com
S11-1063-Rev. C, 30-May-11 3
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com/doc?91000
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