IRFSL11N50A, SiHFSL11N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) |
500 |
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RDS(on) ( ) |
VGS = 10 V |
0.55 |
Qg (Max.) (nC) |
51 |
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Qgs (nC) |
12 |
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Qgd (nC) |
23 |
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Configuration |
Single |
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I2PAK |
D |
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(TO-262) |
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G |
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S |
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G |
D |
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S |
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N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
•Fast Switching
•Ease of Paralleling
•Simple Drive Requirements
•Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
ORDERING INFORMATION
Package |
I2PAK (TO-262) |
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Lead (Pb)-free |
IRFSL11N50APbF |
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SiHFSL11N50A-E3 |
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ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER |
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SYMBOL |
LIMIT |
UNIT |
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Drain-Source Voltage |
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VDS |
500 |
V |
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Gate-Source Voltage |
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VGS |
± 30 |
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Continuous Drain Current |
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VGS at 10 V |
TC = 25 °C |
ID |
11 |
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TC = 100 °C |
7.0 |
A |
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Pulsed Drain Currenta |
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IDM |
44 |
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Linear Derating Factor |
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1.3 |
W/°C |
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Single Pulse Avalanche Energyb |
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EAS |
390 |
mJ |
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Repetitive Avalanche Currenta |
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IAR |
11 |
A |
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Repetitive Avalanche Energya |
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EAR |
19 |
mJ |
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Maximum Power Dissipation |
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TC = 25 °C |
PD |
190 |
W |
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Peak Diode Recovery dV/dtc |
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dV/dt |
4.1 |
V/ns |
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Operating Junction and Storage Temperature Range |
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TJ, Tstg |
- 55 to + 175 |
°C |
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Soldering Recommendations (Peak Temperature) |
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for 10 s |
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300d |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Starting TJ = 25 °C, L = 6.4 mH, RG = 25 , IAS = 11 A (see fig. 12).
c.ISD 11 A, dI/dt 185 A/μs, VDD VDS, TJ 175 °C.
d.1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91288 |
www.vishay.com |
S11-1054-Rev. B, 30-May-11 |
1 |
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFSL11N50A, SiHFSL11N50A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER |
SYMBOL |
TYP. |
MAX. |
UNIT |
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Maximum Junction-to-Ambient |
RthJA |
- |
40 |
°C/W |
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Maximum Junction-to-Case (Drain) |
RthJC |
- |
0.75 |
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER |
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SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
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VDS |
VGS = 0, ID = 250 μA |
500 |
- |
- |
V |
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VDS Temperature Coefficient |
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VDS/TJ |
Reference to 25 °C, ID = 1 mA |
- |
0.57 |
- |
V/°C |
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Gate-Source Threshold Voltage |
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VGS(th) |
VDS = VGS, ID = 250 μA |
2.0 |
- |
4.0 |
V |
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Gate-Source Leakage |
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IGSS |
VGS = ± 30 V |
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- |
- |
± 100 |
nA |
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Zero Gate Voltage Drain Current |
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IDSS |
VDS = 500 V, VGS = 0 V |
- |
- |
25 |
μA |
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VDS = 400 V, VGS = 0 V, TJ = 150 °C |
- |
- |
250 |
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Drain-Source On-State Resistance |
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RDS(on) |
VGS = 10 V |
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ID = 6.6 Ab |
- |
- |
0.55 |
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Forward Transconductance |
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gfs |
VDS = 50 V, ID = 6.6 Ab |
6.0 |
- |
- |
S |
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Dynamic |
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Input Capacitance |
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Ciss |
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VGS = 0 V |
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- |
1426 |
- |
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Output Capacitance |
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Coss |
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VDS = 25 V |
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- |
208 |
- |
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f = 1.0 MHz, see fig. 5 |
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Reverse Transfer Capacitance |
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Crss |
- |
9.6 |
- |
pF |
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Output Capacitance |
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Coss |
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VDS = 1.0 V, f = 1.0 MHz |
- |
1954 |
- |
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VGS = 0 V |
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VDS = 400 V, f = 1.0 MHz |
- |
53 |
- |
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Effective Output Capacitance |
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Coss eff. |
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VDS = 0 V to 400 Vc |
- |
110 |
- |
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Total Gate Charge |
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Qg |
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- |
- |
51 |
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VGS = 10 V |
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ID = 11 A, VDS = 400 V |
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nC |
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Gate-Source Charge |
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Qgs |
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- |
- |
12 |
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see fig. 6 and 13b |
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Gate-Drain Charge |
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Qgd |
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- |
- |
23 |
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Turn-On Delay Time |
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td(on) |
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- |
14 |
- |
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Rise Time |
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tr |
VDD = 250 V, ID = 11 A |
- |
34 |
- |
ns |
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Turn-Off Delay Time |
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td(off) |
RG = 9.1 , RD = 22 , see fig. 10b |
- |
32 |
- |
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Fall Time |
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tf |
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- |
27 |
- |
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Internal Drain Inductance |
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LD |
Between lead, |
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D |
- |
4.5 |
- |
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6 mm (0.25") from |
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Internal Source Inductance |
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LS |
package and center of |
G |
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- |
7.5 |
- |
nH |
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die contact |
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S |
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Drain-Source Body Diode Characteristics |
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Continuous Source-Drain Diode Current |
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IS |
MOSFET symbol |
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D |
- |
- |
11 |
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showing the |
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A |
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Pulsed Diode Forward Currenta |
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ISM |
integral reverse |
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G |
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- |
- |
44 |
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p - n junction diode |
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S |
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Body Diode Voltage |
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VSD |
TJ = 25 °C, IS = 11 A, VGS = 0 Vb |
- |
- |
1.5 |
V |
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Body Diode Reverse Recovery Time |
|
trr |
TJ = 25 °C, IF = 11 A, dI/dt = 100 A/μsb |
- |
530 |
790 |
ns |
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Body Diode Reverse Recovery Charge |
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Qrr |
- |
3.4 |
5.1 |
μC |
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Forward Turn-On Time |
|
ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width 300 μs; duty cycle 2 %.
c.Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80% VDS.
www.vishay.com |
Document Number: 91288 |
2 |
S11-1054-Rev. B, 30-May-11 |
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFSL11N50A, SiHFSL11N50A
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics |
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Fig. 3 - Typical Transfer Characteristics |
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Fig. 2 - Typical Output Characteristics |
Fig. 4 - Normalized On-Resistance vs. Temperature |
Document Number: 91288 |
www.vishay.com |
S11-1054-Rev. B, 30-May-11 |
3 |
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000