Vishay IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Data Sheet

IRFR9214, IRFU9214, SiHFR9214, SiHFU9214

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)			- 250
RDS(on) ( )			VGS = - 10 V	3.0
Qg (Max.) (nC)			14
Qgs (nC)			3.1
Qgd (nC)			6.8
Configuration			Single
				S
DPAK	IPAK
(TO-252)	(TO-251)		G
	D
D
G	S	D	S
	G
				D
			P-Channel MOSFET

FEATURES

• P-Channel

• Surface Mount (IRFR9214, SiHFR9214)

• Straight Lead (IRFU9214, SiHFU9214)

• Advanced Process Technology

•Fast Switching

•Fully Avalanche Rated

•Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

ORDERING INFORMATION

	Package	DPAK (TO-252)	DPAK (TO-252)	DPAK (TO-252)	IPAK (TO-251)
	Lead (Pb)-free and Halogen-free	SiHFR9214-GE3	SiHFR9214TRL-GE3	SiHFR9214TR-GE3	SiHFU9214-GE3
	Lead (Pb)-free	IRFR9214PbF	IRFR9214TRLPbFa	IRFR9214TRPbFa	IRFU9214PbF
		SiHFR9214-E3	SiHFR9214TL-E3a	SiHFR9214T-E3a	SiHFU9214-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	- 250	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at - 10 V	TC = 25 °C	ID	- 2.7
			TC = 100 °C		- 1.7	A
Pulsed Drain Currenta				IDM	- 11
Linear Derating Factor					0.40	W/°C
Single Pulse Avalanche Energyb				EAS	100	mJ
Repetitive Avalanche Currenta				IAR	- 2.7	A
Repetitive Avalanche Energya				EAR	5.0	mJ
Maximum Power Dissipation		TC = 25 °C		PD	50	W
Peak Diode Recovery dV/dtc				dV/dt	- 5.0	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)d		for 10 s			260

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Starting TJ = 25 °C, L = 27 mH, Rg = 25 , IAS = - 2.7 A (see fig. 12).

c.ISD - 2.7 A, dI/dt 600 A/μs, VDD VDS, TJ 150 °C.

d.1.6 mm from case.

S13-0166-Rev. D, 04-Feb-13	1	Document Number: 91282
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR9214, IRFU9214, SiHFR9214, SiHFU9214

www.vishay.com					Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER	SYMBOL	MIN.	TYP.	MAX.		UNIT
Maximum Junction-to-Ambient	RthJA	-	-	110
Maximum Junction-to-Ambient	RthJA	-	-	50		°C/W
(PCB Mount)a
Maximum Junction-to-Case (Drain)	RthJC	-	-	2.5

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

	PARAMETER	SYMBOL	TEST CONDITIONS			MIN.	TYP.	MAX.	UNIT
	Static
	Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = - 250 μA			- 250	-	-	V
	VDS Temperature Coefficient	VDS/TJ	Reference to 25 °C, ID = - 1 mA			-	- 0.25	-	V/°C
	Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = - 250 μA			- 2.0	-	- 4.0	V
	Gate-Source Leakage	IGSS		VGS = ± 20 V		-	-	± 100	nA
	Zero Gate Voltage Drain Current	IDSS	VDS = - 250 V, VGS = 0 V			-	-	- 100	μA
			VDS = - 200 V, VGS = 0 V, TJ = 125 °C			-	-	- 500
	Drain-Source On-State Resistance	RDS(on)	VGS = - 10 V	ID = - 1.7 Ab		-	-	3.0
	Forward Transconductance	gfs	VDS = - 50 V, ID = - 1.7 A			0.9	-	-	S
	Dynamic
	Input Capacitance	Ciss		VGS = 0 V,		-	220	-
	Output Capacitance	Coss		VDS = - 25 V,		-	75	-	pF
	Reverse Transfer Capacitance	Crss	f = 1.0 MHz, see fig. 5			-	11	-
	Total Gate Charge	Qg		ID = - 1.7 A, VDS = - 200 V,		-	-	14
	Gate-Source Charge	Qgs	VGS = - 10 V			-	-	3.1	nC
				see fig. 6 and 13b
	Gate-Drain Charge	Qgd				-	-	6.8
	Turn-On Delay Time	td(on)				-	11	-
	Rise Time	tr	VDD = - 125 V, ID = - 1.7 A,			-	14	-	ns
	Turn-Off Delay Time	td(off)	Rg = 21 , RD = 70 , see fig. 10b			-	20	-
	Fall Time	tf				-	17	-
	Internal Drain Inductance	LD	Between lead,		D	-	4.5	-
			6 mm (0.25") from
									nH
			package and center of		G
	Internal Source Inductance	LS	die contact			-	7.5	-
					S
	Drain-Source Body Diode Characteristics
	Continuous Source-Drain Diode Current	IS	MOSFET symbol		D	-	-	- 2.7
			showing the						A
			integral reverse		G
	Pulsed Diode Forward Currenta	ISM				-	-	- 11
			p - n junction diode		S
	Body Diode Voltage	VSD	TJ = 25 °C, IS = - 2.7 A, VGS = 0 Vb			-	-	- 5.8	V
	Body Diode Reverse Recovery Time	trr	TJ = 25 °C, IF = - 1.7 A, dI/dt = 100 A/μsb			-	150	220	ns
	Body Diode Reverse Recovery Charge	Qrr				-	870	1300	nC
	Forward Turn-On Time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

