Vishay IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 Data Sheet

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S

G

D

P-Channel MOSFET

DPAK

(TO-252)

IPAK

(TO-251)

G

D

S

S

D

G

D

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) - 50

R

()V

DS(on)

Q

(Max.) (nC) 9.1

g

Q

(nC) 3.0

gs

Q

(nC) 5.9

gd

Configuration Single

= - 10 V 0.50

GS

FEATURES

• Surface Mountable (Order as IRFR9010,
SiHFR9010)

• Straight Lead Option (Order as IRFU9010,
SiHFU9010)

• Repetitive Avalanche Ratings

• Dynamic dV/dt Rating

• Simple Drive Requirements

• Ease of Paralleling

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION

The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dV/dt capability.
The power MOSFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The DPAK
(TO-252) surface mount package brings the advantages of
power MOSFETs to high volume applications where PC
Board surface mounting is desirable. The surface mount
option IRFR9010, SiHFR9010 is provided on 16 mm tape.
The straight lead option IRFU9010, SiHFU9010 of the device
is called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.

ORDERING INFORMATION

Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFR9010-GE3 SiHFR9010TR-GE3

Lead (Pb)-free

IRFR9010PbF IRFR9010TRPbF
SiHFR9010-E3 SiHFR9010T-E3

Note

a. See device orientation.

a

a

a

SiHFR9010TRL-GE3aSiHFU9010-GE3
IRFR9010TRLPbF
SiHFR9010TL-E3

a

a

IRFU9010PbF
SiHFU9010-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at - 10 V

GS

C

= 100 °C - 3.3

C

DS

± 20

GS

I

D

IDM - 21
Linear Derating Factor 0.20 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. V

= - 25 V, starting TJ = 25 °C, L = 9.7 mH, Rg = 25 , peak IL = - 5.3 A.

DD

 - 5.3 A, dI/dt  - 80 A/μs, VDD  40 V, TJ  150 °C, suggested Rg = 24 .

c. I

SD

d. 0.063" (1.6 mm) from case.

S13-0167-Rev. D, 04-Feb-13

d

for 10 s 300

1

E

AS

I

AR

E

AR

D

dV/dt 5.8 V/ns

, T

J

stg

For technical questions, contact: [e-mail]

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

- 50

- 5.3

136 mJ

- 5.3 A

2.5 mJ
25 W

- 55 to + 150

Document Number: 91378

V

AT

°C

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010

D

S

G

S

D

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain)

a

thJA

thCS

R

thJC

- - 110

-1.7-

--5.0

Note

a. Mounting pad must cover heatsink surface area.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

DS(on)

fs

VDS = 0.8 x max. rating, VGS = 0 V, TJ = 125 °C

VGS = - 10 V ID = - 2.8 A

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

iss

-160-

oss

-30-

rss

g

V

-2.03.0

gs

-3.95.9

gd

d(on)

r

-1320

d(off)

-3559

f

D

S

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

TJ = 25 °C, IF = - 4,7 A, dI/dt = 100 A/μs

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width  300 μs; duty cycle  2 %.

VGS = 0 V, ID = - 250 μA - 50 - - V

VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V

= ± 20 V - - ± 500 nA

GS

VDS = max. rating, VGS = 0 V - - - 250

b

VDS  - 50 V, IDS = - 2.8 A 1.1 1.7 - S

VGS = 0 V,

V

= - 25 V,

DS

f = 1.0 MHz, see fig. 9

= - 4.7 A, VDS = 0.8 x max.

I

D

= - 10 V

GS

rating, see fig. 16

(Independent operating

temperature)

= - 25 V, ID = - 4.7 A,

V

DD

R

= 24 , RD = 5.6 , see fig. 15

g

(Independent operating temperature)

Between lead,
6 mm (0.25") from
package and center of
die contact.

MOSFET symbol
showing the

integral reverse
p - n junction diode

TJ = 25 °C, IS = - 5.3 A, VGS = 0 V

b

b

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Vishay Siliconix

°C/WCase-to-Sink R

- - - 1000

- 0.35 0.5 

-240-

-6.19.1

-6.19.2

-4771

-4.5-

-7.5-

--- 5.3

--- 18

--- 5.5V

33 75 160 ns

0.090 0.22 0.52 μC

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

S13-0167-Rev. D, 04-Feb-13

2

Document Number: 91378

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Transfer Characteristics

Fig. 4 - Maximum Safe Operating Area

Fig. 5 - Typical Transconductance vs. Drain Current

Fig. 3 - Typical Saturation Characteristics

S13-0167-Rev. D, 04-Feb-13

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3

Fig. 6 - Typical Source-Drain Diode Forward Voltage

Document Number: 91378

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IRFR9010, IRFU9010, SiHFR9010, SiHFU9010

Vishay Siliconix

Fig. 7 - Breakdown Voltage vs. Temperature

Fig. 8 - Normalized On-Resistance vs. Temperature

Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage

S13-0167-Rev. D, 04-Feb-13

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Document Number: 91378

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R

g

I

L

0.05 Ω

t

p

D.U.T.

