Vishay IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 Data Sheet

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)	- 50
RDS(on) ( )	VGS = - 10 V	0.50
Qg (Max.) (nC)	9.1
Qgs (nC)	3.0
Qgd (nC)	5.9
Configuration	Single
		S
DPAK	IPAK
(TO-252)	(TO-251)
D	G
D
S	D S
G

G

D

P-Channel MOSFET

FEATURES

•Surface Mountable (Order as IRFR9010, SiHFR9010)

•Straight Lead Option (Order as IRFU9010,

SiHFU9010)

• Repetitive Avalanche Ratings

• Dynamic dV/dt Rating

•Simple Drive Requirements

•Ease of Paralleling

•Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dV/dt capability.

The power MOSFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.

Surface mount packages enhance circuit performance by reducing stray inductances and capacitance. The DPAK (TO-252) surface mount package brings the advantages of power MOSFETs to high volume applications where PC Board surface mounting is desirable. The surface mount option IRFR9010, SiHFR9010 is provided on 16 mm tape. The straight lead option IRFU9010, SiHFU9010 of the device is called the IPAK (TO-251).

They are well suited for applications where limited heat dissipation is required such as, computers and peripherals, telecommunication equipment, DC/DC converters, and a wide range of consumer products.

ORDERING INFORMATION

	Package	DPAK (TO-252)	DPAK (TO-252)	DPAK (TO-252)	IPAK (TO-251)
	Lead (Pb)-free and Halogen-free	SiHFR9010-GE3	SiHFR9010TR-GE3a	SiHFR9010TRL-GE3a	SiHFU9010-GE3
	Lead (Pb)-free	IRFR9010PbF	IRFR9010TRPbFa	IRFR9010TRLPbFa	IRFU9010PbF
		SiHFR9010-E3	SiHFR9010T-E3a	SiHFR9010TL-E3a	SiHFU9010-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	- 50	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at - 10 V	TC = 25 °C	ID	- 5.3
			TC = 100 °C		- 3.3	A
Pulsed Drain Currenta				IDM	- 21
Linear Derating Factor					0.20	W/°C
Single Pulse Avalanche Energyb				EAS	136	mJ
Repetitive Avalanche Currenta				IAR	- 5.3	A
Repetitive Avalanche Energya				EAR	2.5	mJ
Maximum Power Dissipation		TC = 25 °C		PD	25	W
Peak Diode Recovery dV/dtc				dV/dt	5.8	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)d		for 10 s			300

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).

b.VDD = - 25 V, starting TJ = 25 °C, L = 9.7 mH, Rg = 25 , peak IL = - 5.3 A.

c.ISD - 5.3 A, dI/dt - 80 A/μs, VDD 40 V, TJ 150 °C, suggested Rg = 24 .

d.0.063" (1.6 mm) from case.

S13-0167-Rev. D, 04-Feb-13	1	Document Number: 91378
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010

www.vishay.com					Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER	SYMBOL	MIN.	TYP.	MAX.		UNIT
Maximum Junction-to-Ambient	RthJA	-	-	110
Case-to-Sink	RthCS	-	1.7	-		°C/W
Maximum Junction-to-Case (Drain)a	RthJC	-	-	5.0

Note

a. Mounting pad must cover heatsink surface area.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

	PARAMETER	SYMBOL	TEST CONDITIONS			MIN.	TYP.	MAX.	UNIT
	Static
	Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = - 250 μA			- 50	-	-	V
	Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = - 250 μA			- 2.0	-	- 4.0	V
	Gate-Source Leakage	IGSS		VGS = ± 20 V		-	-	± 500	nA
	Zero Gate Voltage Drain Current	IDSS	VDS = max. rating, VGS = 0 V			-	-	- 250	μA
			VDS = 0.8 x max. rating, VGS = 0 V, TJ = 125 °C			-	-	- 1000
	Drain-Source On-State Resistance	RDS(on)	VGS = - 10 V	ID = - 2.8 Ab		-	0.35	0.5
	Forward Transconductance	gfs	VDS - 50 V, IDS = - 2.8 A			1.1	1.7	-	S
	Dynamic
	Input Capacitance	Ciss		VGS = 0 V,		-	240	-
	Output Capacitance	Coss							pF
				VDS = - 25 V,		-	160	-
	Reverse Transfer Capacitance	Crss	f = 1.0 MHz, see fig. 9			-	30	-
	Total Gate Charge	Qg		ID = - 4.7 A, VDS = 0.8 x max.		-	6.1	9.1
	Gate-Source Charge	Qgs	VGS = - 10 V	rating, see fig. 16		-	2.0	3.0	nC
				(Independent operating
	Gate-Drain Charge	Qgd		temperature)		-	3.9	5.9
	Turn-On Delay Time	td(on)				-	6.1	9.2
	Rise Time	tr	VDD	= - 25 V, ID	= - 4.7 A,	-	47	71
	Turn-Off Delay Time	td(off)	Rg = 24 , RD = 5.6		, see fig. 15	-	13	20	ns
			(Independent operating temperature)
	Fall Time	tf				-	35	59
	Internal Drain Inductance	LD	Between lead,		D	-	4.5	-
			6 mm (0.25") from
									nH
			package and center of		G
	Internal Source Inductance	LS	die contact.			-	7.5	-
					S
	Drain-Source Body Diode Characteristics
	Continuous Source-Drain Diode Current	IS	MOSFET symbol		D	-	-	- 5.3
			showing the
									A
			integral reverse		G
	Pulsed Diode Forward Currenta	I				-	-	- 18
			p - n junction diode		S
		SM
	Body Diode Voltage	VSD	TJ = 25 °C, IS = - 5.3 A, VGS = 0 Vb			-	-	- 5.5	V
	Body Diode Reverse Recovery Time	trr	TJ = 25 °C, IF = - 4,7 A, dI/dt = 100 A/μsb			33	75	160	ns
	Body Diode Reverse Recovery Charge	Qrr				0.090	0.22	0.52	μC
	Forward Turn-On Time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).

b.Pulse width 300 μs; duty cycle 2 %.

S13-0167-Rev. D, 04-Feb-13	2	Document Number: 91378
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010

www.vishay.com	Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics		Fig. 4 - Maximum Safe Operating Area

Fig. 2 - Typical Transfer Characteristics	Fig. 5 - Typical Transconductance vs. Drain Current

Fig. 3 - Typical Saturation Characteristics

Fig. 6 - Typical Source-Drain Diode Forward Voltage

S13-0167-Rev. D, 04-Feb-13	3	Document Number: 91378
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000