Vishay IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Data Sheet
N-Channel MOSFET
G
D
S
D2PAK (TO-263)
G
D
S
I2PAK (TO-262)
G
D
S
IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 60
()V
R
DS(on)
Q
(Max.) (nC) 11
g
Q
(nC) 3.1
gs
Q
(nC) 5.8
gd
Configuration Single
= 10 V 0.20
GS
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Advanced Process Technology
• Surface Mount (IRFZ14S, SiHFZ14S)
• Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)
• 175 °C Operating Temperature
•Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extermely low
on resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extermely efficient reliabel deviece for use in a wide
variety of applications.
2
PAK is a surface mount power package capable of
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and lowest possible on-resistance
in any existing surface mount package. The D
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application.
The through-hole version (IRFZ14L, SiHFZ44L) is available
for low profile applications.
ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHFZ14S-GE3 SiHFZ14STRL-GE3
Lead (Pb)-free
Note
a. See device orientation.
IRFZ14SPbF IRFZ14STRLPbF
SiHFZ14S-E3 SiHFZ14STL-E3
a
a
a
SiHFZ14L-GE3
IRFZ14LPbF
SiHFZ14L-E3
2
PAK is
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
Linear Derating Factor 0.29 W/°C
Single Pulse Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
b. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
c. V
= 25 V, starting TJ = 25 °C, L = 548 μH, Rg = 25 , IAS = 10 A (see fig. 12).
DD
10 A, dI/dt 90 A/μs, VDD VDS, TJ 175 °C.
d. I
SD
e. 1.6 mm from case.
f. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90365
S11-1063-Rev. C, 30-May-11 1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
a
b
e
c
This document is subject to change without notice.
at 10 V
GS
C
= 100 °C 7.2
C
= 25 °C
C
TA = 25 °C 3.7
www.vishay.com
DS
± 20
GS
I
D
IDM 40
E
AS
P
D
dV/dt 4.5 V/ns
, T
J
stg
60
10
47 mJ
43
- 55 to + 175
d
www.vishay.com/doc?91000
V
AT
W
°C
IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain) R
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.063 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
a
R
thJA
thJC
DS
GS(th)
V
GSS
-40
°C/W
-3.5
VGS = 0, ID = 250 μA 60 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 60 V, VGS = 0 V - - 25
DSS
DS(on)
fs
iss
- 160 -
oss
-29-
rss
g
--3.1
gs
--5.8
gd
d(on)
r
-13-
d(off)
-19-
f
S
S
I
SM
SD
rr
rr
on
V
= 48 V, VGS = 0 V, TJ = 150 °C - - 250
DS
= 10 V ID = 6.0 A
V
GS
VDS = 25 V, ID = 6.0 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
b
b
--0.2
2.4 - - S
- 300 -
--11
= 10 A, VDS = 48 V,
I
V
GS
= 10 V
D
see fig. 6 and 13
b
-10-
V
= 30 V, ID = 10 A,
DD
R
= 24 , RD = 2.7 , see fig. 10
g
b
-50-
Between lead, and center of die contact - 7.5 - nH
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IS = 10 A, VGS = 0 V
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs
D
G
S
b
--10
--40
--1.6V
- 70 140 ns
b
- 200 400 μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
A
www.vishay.com Document Number: 90365
2 S11-1063-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 90365 www.vishay.com
S11-1063-Rev. C, 30-May-11 3
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com/doc?91000
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