L

V

DS

+

­V

DD

- 10 V

Var y tp to obtain
required I

L

I

AS

V

DS

V

DD

V

DS

t

p

I

L

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010

Vishay Siliconix

Fig. 11 - Typical On-Resistance vs. Drain Current

Fig. 12 - Maximum Drain Current vs. Case Temperature

Fig. 13a - Maximum Avalanche vs. Starting Junction

Temperature

Fig. 13b - Unclamped Inductive Test Circuit

Fig. 13c - Unclamped Inductive Waveforms

S13-0167-Rev. D, 04-Feb-13

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Document Number: 91378

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010

V

GS

10 %

90 %

V

DS

t

d(on)

t

r

t

d(off)

t

f

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

R

D

V

GS

R

g

D.U.T.

- 10 V

+

-

V

DS

V

DD

Q

GS

Q

GD

Q

G

V

G

Charge

- 10 V

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Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration

Vishay Siliconix

S13-0167-Rev. D, 04-Feb-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 15a - Switching Time Waveforms

Fig. 15b - Switching Time Test Circuit

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Fig. 16a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

50 kΩ

0.2 µF

12 V

0.3 µF

-

V

+

D.U.T.

V

GS

- 3 mA

I

G

Current sampling resistors

I

DS

D

Fig. 16b - Gate Charge Test Circuit

6

Document Number: 91378

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010

P.W.

Period

dI/dt

Diode recovery

dV/dt

Body diode forward drop

Body diode forward

current

Driver gate drive

Inductor current

D =

P.W.

Period

+

-

-

-

-

+

+

+

Peak Diode Recovery dV/dt Test Circuit

• dV/dt controlled by R

g

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

R

g

• Compliment N-Channel of D.U.T. for driver

V

DD

• I

SD

controlled by duty factor “D”

Note

Note

a. V

GS

= - 5 V for logic level and - 3 V drive devices

V

GS

= - 10 V

a

D.U.T. lSD waveform

D.U.T. V

DS

waveform

V

DD

Re-applied
voltage

Ripple ≤ 5 %

I

SD

Reverse
recovery
current

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Vishay Siliconix

Fig. 17 - For P-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91378

S13-0167-Rev. D, 04-Feb-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

.

7

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Document Number: 91378

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Package Information

Vishay Siliconix

TO-252AA Case Outline

E

b3

L3

A

C2

DIM. MIN. MAX. MIN. MAX.

MILLIMETERS INCHES

A 2.18 2.38 0.086 0.094

A1 - 0.127 - 0.005

b 0.64 0.88 0.025 0.035

D

H

b2 0.76 1.14 0.030 0.045

b3 4.95 5.46 0.195 0.215

C 0.46 0.61 0.018 0.024

C2 0.46 0.89 0.018 0.035

L4

L5

L

D 5.97 6.22 0.235 0.245

D1 4.10 - 0.161 -

E 6.35 6.73 0.250 0.265

b

e1

b2

e

C

A1

E1 4.32 - 0.170 -

H 9.40 10.41 0.370 0.410

e 2.28 BSC 0.090 BSC

e1 4.56 BSC 0.180 BSC

gage plane height (0.5 mm)

L 1.40 1.78 0.055 0.070

L3 0.89 1.27 0.035 0.050

D1

L4 - 1.02 - 0.040

L5 1.01 1.52 0.040 0.060

ECN: T16-0236-Rev. P, 16-May-16

E1

DWG: 5347

Notes

• Dimension L3 is for reference only.

Revision: 16-May-16

1

Document Number: 71197

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RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

0.224

(5.690)

Application Note 826

Vishay Siliconix

0.243
(6.180)

Return to Index

Return to Index

0.420
(10.668)

0.180

(4.572)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.087

0.090

0.055

(1.397)

(2.202)

(2.286)

APPLICATION NOTE

Document Number: 72594 www.vishay.com
Revision: 21-Jan-08 3

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Revision: 13-Jun-16

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Document Number: 91000