S13-0166-Rev. D, 04-Feb-13	2	Document Number: 91282
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR9214, IRFU9214, SiHFR9214, SiHFU9214

www.vishay.com	Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

	10	VGS
	TOP	-15V
<![if ! IE]> <![endif]>(A)		-10V
		-8.0V
		-7.0V
<![if ! IE]> <![endif]>Current		-6.0V
		-5.5V
		-5.0V
	BOTTOM -4.5V
<![if ! IE]> <![endif]>-to-Source	1
			-4.5V
<![if ! IE]> <![endif]>, Drain
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>-I
			20μs PULSE WIDTH
	0.1		TJ= 25 °C
		1	10	100
	0.1

-VDS , Drain-to-Source Voltage (V)

	Fig. 1 -	Typical Output Characteristics, TC = 25 °C
	10	VGS
	TOP
		-15V
<![if ! IE]> <![endif]>(A)		-10V
		-8.0V
		-7.0V
<![if ! IE]> <![endif]>Current		-6.0V
		-5.5V
		-5.0V
	BOTTOM -4.5V
<![if ! IE]> <![endif]>-to-Source	1
			-4.5V
<![if ! IE]> <![endif]>, Drain
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>-I
			20μs PULSE WIDTH
	0.1		TJ= 150°C
		1	10	100
	0.1

-VDS , Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics, TC = 150 °C

	10
<![if ! IE]> <![endif]>(A)
<![if ! IE]> <![endif]>SourceCurrent	TJ = 25°C	T = 150° C
		J
	1
<![if ! IE]> <![endif]>, Drain-to-
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>-I
		VDS= -50V

20μs PULSE WIDTH

0.1

4

5

6

7

8

9

10

-VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

	2.5	I	= -2.7A
<![if ! IE]> <![endif]>Resistance		D
	2.0
<![if ! IE]> <![endif]>Source-to-DrainOn (Normalized)
	1.5
	1.0
<![if ! IE]> <![endif]>,	0.5
<![if ! IE]> <![endif]>DS(on)
			VGS=-10V
<![if ! IE]> <![endif]>R	0.0
			-40 -20 0 20 40 60 80 100 120 140 160
	-60

TJ, Junction Temperature ( °C)

Fig. 4 - Normalized On-Resistance vs. Temperature

S13-0166-Rev. D, 04-Feb-13	3	Document Number: 91282
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR9214, IRFU9214, SiHFR9214, SiHFU9214

	www.vishay.com
	400	= 0V,	f = 1MHz
	VGS
	Ciss	= Cgs + Cgd ,		Cds	SHORTED
	Crss	= Cgd
	Coss = Cds + Cgd
<![if ! IE]> <![endif]>(pF)	300
<![if ! IE]> <![endif]>C, Capacitance	200			Ciss
	100
				Coss
	0			Crss
			10		100
	1

-VDS, Drain-to-Source Voltage (V)

Vishay Siliconix

	10
<![if ! IE]> <![endif]>(A)			TJ = 150°C
<![if ! IE]> <![endif]>Drain Current
	1
<![if ! IE]> <![endif]>Reverse			TJ = 25°C
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>SD
<![if ! IE]> <![endif]>I
	0.1			VGS = 0 V
		2.0	3.0	4.0	5.0
	1.0

VSD,Source-to-Drain Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

	20	ID = -1.7 A	VDS =-200V
<![if ! IE]> <![endif]>(V)
			VDS =-125V
<![if ! IE]> <![endif]>Voltage	16		VDS =-50V
<![if ! IE]> <![endif]>-to-Source	12
	8
<![if ! IE]> <![endif]>, Gate
<![if ! IE]> <![endif]>GS	4
<![if ! IE]> <![endif]>-V				FOR TEST CIRCUIT
	0			SEE FIGURE 13
		3	6	9	12	15
	0

QG, Total Gate Charge (nC)

	100
	OPERATION IN THIS AREA LIMITED
		BY RDS(on)
<![if ! IE]> <![endif]>(A)	10
<![if ! IE]> <![endif]>Current
		100us
<![if ! IE]> <![endif]>, Drain	1	1ms
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>-I
	TC= 25°C	10ms
	TJ = 150°C
	Single Pulse
	0.1	100	1000
	10

-VDS, Drain-to-Source Voltage (V)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

S13-0166-Rev. D, 04-Feb-13	4	Document Number: 91282
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000