VISHAY BZX55B Technical data

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Silicon Epitaxial Planar Z–Diodes

Features

D

Very sharp reverse characteristic

D

Low reverse current level

D

Low noise

D

Very high stability

D

Available with tighter tolerances

–tolerance ± 2%

D

V

Z

BZX55B...

Vishay Telefunken

Applications

Voltage stabilization

Absolute Maximum Ratings

Tj = 25_C

Parameter Test Conditions Type Symbol Value Unit
Power dissipation l=4mm, TL=25°C P
Z–current I
Junction temperature T
Storage temperature range T

Maximum Thermal Resistance

Tj = 25_C

Parameter Test Conditions Symbol Value Unit
Junction ambient l=4mm, TL=constant R

thJA

Electrical Characteristics

Tj = 25_C

Parameter Test Conditions Type Symbol Min Typ Max Unit

Forward voltage IF=100mA V

F

Z

stg

V

j

94 9367

500 mW

PV/V

Z

175

–65...+175

300 K/W

1.5 V

mA

°

C

°

C

Document Number 85604
Rev. 3, 01-Apr-99 1 (6)

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BZX55B...

Vishay Telefunken

Type V

BZX55B...

ZnomIZT

V mA V

for VZT and r

zjTrzjk

at IZK IR and IR at V

W W

mA

m

A

2)

m

A

R

V %/K

TK

2V7 2.7 5 2.64 to 2.76 < 85 < 600 1 < 10 < 50 1 –0.09 to –0.06
3V0 3.0 5 2.94 to 3.06 < 90 < 600 1 < 4 < 40 1 –0.08 to –0.05
3V3 3.3 5 3.24 to 3.36 < 90 < 600 1 < 2 < 40 1 –0.08 to –0.05
3V6 3.6 5 3.52 to 3.68 < 90 < 600 1 < 2 < 40 1 –0.08 to –0.05
3V9 3.9 5 3.82 to 3.98 < 90 < 600 1 < 2 < 40 1 –0.08 to –0.05
4V3 4.3 5 4.22 to 4.38 < 90 < 600 1 < 1 < 20 1 –0.06 to –0.03
4V7 4.7 5 4.60 to 4.80 < 80 < 600 1 < 0.5 < 10 1 –0.05 to +0.02
5V1 5.1 5 5.00 to 5.20 < 60 < 550 1 < 0.1 < 2 1 –0.02 to +0.02
5V6 5.6 5 5.48 to 5.72 < 40 < 450 1 < 0.1 < 2 1 –0.05 to +0.05
6V2 6.2 5 6.08 to 6.32 < 10 < 200 1 < 0.1 < 2 2 0.03 to 0.06
6V8 6.8 5 6.66 to 6.94 < 8 < 150 1 < 0.1 < 2 3 0.03 to 0.07
7V5 7.5 5 7.35 to 7.65 < 7 < 50 1 < 0.1 < 2 5 0.03 to 0.07
8V2 8.2 5 8.04 to 8.36 < 7 < 50 1 < 0.1 < 2 6.2 0.03 to 0.08
9V1 9.1 5 8.92 to 9.28 < 10 < 50 1 < 0.1 < 2 6.8 0.03 to 0.09

