VISHAY BZT55 Technical data

Small Signal Zener Diodes
• Very sharp reverse characteristic
• Low reverse current level
• Available with tighter tolerances
• Very high stability
•Low noise
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
• Voltage stabilization
Mechanical Data
Case: QuadroMELF Glass case SOD80 Weight: approx. 34 mg Packaging Codes/Options:
GS08 / 2.5 k per 7" reel 12.5 k/box GS18 / 10 k per 13" reel 10 k/box
e2
BZT55-Series
Vishay Semiconductors
9612009
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Power dissipation R
Z-current I
Junction temperature T
Storage temperature range T
300 K/W P
thJA
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Junction to ambient air on PC board
50 mm x 50 mm x 1.6 mm
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
= 200 mA V
F
F
V
Z
j
stg
R
thJA
500 mW
PV/V
Z
175 °C
- 65 to + 175 °C
500 K/W
1.5 V
mA
Document Number 85637
Rev. 1.5, 10-Mar-06
www.vishay.com
1
BZT55-Series
Vishay Semiconductors
Electrical Characteristics
BZT55C..
Partnumber
BZT55C2V4 2.28 2.56 < 85 < 600 5 - 0.09 - 0.06 1 < 50 < 100 1
BZT55C2V7 2.5 2.9 < 85 < 600 5 - 0.09 - 0.06 1 < 10 < 50 1
BZT55C3V0 2.8 3.2 < 90 < 600 5 - 0.08 - 0.05 1 < 4 < 40 1
BZT55C3V3 3.1 3.5 < 90 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1
BZT55C3V6 3.4 3.8 < 90 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1
BZT55C3V9 3.7 4.1 < 90 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1
BZT55C4V3 4 4.6 < 90 < 600 5 - 0.06 - 0.03 1 < 1 < 20 1
BZT55C4V7 4.4 5 < 80 < 600 5 - 0.05 0.02 1 < 0.5 < 10 1
BZT55C5V1 4.8 5.4 < 60 < 550 5 - 0.02 0.02 1 < 0.1 < 2 1
BZT55C5V6 5.2 6 < 40 < 450 5 - 0.05 0.05 1 < 0.1 < 2 1
BZT55C6V2 5.8 6.6 < 10 < 200 5 0.03 0.06 1 < 0.1 < 2 2
BZT55C6V8 6.4 7.2 < 8 < 150 5 0.03 0.07 1 < 0.1 < 2 3
BZT55C7V5 7 7.9 < 7 < 50 5 0.03 0.07 1 < 0.1 < 2 5
BZT55C8V2 7.7 8.7 < 7 < 50 5 0.03 0.08 1 < 0.1 < 2 6.2
BZT55C9V1 * 8.5 9.6 < 10 < 50 5 0.03 0.09 1 < 0.1 < 2 6.8
BZT55C10 * 9.4 10.6 < 15 < 70 5 0.03 0.1 1 < 0.1 < 2 7.5
BZT55C11 * 10.4 11.6 < 20 < 70 5 0.03 0.11 1 < 0.1 < 2 8.2
BZT55C12 * 11.4 12.7 < 20 < 90 5 0.03 0.11 1 < 0.1 < 2 9.1
BZT55C13 * 12.4 14.1 < 26 < 110 5 0.03 0.11 1 < 0.1 < 2 10
BZT55C15 * 13.8 15.6 < 30 < 110 5 0.03 0.11 1 < 0.1 < 2 11
BZT55C16 * 15.3 17.1 < 40 < 170 5 0.03 0.11 1 < 0.1 < 2 12
BZT55C18 * 16.8 19.1 < 50 < 170 5 0.03 0.11 1 < 0.1 < 2 13
BZT55C20 * 18.8 21.2 < 55 < 220 5 0.03 0.11 1 < 0.1 < 2 15
BZT55C22 * 20.8 23.3 < 55 < 220 5 0.04 0.12 1 < 0.1 < 2 16
BZT55C24 * 22.8 25.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 18
BZT55C27 * 25.1 28.9 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 20
BZT55C30 * 28 32 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 22
BZT55C33 * 31 35 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 24
BZT55C36 * 34 38 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 27
BZT55C39 * 37 41 < 90 < 500 2.5 0.04 0.12 0.5 < 0.1 < 5 30
BZT55C43 * 40 46 < 90 < 600 2.5 0.04 0.12 0.5 < 0.1 < 5 33
BZT55C47 * 44 50 < 110 < 700 2.5 0.04 0.12 0.5 < 0.1 < 5 36
BZT55C51 * 48 54 < 125 < 700 2.5 0.04 0.12 0.5 < 0.1 < 10 39
BZT55C56 * 52 60 < 135 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 43
BZT55C62 * 58 66 < 150 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 47
BZT55C68 * 64 72 < 200 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 51
BZT55C75 * 70 79 < 250 < 1500 2.5 0.04 0.12 0.5 < 0.1 < 10 56
1)
tp 10 ms, T/tp > 1000
*)
Additionnal measurement of Voltage group 9V1 to 75 at 95 % V
Zener Voltage
VZ at I
min max min max
1)
ZT
V Ω mA %/K mA µA V
Dynamic
Resistance
rzj at
,
I
ZT
f = 1 kHz
Te s t
Current
I
ZT
35 nA at Tj 25 °C
zmin
Temperature
Coefficient
TK
VZ
Te s t
Current
I
ZK
Reverse Leakage Current
IR at T
amb
= 25°C
IR at
T
amb
= 150 °C
at V
R
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2
Document Number 85637
Rev. 1.5, 10-Mar-06
BZT55-Series
Vishay Semiconductors
Electrical Characteristics
BZT55B..
