Vishay IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 Data Sheet
www.vishay.com
S
G
D
P-Channel MOSFET
DPAK
(TO-252)
IPAK
(TO-251)
G
D
S
S
D
G
D
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) - 50
R
()V
DS(on)
Q
(Max.) (nC) 9.1
g
Q
(nC) 3.0
gs
Q
(nC) 5.9
gd
Configuration Single
= - 10 V 0.50
GS
FEATURES
• Surface Mountable (Order as IRFR9010,
SiHFR9010)
• Straight Lead Option (Order as IRFU9010,
SiHFU9010)
• Repetitive Avalanche Ratings
• Dynamic dV/dt Rating
• Simple Drive Requirements
• Ease of Paralleling
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dV/dt capability.
The power MOSFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The DPAK
(TO-252) surface mount package brings the advantages of
power MOSFETs to high volume applications where PC
Board surface mounting is desirable. The surface mount
option IRFR9010, SiHFR9010 is provided on 16 mm tape.
The straight lead option IRFU9010, SiHFU9010 of the device
is called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFR9010-GE3 SiHFR9010TR-GE3
Lead (Pb)-free
IRFR9010PbF IRFR9010TRPbF
SiHFR9010-E3 SiHFR9010T-E3
Note
a. See device orientation.
a
a
a
SiHFR9010TRL-GE3aSiHFU9010-GE3
IRFR9010TRLPbF
SiHFR9010TL-E3
a
a
IRFU9010PbF
SiHFU9010-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
= 25 °C
T
Continuous Drain Current V
Pulsed Drain Current
a
at - 10 V
GS
C
= 100 °C - 3.3
C
DS
± 20
GS
I
D
IDM - 21
Linear Derating Factor 0.20 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
a
= 25 °C P
c
C
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. V
= - 25 V, starting TJ = 25 °C, L = 9.7 mH, Rg = 25 , peak IL = - 5.3 A.
DD
- 5.3 A, dI/dt - 80 A/μs, VDD 40 V, TJ 150 °C, suggested Rg = 24 .
c. I
SD
d. 0.063" (1.6 mm) from case.
S13-0167-Rev. D, 04-Feb-13
d
for 10 s 300
1
E
AS
I
AR
E
AR
D
dV/dt 5.8 V/ns
, T
J
stg
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
- 50
- 5.3
136 mJ
- 5.3 A
2.5 mJ
25 W
- 55 to + 150
Document Number: 91378
V
AT
°C
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
D
S
G
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain)
a
thJA
thCS
R
thJC
- - 110
-1.7-
--5.0
Note
a. Mounting pad must cover heatsink surface area.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
DS(on)
fs
VDS = 0.8 x max. rating, VGS = 0 V, TJ = 125 °C
VGS = - 10 V ID = - 2.8 A
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
iss
-160-
oss
-30-
rss
g
V
-2.03.0
gs
-3.95.9
gd
d(on)
r
-1320
d(off)
-3559
f
D
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
TJ = 25 °C, IF = - 4,7 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width 300 μs; duty cycle 2 %.
VGS = 0 V, ID = - 250 μA - 50 - - V
VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V
= ± 20 V - - ± 500 nA
GS
VDS = max. rating, VGS = 0 V - - - 250
b
VDS - 50 V, IDS = - 2.8 A 1.1 1.7 - S
VGS = 0 V,
V
= - 25 V,
DS
f = 1.0 MHz, see fig. 9
= - 4.7 A, VDS = 0.8 x max.
I
D
= - 10 V
GS
rating, see fig. 16
(Independent operating
temperature)
= - 25 V, ID = - 4.7 A,
V
DD
R
= 24 , RD = 5.6 , see fig. 15
g
(Independent operating temperature)
Between lead,
6 mm (0.25") from
package and center of
die contact.
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IS = - 5.3 A, VGS = 0 V
b
b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Vishay Siliconix
°C/WCase-to-Sink R
- - - 1000
- 0.35 0.5
-240-
-6.19.1
-6.19.2
-4771
-4.5-
-7.5-
--- 5.3
--- 18
--- 5.5V
33 75 160 ns
0.090 0.22 0.52 μC
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
S13-0167-Rev. D, 04-Feb-13
2
Document Number: 91378
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 4 - Maximum Safe Operating Area
Fig. 5 - Typical Transconductance vs. Drain Current
Fig. 3 - Typical Saturation Characteristics
S13-0167-Rev. D, 04-Feb-13
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Fig. 6 - Typical Source-Drain Diode Forward Voltage
Document Number: 91378
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