Vishay IRFSL11N50A, SiHFSL11N50A Data Sheet

IRFSL11N50A, SiHFSL11N50A

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)

500

 

RDS(on) ( )

VGS = 10 V

0.55

Qg (Max.) (nC)

51

 

Qgs (nC)

12

 

Qgd (nC)

23

 

Configuration

Single

 

I2PAK

D

 

(TO-262)

 

 

 

G

 

 

S

 

G

D

 

S

 

N-Channel MOSFET

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

Fast Switching

Ease of Paralleling

Simple Drive Requirements

Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

ORDERING INFORMATION

Package

I2PAK (TO-262)

Lead (Pb)-free

IRFSL11N50APbF

 

SiHFSL11N50A-E3

 

 

 

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

 

 

SYMBOL

LIMIT

UNIT

 

 

 

 

 

 

Drain-Source Voltage

 

 

VDS

500

V

Gate-Source Voltage

 

 

VGS

± 30

 

 

 

Continuous Drain Current

 

VGS at 10 V

TC = 25 °C

ID

11

 

 

TC = 100 °C

7.0

A

 

 

 

 

Pulsed Drain Currenta

 

 

IDM

44

 

Linear Derating Factor

 

 

 

1.3

W/°C

 

 

 

 

 

 

Single Pulse Avalanche Energyb

 

 

EAS

390

mJ

Repetitive Avalanche Currenta

 

 

IAR

11

A

Repetitive Avalanche Energya

 

 

EAR

19

mJ

Maximum Power Dissipation

 

TC = 25 °C

PD

190

W

Peak Diode Recovery dV/dtc

 

 

dV/dt

4.1

V/ns

Operating Junction and Storage Temperature Range

 

 

TJ, Tstg

- 55 to + 175

°C

Soldering Recommendations (Peak Temperature)

 

for 10 s

 

300d

 

 

 

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Starting TJ = 25 °C, L = 6.4 mH, RG = 25 , IAS = 11 A (see fig. 12).

c.ISD 11 A, dI/dt 185 A/μs, VDD VDS, TJ 175 °C.

d.1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91288

www.vishay.com

S11-1054-Rev. B, 30-May-11

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFSL11N50A, SiHFSL11N50A

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

 

 

 

 

 

Maximum Junction-to-Ambient

RthJA

-

40

°C/W

Maximum Junction-to-Case (Drain)

RthJC

-

0.75

 

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

 

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Static

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Drain-Source Breakdown Voltage

 

VDS

VGS = 0, ID = 250 μA

500

-

-

V

VDS Temperature Coefficient

 

VDS/TJ

Reference to 25 °C, ID = 1 mA

-

0.57

-

V/°C

Gate-Source Threshold Voltage

 

VGS(th)

VDS = VGS, ID = 250 μA

2.0

-

4.0

V

Gate-Source Leakage

 

IGSS

VGS = ± 30 V

 

 

 

 

 

 

-

-

± 100

nA

Zero Gate Voltage Drain Current

 

IDSS

VDS = 500 V, VGS = 0 V

-

-

25

μA

 

VDS = 400 V, VGS = 0 V, TJ = 150 °C

-

-

250

 

 

 

 

Drain-Source On-State Resistance

 

RDS(on)

VGS = 10 V

 

ID = 6.6 Ab

-

-

0.55

 

Forward Transconductance

 

gfs

VDS = 50 V, ID = 6.6 Ab

6.0

-

-

S

Dynamic

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Capacitance

 

Ciss

 

VGS = 0 V

 

 

 

 

 

 

-

1426

-

 

Output Capacitance

 

Coss

 

 

 

 

 

 

 

 

 

 

 

 

 

VDS = 25 V

 

 

 

 

 

 

-

208

-

 

 

 

 

f = 1.0 MHz, see fig. 5

 

 

 

 

Reverse Transfer Capacitance

 

Crss

-

9.6

-

pF

 

 

 

 

 

 

 

 

 

 

Output Capacitance

 

Coss

 

 

VDS = 1.0 V, f = 1.0 MHz

-

1954

-

 

 

 

 

 

VGS = 0 V

 

VDS = 400 V, f = 1.0 MHz

-

53

-

 

 

 

 

 

 

Effective Output Capacitance

 

Coss eff.

 

 

VDS = 0 V to 400 Vc

-

110

-

 

Total Gate Charge

 

Qg

 

 

 

 

 

 

 

 

 

-

-

51

 

 

 

 

VGS = 10 V

 

ID = 11 A, VDS = 400 V

 

 

 

nC

Gate-Source Charge

 

Qgs

 

-

-

12

 

 

see fig. 6 and 13b

Gate-Drain Charge

 

Qgd

 

 

 

 

 

 

 

 

 

-

-

23

 

Turn-On Delay Time

 

td(on)

 

 

 

 

 

 

 

 

 

-

14

-

 

Rise Time

 

tr

VDD = 250 V, ID = 11 A

-

34

-

ns

Turn-Off Delay Time

 

td(off)

RG = 9.1 , RD = 22 , see fig. 10b

-

32

-

 

 

Fall Time

 

tf

 

 

 

 

 

 

 

 

 

-

27

-

 

Internal Drain Inductance

 

LD

Between lead,

 

 

 

 

 

D

-

4.5

-

 

 

6 mm (0.25") from

 

 

 

 

 

 

 

Internal Source Inductance

 

LS

package and center of

G

 

 

 

 

-

7.5

-

nH

 

 

 

 

 

 

 

 

 

 

 

 

die contact

 

 

 

 

 

S

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Drain-Source Body Diode Characteristics

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Continuous Source-Drain Diode Current

 

IS

MOSFET symbol

 

 

 

 

 

D

-

-

11

 

 

 

 

showing the

 

 

 

 

 

 

 

 

 

 

A

 

 

 

 

 

 

 

 

 

 

 

 

 

Pulsed Diode Forward Currenta

 

ISM

integral reverse

 

G

 

 

 

 

-

-

44

 

p - n junction diode

 

 

 

 

 

S

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Body Diode Voltage

 

VSD

TJ = 25 °C, IS = 11 A, VGS = 0 Vb

-

-

1.5

V

Body Diode Reverse Recovery Time

 

trr

TJ = 25 °C, IF = 11 A, dI/dt = 100 A/μsb

-

530

790

ns

Body Diode Reverse Recovery Charge

 

Qrr

-

3.4

5.1

μC

 

 

 

 

 

 

 

 

 

 

Forward Turn-On Time

 

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

c.Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80% VDS.

www.vishay.com

Document Number: 91288

2

S11-1054-Rev. B, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Vishay IRFSL11N50A, SiHFSL11N50A Data Sheet

IRFSL11N50A, SiHFSL11N50A

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

 

 

Fig. 3 - Typical Transfer Characteristics

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Fig. 2 - Typical Output Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91288

www.vishay.com

S11-1054-Rev. B, 30-May-11

3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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