Partnumber
BZT55B2V4 2.35 2.45 < 85 < 600 5 - 0.09 - 0.06 1 < 50 < 100 1
BZT55B2V7 2.64 2.76 < 85 < 600 5 - 0.09 - 0.06 1 < 10 < 50 1
BZT55B3V0 2.94 3.06 < 90 < 600 5 - 0.08 - 0.05 1 < 4 < 40 1
BZT55B3V3 3.24 3.36 < 90 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1
BZT55B3V6 3.52 3.68 < 90 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1
BZT55B3V9 3.82 3.98 < 90 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1
BZT55B4V3 4.22 4.38 < 90 < 600 5 - 0.06 - 0.03 1 < 1 < 20 1
BZT55B4V7 4.6 4.8 < 80 < 600 5 - 0.05 0.02 1 < 0.5 < 10 1
BZT55B5V1 5 5.2 < 60 < 550 5 - 0.02 0.02 1 < 0.1 < 2 1
BZT55B5V6 5.48 5.72 < 40 < 450 5 - 0.05 0.05 1 < 0.1 < 2 1
BZT55B6V2 6.08 6.32 < 10 < 200 5 0.03 0.06 1 < 0.1 < 2 2
BZT55B6V8 6.66 6.94 < 8 < 150 5 0.03 0.07 1 < 0.1 < 2 3
BZT55B7V5 7.35 7.65 < 7 < 50 5 0.03 0.07 1 < 0.1 < 2 5
BZT55B8V2 8.04 8.36 < 7 < 50 5 0.03 0.08 1 < 0.1 < 2 6.2
BZT55B9V1 * 8.92 9.28 < 10 < 50 5 0.03 0.09 1 < 0.1 < 2 6.8
BZT55B10 * 9.8 10.2 < 15 < 70 5 0.03 0.1 1 < 0.1 < 2 7.5
BZT55B11 * 10.78 11.22 < 20 < 70 5 0.03 0.11 1 < 0.1 < 2 8.2
BZT55B12 * 11.76 12.24 < 20 < 90 5 0.03 0.11 1 < 0.1 < 2 9.1
BZT55B13 * 12.74 13.26 < 26 < 110 5 0.03 0.11 1 < 0.1 < 2 10
BZT55B15 * 14.7 15.3 < 30 < 110 5 0.03 0.11 1 < 0.1 < 2 11
BZT55B16 * 15.7 16.3 < 40 < 170 5 0.03 0.11 1 < 0.1 < 2 12
BZT55B18 * 17.64 18.36 < 50 < 170 5 0.03 0.11 1 < 0.1 < 2 13
BZT55B20 * 19.6 20.4 < 55 < 220 5 0.03 0.11 1 < 0.1 < 2 15
BZT55B22 * 21.55 22.45 < 55 < 220 5 0.04 0.12 1 < 0.1 < 2 16
BZT55B24 * 23.5 24.5 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 18
BZT55B27 * 26.4 27.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 20
BZT55B30 * 29.4 30.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 22
BZT55B33 * 32.4 33.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 24
BZT55B36 * 35.3 36.7 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 27
BZT55B39 * 38.2 39.8 < 90 < 500 2.5 0.04 0.12 1 < 0.1 < 5 30
BZT55B43 * 42.1 43.9 < 90 < 600 2.5 0.04 0.12 0.5 < 0.1 < 5 33
BZT55B47 * 46.1 47.9 < 110 < 700 2.5 0.04 0.12 0.5 < 0.1 < 5 36
BZT55B51 * 50 52 < 125 < 700 2.5 0.04 0.12 0.5 < 0.1 < 10 39
BZT55B56 * 54.9 57.1 < 135 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 43
BZT55B62 * 60.8 63.2 < 150 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 47
BZT55B68 * 66.6 69.4 < 200 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 51
BZT55B75 * 73.5 76.5 < 250 < 1500 2.5 0.04 0.12 0.5 < 0.1 < 10 56
1)
tp 10 ms, T/tp > 1000
*)
