Vishay IRFZ24, SiHFZ24 Data Sheet

IRFZ24, SiHFZ24

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)		60
RDS(on) ( )	VGS = 10 V		0.10
Qg max. (nC)		25
Qgs (nC)		5.8
Qgd (nC)		11
Configuration		Single

D

TO-220AB

G

S S

D

G

N-Channel MOSFET

FEATURES

• Dynamic dV/dt rating

• 175 °C operating temperature

• Fast switching

•Ease of paralleling

•Simple drive requirements

•Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION

Package	TO-220AB
Lead (Pb)-free	IRFZ24PbF

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	60	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	17
			TC = 100 °C		12	A
Pulsed Drain Current a				IDM	68
Linear Derating Factor					0.40	W/°C
Single Pulse Avalanche Energy b				EAS	100	mJ
Maximum Power Dissipation		TC = 25 °C		PD	60	W
Peak Diode Recovery dV/dt c				dV/dt	4.5	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	-55 to +175	°C
Soldering Recommendations (Peak temperature) d		for 10 s			300
Mounting Torque		6-32 or M3 screw			10	lbf · in
					1.1	N · m

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 25 V, starting TJ = 25 °C, L = 403 μH, Rg = 25 , IAS = 17 A (see fig. 12).

c.ISD 17 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C.

d.1.6 mm from case.

S16-0013-Rev. C, 18-Jan-16	1	Document Number: 91406
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

						IRFZ24, SiHFZ24
		www.vishay.com				Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER			SYMBOL	TYP.	MAX.		UNIT
Maximum Junction-to-Ambient			RthJA	-	62
Case-to-Sink, Flat, Greased Surface			RthCS	0.50	-		°C/W
Maximum Junction-to-Case (Drain)			RthJC	-	2.5

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS									MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA									60	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA									-	0.061	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA									2.0	-	4.0	V
Gate-Source Leakage		IGSS		VGS = ± 20 V								-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 60 V, VGS = 0 V									-	-	25	μA
			VDS = 48 V, VGS = 0 V, TJ = 150 °C									-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V			ID = 10 A b						-	-	0.10
Forward Transconductance		gfs	VDS = 25 V, ID = 10 A									5.5	-	-	S
Dynamic
Input Capacitance		Ciss			VGS = 0 V,							-	640	-
Output Capacitance		Coss			VDS = 25 V,							-	360	-	pF
			f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance		Crss										-	79	-
Total Gate Charge		Qg										-	-	25
					ID = 17 A, VDS = 48 V,
Gate-Source Charge		Qgs	VGS = 10 V									-	-	5.8	nC
					see fig. 6 and 13 b
Gate-Drain Charge		Qgd										-	-	11
Turn-On Delay Time		td(on)										-	13	-
Rise Time		tr	VDD = 30 V, ID = 17 A,									-	58	-	ns
Turn-Off Delay Time		td(off)	Rg = 18 , RD = 1.7 , see fig. 10 b									-	25	-
Fall Time		tf										-	42	-
Internal Drain Inductance		LD	Between lead,							D		-	4.5	-
			6 mm (0.25") from
			package and center of			G									nH
Internal Source Inductance		LS	die contact							S		-	7.5	-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol								D	-	-	17
			showing the												A
Pulsed Diode Forward Current a		ISM	integral reverse			G						-	-	68
			p - n junction diode								S
Body Diode Voltage		VSD	TJ = 25 °C, IS = 17 A, VGS = 0 V b									-	-	1.5	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 17 A, dI/dt = 100 A/ s									-	88	180	ns
Body Diode Reverse Recovery Charge		Qrr										-	0.29	0.64	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

S16-0013-Rev. C, 18-Jan-16	2	Document Number: 91406
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFZ24, SiHFZ24

www.vishay.com	Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 2 - Typical Output Characteristics, TC = 175 °C

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 3 - Typical Transfer Characteristics		Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S16-0013-Rev. C, 18-Jan-16	3	Document Number: 91406
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000