Vishay IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Data Sheet
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N-Channel MOSFET
G
D
S
DPAK
(TO-252)
IPAK
(TO-251)
G
D
S
S
D
G
D
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 500
R
()V
DS(on)
Q
(Max.) (nC) 24
g
Q
(nC) 6.5
gs
Q
(nC) 13
gd
Configuration Single
= 10 V 1.7
GS
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Effective C
Specified
oss
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and
Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
SiHFR430A-GE3 SiHFR430ATR-GE3
IRFR430APbF IRFR430ATRPbF
SiHFR430A-E3 SiHFR430AT-E3
a
SiHFR430ATRL-GE3aSiHFR430ATRR-GE3aSiHFU430A-GE3
a
IRFR430ATRLPbF
a
SiHFR430ATL-E3
a
IRFR430ATRRPbF
a
SiHFR430ATR-E3
a
a
IRFU430APbF
SiHFU430A-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 3.2
C
DS
± 30
GS
I
D
IDM 20
Linear Derating Factor 0.91 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)
b
a
a
= 25 °C P
c
d
C
for 10 s 300
E
AS
I
AR
E
AR
D
dV/dt 3.0 V/ns
, T
J
stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
SD
= 25 °C, L = 11 mH, Rg = 25 , IAS = 5.0 A (see fig. 12).
J
5.0 A, dI/dt 320 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
S12-0168-Rev. D, 04-Feb-13
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
500
5.0
130 mJ
5.0 A
11 mJ
110 W
- 55 to + 150
Document Number: 91276
V
AT
°C
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
S
D
G
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THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
thJA
R
thCS
R
thJC
-62
0.50 -
-1.1
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.60 - V/°C
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 3.0 A
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Effective Output Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
iss
-75-
oss
-4.5-
rss
oss
eff. VDS = 0 V to 400 V
oss
g
--6.5
gs
--13
gd
d(on)
r
-17-
d(off)
-16-
f
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 5.0 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
eff. is a fixed capacitance that gives the same charging time as C
oss
VGS = 0 V, ID = 250 μA 500 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.5 V
= ± 30 V - - ± 100 nA
GS
VDS = 500 V, VGS = 0 V - - 25
V
= 400 V, VGS = 0 V, TJ = 125 °C - - 250
DS
b
VDS = 50 V, ID = 3.0 A 2.3 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 1.0 V, f = 1.0 MHz - 750 -
V
DS
V
= 10 V
GS
V
= 10 V
GS
V
DD
R
= 15 , RD = 50 , see fig. 10
g
TJ = 25 °C, IS = 5.0 A, VGS = 0 V
= 400 V, f = 1.0 MHz - 25 -
DS
c
= 5.0 A, VDS = 400 V,
I
D
see fig. 6 and 13
= 250 V, ID = 5.0 A,
b
b
b
b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising from 0 to 80 % VDS.
oss
Vishay Siliconix
°C/W
--1.7
- 490 -
-51-
--24
-8.7-
-27-
--5.0
--20
--1.5V
- 410 620 ns
-1.42.1μC
μA
pFOutput Capacitance C
pFV
nC Gate-Source Charge Q
ns
A
S12-0168-Rev. D, 04-Feb-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
2
Document Number: 91276
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20μs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20μs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate-to-Source Voltage (V)
0.01
0.10
1.00
10.00
100.00
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
TJ= 25°C
TJ= 150°C
VDS= 100V
20μs PULSE WIDTH
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
S12-0168-Rev. D, 04-Feb-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Transfer Characteristics
3.0
I =
D
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Fig. 4 - Normalized On-Resistance vs. Temperature
3
For technical questions, contact: hvm@vishay.com
5.0A
T , Junction Temperature ( C)
J
Document Number: 91276
V =
GS
°
10V
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0 4 8 12 16 20
0
2
5
7
10
12
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
5.0A
V = 100V
DS
V = 250V
DS
V = 400V
DS
10 100 1000 10000
VDS, Drain-toSource Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
Vishay Siliconix
10000
1000
)
F
p
(
e
c
n
a
t
i
100
c
a
p
a
C
,
C
10
V
= 0V, f = 1 MHZ
GS
C
= C
iss
gs
C
= C
rss
gd
C
= C
ds
+ C
oss
Ciss
Coss
+ Cgd, C
gd
SHORTED
ds
Crss
1
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
100
10
°
°
T = 150 C
J
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.5 0.8 1.1 1.4
V ,Source-to-Drain Voltage (V)
SD
T = 25 C
J
V = 0 V
GS
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S12-0168-Rev. D, 04-Feb-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 8 - Maximum Safe Operating Area
4
For technical questions, contact: hvm@vishay.com
Document Number: 91276
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