Vishay IRFR210, IRFU210, SiHFR210, SiHFU210 Data Sheet
www.vishay.com
DPAK
(TO-252)
IPAK
(TO-251)
G
D
S
S
D
G
D
IRFR210, IRFU210, SiHFR210, SiHFU210
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 200
R
()V
DS(on)
Q
(Max.) (nC) 8.2
g
Q
(nC) 1.8
gs
Q
(nC) 4.5
gd
Configuration Single
= 10 V 1.5
GS
D
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR210, SiHFR210)
• Straight Lead (IRFU210, SiHFU210)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
G
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
S
N-Channel MOSFET
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFR210-GE3 SiHFR210TRL-GE3
Lead (Pb)-free
IRFR210PbF IRFR210TRLPbF
SiHFR210-E3 SiHFR210TL-E3
Note
a. See device orientation.
a
- SiHFR210TRR-GE3aSiHFU210-GE3
a
IRFR210TRPbFa- IRFU210PbF
a
SiHFR210T-E3a- SiHFU210-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current V
Pulsed Drain Current
a
Linear Derating Factor 0.20
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
a
Repetitive Avalanche Energy
e
b
a
Maximum Power Dissipation T
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
c
e
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting TJ = 25 °C, L = 28 mH, Rg = 25 , IAS = 2.6 A (see fig. 12).
DD
2.6 A, dI/dt 70 A/μs, VDD VDS, TJ 150 °C.
c. I
SD
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0171-Rev. E, 04-Feb-13
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
at 10 V
GS
= 25 °C
C
TA = 25 °C 2.5
d
for 10 s 260
DS
± 20
T
= 25 °C
C
T
= 100 °C 1.7
C
GS
I
D
IDM 10
E
AS
I
AR
E
AR
P
D
dV/dt 5.0 V/ns
, T
J
stg
- 55 to + 150
1
200
2.6
0.020
W/°C
95 mJ
2.7 A
2.5 mJ
25
Document Number: 91268
V
A
W
°C
IRFR210, IRFU210, SiHFR210, SiHFU210
D
G
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain) R
thJA
R
thJA
thJC
- - 110
--50
--5.0
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.30 - V/°C
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 1.6 A
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
iss
-53-
oss
-15-
rss
g
--1.8
gs
--4.5
gd
d(on)
r
-14-
d(off)
-8.9-
f
D
Between lead,
6 mm (0.25") from
package and center of
S
die contact
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
VGS = 0 V, ID = 250 μA 200 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 200 V, VGS = 0 V - - 25
V
= 160 V, VGS = 0 V, TJ = 125 °C - - 250
DS
VDS = 50 V, ID = 1.6 A
b
b
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 3.3 A, VDS = 160 V,
I
= 10 V
V
GS
VDD = 100 V, ID = 3.3 A,
R
= 24 , RD = 30 , see fig. 10
g
TJ = 25 °C, IS = 2.6 A, VGS = 0 V
D
see fig. 6 and 13
b
b
b
b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Vishay Siliconix
°C/W
--1.5
0.80 - - S
- 140 -
--8.2
-8.2-
-17-
-4.5-
-7.5-
--2.6
--10
--2.0V
- 150 310 ns
- 0.60 1.4 μC
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
S13-0171-Rev. E, 04-Feb-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
2
Document Number: 91268
IRFR210, IRFU210, SiHFR210, SiHFU210
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
S13-0171-Rev. E, 04-Feb-13
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Document Number: 91268
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