Vishay IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Data Sheet
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
DPAK
(TO-252)
IPAK
(TO-251)
G
D
S
S
D
G
D
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 600
R
(Max.) ()V
DS(on)
Q
(Max.) (nC) 14
g
Q
(nC) 2.7
gs
Q
(nC) 8.1
gd
Configuration Single
= 10 V 7.0
GS
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
D
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
G
• Power Factor Correction
TYPICAL SMPS TOPOLOGIES
• Low Power Single Transistor Flyback
S
N-Channel MOSFET
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and
Halogen-free
Lead (Pb)-free
SiHFR1N60A-GE3 SiHFR1N60ATRL-GE3
IRFR1N60APbF IRFR1N60ATRLPbF
SiHFR1N60A-E3 SiHFR1N60ATL-E3
a
SiHFR1N60ATR-GE3aSiHFR1N60ATRR-GE3aSiHFU1N60A-GE3
a
IRFR1N60ATRPbF
a
SiHFR1N60AT-E3
a
IRFR1N60ATRRPbF
a
SiHFR1N60ATR-E3
a
IRFU1N60APbF
a
SiHFU1N60A-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 0.89
C
DS
± 30
GS
I
D
IDM 5.6
Linear Derating Factor 0.28 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)
b
a
a
= 25 °C P
c
d
C
for 10 s 300
E
AS
I
AR
E
AR
D
dV/dt 3.8 V/ns
, T
J
stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
SD
d. 1.6 mm from case.
= 25 °C, L = 95 mH, Rg = 25 , IAS = 1.4 A (see fig. 12).
J
1.4 A, dI/dt 180 A/μs, VDD VDS, TJ 150 °C.
600
1.4
93 mJ
1.4 A
3.6 mJ
36 W
- 55 to + 150
V
AT
°C
S13-0171-Rev. D, 04-Feb-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1
Document Number: 91267
For technical questions, contact: hvm@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain) R
thJA
R
thJA
thJC
-110
-50
-3.5
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 0.84 A
DS(on)
fs
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Effective Output Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
iss
- 32.6 -
oss
-2.4-
rss
oss
eff. VDS = 0 V to 480 V
oss
g
--2.7
gs
--8.1
gd
d(on)
r
-18-
d(off)
-20-
f
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 1.4 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
eff. is a fixed capacitance that gives the same charging time as C
oss
VGS = 0 V, ID = 250 μA 600 - -
VDS = VGS, ID = 250 μA 2.0 - 4.0
= ± 30 V - - ± 100 nA
GS
VDS = 600 V, VGS = 0 V - - 25
V
= 480 V, VGS = 0 V, TJ = 150 °C - - 250
DS
b
VDS = 50 V, ID = 0.84 A 0.88 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 1.0 V, f = 1.0 MHz - 320 -
V
DS
V
= 0 V
GS
V
= 10 V
GS
R
= 2.15 , RD = 178 , see fig. 10
g
TJ = 25 °C, IS = 1.4 A, VGS = 0 V
V
= 480 V, f = 1.0 MHz - 11.5 -
DS
= 1.4 A, VDS = 400 V,
I
D
see fig. 6 and 13
= 250 V, ID = 1.4 A,
V
DD
c
b
b
b
b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising from 0 to 80 % VDS.
oss
Vishay Siliconix
°C/W
--7.0
- 229 -
- 130 -
--14
-9.8-
-14-
--1.4
--5.6
--1.6V
- 290 440 ns
- 510 760 μC
V
μA
pF
nC Gate-Source Charge Q
ns
A
S13-0171-Rev. D, 04-Feb-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
2
Document Number: 91267
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
10
1
0.1
D
I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20μs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig. 1 - Typical Output Characteristics
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
°
T = 150 C
J
1
°
T = 25 C
J
D
I , Drain-to-Source Current (A)
V = 100V
DS
0.1
4.0 5.0 6.0 7.0 8.0 9.0
V , Gate-to-Source Voltage (V)
GS
20μs PULSE WIDTH
Fig. 3 - Typical Transfer Characteristics
3.0
2.5
2.0
I =
D
1.4A
1
4.5V
D
I , Drain-to-Source Current (A)
20μs PULSE WIDTH
°
T = 150 C
0.1
1 10 100
V , Drain- to-Sour ce Voltage (V)
DS
J
Fig. 2 - Typical Output Characteristics
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
V =
GS
°
Fig. 4 - Normalized On-Resistance vs. Temperature
10V
S13-0171-Rev. D, 04-Feb-13
3
Document Number: 91267
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
1
10
100
1000
10000
1 10 100 1000
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0 2 4 6 8 10 12 14
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
1.4A
V = 120V
DS
V = 300V
DS
V = 480V
DS
www.vishay.com
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Vishay Siliconix
10
°
T = 150 C
J
1
°
T = 25 C
J
SD
I , Reverse Drain Current (A)
V = 0 V
0.1
0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
SD
Fig. 7 - Typical Source-Drain Diode Forward Voltage
GS
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
10
1
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
0.1
10 100 1000 10000
°
J
V , Drain-to-Source Voltage (V)
DS
BY R
DS(on)
10us
100us
1ms
10ms
Fig. 8 - Maximum Safe Operating Area
S13-0171-Rev. D, 04-Feb-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4
For technical questions, contact: hvm@vishay.com
Document Number: 91267
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