N-Channel MOSFET
G
D
S
I2PAK
(TO-262)
S
D
G
IRFSL9N60A, SiHFSL9N60A
Power MOSFET
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 600
()V
R
DS(on)
Q
(Max.) (nC) 49
g
(nC) 13
Q
gs
Q
(nC) 20
gd
Configuration Single
= 10 V 0.75
GS
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Q
Requirement
• Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
• This Device is only for Through Hole Application
APPLICABLE OFF LINE SMPS TOPOLOGIES
• Active Clamped Forward
• Main Switch
ORDERING INFORMATION
Package I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHFSL9N60A-GE3
Lead (Pb)-free
IRFSL9N60APbF
SiHFSL9N60A-E3
Results in Simple Drive
g
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
= 25 °C
T
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 5.8
C
DS
± 30
GS
I
D
IDM 37
Linear Derating Factor 1.3 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
a
= 25 °C P
C
c
Operating Junction and Storage Temperature Range T
E
AS
I
AR
E
AR
D
dV/dt 5.0 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
SD
d. 1.6 mm from case.
= 25 °C, L = 6.8 mH, Rg = 25 , IAS = 9.2 A (see fig. 12).
J
9.2 A, dI/dt 50 A/μs, VDD VDS, TJ 150 °C.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90362
www.vishay.com
S11-1045-Rev. C, 30-May-11 1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
600
9.2
290 mJ
9.2 A
17 mJ
170 W
- 55 to + 150
d
www.vishay.com/doc?91000
V
AT
°C
IRFSL9N60A, SiHFSL9N60A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)
Maximum Junction-to-Case (Drain) R
R
thJA
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Effective Output Capacitance C
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
eff. is a fixed capacitance that gives the same charging time as C
OSS
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 5.5 A
DS(on)
fs
iss
- 180 -
oss
-7.1-
rss
oss
eff. VDS = 0 V to 480 V
oss
g
--13
gs
--
gd
d(on)
r
-30-
d(off)
-22-
f
S
V
V
GS
V
GS
R
MOSFET symbol
showing the
integral reverse
I
SM
SD
rr
rr
on
p - n junction diode
TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs
-40
°C/W
-0.75
VGS = 0, ID = 250 μA 600 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 30 V - - ± 100 nA
GS
VDS = 600 V, VGS = 0 V - - 25
= 480 V, VGS = 0 V, TJ = 125 °C - - 250
DS
VDS = 25 V, ID = 3.1 A
VGS = 0 V
V
= 25 V
DS
f = 1.0 MHz, see fig. 5
V
DS
= 0 V
V
DS
= 1.0 V, f = 1.0 MHz - 1957 -
= 480 V, f = 1.0 MHz - 49 -
b
b
- - 0.75
5.5 - - S
- 1400 -
c
-96-
--49
= 9.2 A, VDS = 400 V
I
= 10 V
D
see fig. 6 and 13
b
20
-13-
= 300 V, ID = 9.2 A
V
DD
= 9.1 , RD = 35.5 , see fig. 10
g
G
TJ = 25 °C, IS = 9.2 A, VGS = 0 V
b
D
S
b
-25-
--9.2
--37
--1.5V
- 530 800 ns
b
-3.04.4μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising from 0 to 80% VDS.
OSS
μA
pF
nC
ns
A
www.vishay.com Document Number: 90362
2 S11-1045-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.7V
1
10
100
1 10 100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.7V
0.1
1
10
100
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
9.2A
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFSL9N60A, SiHFSL9N60A
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 90362 www.vishay.com
S11-1045-Rev. C, 30-May-11 3
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com/doc?91000
IRFSL9N60A, SiHFSL9N60A
0
400
800
1200
1600
2000
2400
1101001000
C, Capacitance (pF)
DS
V , Drain-to-S ource Voltage(V
)
A
V = 0V, f = 1M H z
C = C + C , C SHO R TE D
C = C
C = C + C
GS
iss gs g d d s
rss g d
oss ds gd
C
iss
C
oss
C
rss
0 10 20 30 40 50
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
9.2A
V = 120V
DS
V = 300V
DS
V = 480V
DS
400V
0.1
1
10
100
0.2 0.5 0.7 1.0 1.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
0.1
1
10
100
1000
10 100 1000 10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T T= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com Document Number: 90362
4 S11-1045-Rev. C, 30-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
This document is subject to change without notice.
www.vishay.com/doc?91000
25 50 75 100 125 150
0.0
2.0
4.0
6.0
8.0
10.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRFSL9N60A, SiHFSL9N60A
Vishay Siliconix
R
D.U.T.
D
+
V
-
DD
V
DS
V
GS
R
g
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 10b - Switching Time Waveforms
Document Number: 90362 www.vishay.com
S11-1045-Rev. C, 30-May-11 5
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com/doc?91000
IRFSL9N60A, SiHFSL9N60A
A
R
g
I
AS
0.01
Ω
t
p
D.U.T.
L
V
DS
+
-
V
DD
Driver
A
15 V
20 V
I
AS
V
DS
t
p
25 50 75 100 125 150
0
100
200
300
400
500
600
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
4.1A
5.8A
9.2A
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
10 V
Q
V
G
GS
www.vishay.com Document Number: 90362
6 S11-1045-Rev. C, 30-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
Q
G
Q
GD
Charge
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
This document is subject to change without notice.
www.vishay.com/doc?91000
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
V
GS
= 10 Va
I
SD
Driver gate drive
D.U.T. l
SD
waveform
D.U.T. V
DS
waveform
Inductor current
D =
P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
V
DD
• dV/dt controlled by R
g
• Driver same type as D.U.T.
•
I
SD
controlled by duty factor “D”
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
R
g
Note
a. V
GS
= 5 V for logic level devices
V
DD
IRFSL9N60A, SiHFSL9N60A
Vishay Siliconix
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90362
.
Fig. 14 - For N-Channel
Document Number: 90362 www.vishay.com
S11-1045-Rev. C, 30-May-11 7
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www.vishay.com/doc?91000
TO-263AB (HIGH VOLTAGE)
(Datum A)
34
E
L1
4
D
L2
4
C
1
B
B
C
3
2
B
B
Package Information
Vishay Siliconix
A
A
5
H
Detail A
B
A
c2
Gauge
plane
0° to 8°
L
L3
L4
Detail “A”
Rotated 90° CW
scale 8:1
H
B
Seating plane
A1
2 x e
Lead tip
2 x b2
2 x b
0.010 A B
MM
Plating
(c)
Section B - B and C - C
c
± 0.004 B
5
b1, b3
(b, b2)
Scale: none
M
Base
metal
c1
A
E
D1
4
5
E1
View A - A
4
MILLIMETERS INCHES MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -
A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420
b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -
b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066
c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364 www.vishay.com
Revision: 15-Sep-08 1
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Disclaimer
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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