10 10 5 9.80 to 10.20 < 15 < 70 1 < 0.1 < 2 7.5 0.03 to 0.1
11 11 5 10.78 to 11.22 < 20 < 70 1 < 0.1 < 2 8.2 0.03 to 0.11
12 12 5 11.76 to 12.24 < 20 < 90 1 < 0.1 < 2 9.1 0.03 to 0.11
13 13 5 12.74 to 13.26 < 26 < 110 1 < 0.1 < 2 10 0.03 to 0.11
15 15 5 14.70 to 15.30 < 30 < 110 1 < 0.1 < 2 11 0.03 to 0.1 1
16 16 5 15.70 to 16.30 < 40 < 170 1 < 0.1 < 2 12 0.03 to 0.11
18 18 5 17.64 to 18.36 < 50 < 170 1 < 0.1 < 2 13 0.03 to 0.11
20 20 5 19.60 to 20.40 < 55 < 220 1 < 0.1 < 2 15 0.03 to 0.11
22 22 5 21.55 to 22.45 < 55 < 220 1 < 0.1 < 2 16 0.04 to 0.12
24 24 5 23.5 to 24.5 < 80 < 220 1 < 0.1 < 2 18 0.04 to 0,12
27 27 5 26.4 to 27.6 < 80 < 220 1 < 0.1 < 2 20 0.04 to 0.12
30 30 5 29.4 to 30.6 < 80 < 220 1 < 0.1 < 2 22 0.04 to 0.12
33 33 5 32.4 to 33.6 < 80 < 220 1 < 0.1 < 2 24 0.04 to 0.12
36 36 5 35.3 to 36.7 < 80 < 220 1 < 0.1 < 2 27 0.04 to 0.12
39 39 2.5 38.2 to 39.8 < 90 < 500 0.5 < 0.1 < 5 30 0.04 to 0.12
43 43 2.5 42.1 to 43.9 < 90 < 600 0.5 < 0.1 < 5 33 0.04 to 0.12
47 47 2.5 46.1 to 47.9 < 110 < 700 0.5 < 0.1 < 5 36 0.04 to 0.12
51 51 2.5 50.0 to 52.0 < 125 < 700 0.5 < 0.1 < 10 39 0.04 to 0.12
56 56 2.5 54.9 to 57.1 < 135 < 1000 0.5 < 0.1 < 10 43 0.04 to 0.12
62 62 2.5 60.8 to 63.2 < 150 < 1000 0.5 < 0.1 < 10 47 0.04 to 0.12
68 68 2.5 66.6 to 69.4 < 200 < 1000 0.5 < 0.1 < 10 51 0.04 to 0.12
75 75 2.5 73.5 to 76.5 < 250 < 1500 0.5 < 0.1 < 10 56 0.04 to 0.12

VZ

www.vishay.de • FaxBack [phone] Document Number 85604

Rev. 3, 01-Apr-992 (6)

Characteristics (Tj = 25_C unless otherwise specified)

)

BZX55B...

Vishay Telefunken

500

400

300

ll

200

100

TL=constant

0

thJA

0 5 10 15

R – Therm. Resist. Junction / Ambient ( K/W )

95 9611

l – Lead Length ( mm )

Figure 1. Thermal Resistance vs. Lead Length

600

500

400

300

200

100

tot

P – Total Power Dissipation ( mW )

0

0 40 80 120 160

T

95 9602

– Ambient Temperature ( °C )

amb

Figure 2. Total Power Dissipation vs.

Ambient Temperature

1000

20

200

1.3

1.2

1.1

1.0

Ztn

0.9

V – Relative Voltage Change

V

Ztn=VZt/VZ

(25°C)

TKVZ=10 10–4/K

–4

8 10

–4

6 10
4 10–4/K

–4

2 10

0

–4

–2 10

–4 10–4/K

/K
/K

/K

/K

0.8
240

95 9599

–60 0 60 120 180

Tj – Junction Temperature ( °C )

Figure 4. Typical Change of Working Voltage vs.

Junction Temperature

15

–4

Z

10

5

IZ=5mA

0

VZ

–5

TK – Temperature Coefficient of V ( 10 /K

95 9600

0102030

VZ – Z-Voltage ( V )

40

50

Figure 5. Temperature Coefficient of Vz vs. Z–Voltage

200

Tj=25°C

100

150

VR=2V

Tj=25°C

IZ=5mA

100

10

Z

V – Voltage Change ( mV )

D

95 9598

1

0 5 10 15 20

VZ – Z-Voltage ( V )

25

Figure 3. Typical Change of Working Voltage

under Operating Conditions at T

Document Number 85604

amb

=25°C

50

D

C – Diode Capacitance ( pF )

0

0 5 10 15

95 9601

VZ – Z-Voltage ( V )

Figure 6. Diode Capacitance vs. Z–Voltage

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20

25

Rev. 3, 01-Apr-99 3 (6)