Vishay IRFSL11N50A, SiHFSL11N50A Data Sheet
N-Channel MOSFET
G
D
S
IRFSL11N50A, SiHFSL11N50A
Power MOSFET
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 500
()V
R
DS(on)
Q
(Max.) (nC) 51
g
Q
(nC) 12
gs
Q
(nC) 23
gd
Configuration Single
I2PAK
(TO-262)
= 10 V 0.55
GS
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
S
D
G
ORDERING INFORMATION
Package I2PAK (TO-262)
Lead (Pb)-free
IRFSL11N50APbF
SiHFSL11N50A-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 7.0
C
DS
± 30
GS
I
D
IDM 44
Linear Derating Factor 1.3 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
a
= 25 °C P
c
C
Operating Junction and Storage Temperature Range T
E
AS
I
AR
E
AR
D
dV/dt 4.1 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
SD
d. 1.6 mm from case.
= 25 °C, L = 6.4 mH, RG = 25 , IAS = 11 A (see fig. 12).
J
11 A, dI/dt 185 A/μs, VDD VDS, TJ 175 °C.
500
11
390 mJ
11 A
19 mJ
190 W
- 55 to + 175
d
V
AT
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91288
www.vishay.com
S11-1054-Rev. B, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFSL11N50A, SiHFSL11N50A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.57 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Effective Output Capacitance C
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
eff. is a fixed capacitance that gives the same charging time as C
oss
www.vishay.com Document Number: 91288
2 S11-1054-Rev. B, 30-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 6.6 A
DS(on)
fs
iss
- 208 -
oss
-9.6-
rss
oss
eff. VDS = 0 V to 400 V
oss
g
--12
gs
--
gd
d(on)
r
-32-
d(off)
-27-
f
D
V
V
GS
V
GS
R
Between lead,
6 mm (0.25") from
package and center of
S
S
I
SM
SD
rr
rr
on
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 11 A, dI/dt = 100 A/μs
This document is subject to change without notice.
-40
-0.75
°C/W
VGS = 0, ID = 250 μA 500 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 30 V - - ± 100 nA
GS
VDS = 500 V, VGS = 0 V - - 25
= 400 V, VGS = 0 V, TJ = 150 °C - - 250
DS
VDS = 50 V, ID = 6.6 A
VGS = 0 V
V
= 25 V
DS
f = 1.0 MHz, see fig. 5
V
DS
= 0 V
V
DS
= 1.0 V, f = 1.0 MHz - 1954 -
= 400 V, f = 1.0 MHz - 53 -
b
b
- - 0.55
6.0 - - S
- 1426 -
c
- 110 -
--51
= 11 A, VDS = 400 V
I
= 10 V
D
see fig. 6 and 13
b
23
-14-
= 250 V, ID = 11 A
V
DD
= 9.1 , RD = 22 , see fig. 10
G
G
G
TJ = 25 °C, IS = 11 A, VGS = 0 V
b
D
S
D
S
b
-34-
-4.5-
-7.5-
--11
--44
--1.5V
- 530 790 ns
b
-3.45.1μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising from 0 % to 80% VDS.
oss
www.vishay.com/doc?91000
μA
pF
nC
ns
nH
A
IRFSL11N50A, SiHFSL11N50A
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91288 www.vishay.com
S11-1054-Rev. B, 30-May-11 3
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com/doc?91000
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