Additionnal measurement of Voltage group 9V1 to 75 at 95 % V
Zener Voltage
VZ at I
min max min max
1)
ZT
V Ω mA %/K mA µA V
Dynamic
Resistance
rzj at
,
I
ZT
f = 1 kHz
Te st
Current
I
ZT
35 nA at Tj 25 °C
zmin
Temperature
Coefficient of
Zener Voltage
TK
VZ
Te s t
Current
I
ZK
Reverse Leakage Current
IR at T
amb
= 25°C
IR at
T
amb
= 150 °C
at V
R
Document Number 85637
Rev. 1.5, 10-Mar-06
www.vishay.com
3
BZT55-Series
Vishay Semiconductors
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
600
500
400
/K)
-4
(10
15
Z
10
300
200
100
- Total Power Dissipation (mW)
tot
0
P
0 120 160
95 9602
T
amb
80
40
- Ambient Temperature (°C)
200
Figure 1. Total Power Dissipation vs. Ambient Temperature
1000
Tj = 25 °C
100
= 5 mA
I
Z
10
- Voltage Change (mV)
Z
V
95 9598
1
0
10 15 20
5
VZ - Z-Voltage (V)
25
Figure 2. Typical Change of Working Voltage under Operating
Conditions at T
amb
=25°C
5
IZ = 5 mA
0
- 5
- Temperature Coefficient of V
TK
VZ
0
95 9600
10 20
V
- Z-Voltage (V)
Z
30
40
50
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
200
150
VR = 2 V
100
Tj = 25 °C
50
- Diode Capacitance (pF)
D
C
0
20
25
95 9601
5
10 15
0
VZ - Z-Voltage (V)
Figure 5. Diode Capacitance vs. Z-Voltage
1.3
V
= VZt/VZ (25 °C)
Ztn
1.2
1.1
1.0
0.9
- Relative Voltage Change
Ztn
V
0.8
- 60 60 120 180
95 9599
TKVZ = 10 x 10-4/K
8 x 10 6 x 10
4 x 10
2 x 10
0
- 2 x 10-4/K
- 4 x 10-4/K
0
Tj - Junction Temperature (°C)
-4
-4
-4
-4
240
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
www.vishay.com
4
100
10
/K
/K
/K
/K
1
Tj = 25 °C
0.1
0.01
- Forward Current (mA)
F
I
0.001 0 0.2 0.4 0.6 0.8
95 9605
VF - Forward Voltage (V)
1.0
Figure 6. Forward Current vs. Forward Voltage
Document Number 85637
Rev. 1.5, 10-Mar-06
BZT55-Series
Vishay Semiconductors
100
80
60
40
- Z-Current (mA)
Z
I
20
0
046
95 9604
VZ - Z-Voltage (V)
Figure 7. Z-Current vs. Z-Voltage
50
40
30
20
- Z-Current (mA)
Z
I
10
P
8
P
tot
T
amb
= 500 mW
tot
= 25 °C
T
amb
12
= 500 mW
= 25 °C
20
1000
(Ω)
IZ = 1 mA
100
5 mA
10 mA
10
- Differential Z-Resistance
Z
1
r
0 5 10 15 20
95 9606
VZ - Z-Voltage (V)
Tj = 25 °C
25
Figure 9. Differential Z-Resistance vs. Z-Voltage
0
15 20 25 30
95 9607
VZ - Z-Voltage (V)
Figure 8. Z-Current vs. Z-Voltage
1000
tP/T = 0.5
1
10
tP/T = 0.2
tP/T = 0.1
tP/T = 0.05
-1
- Thermal Resistance for Pulse Cond. (KW) Z
100
10
thp
95 9603
tP/T = 0.02
10
35
Single Pulse
tP/T = 0.01
0
10
1
tP - Pulse Length (ms)
Figure 10. Thermal Response
iZM = (- VZ + (V
2
+ 4rzj x T/Z
Z
10
R
T = T
2
thJA
= 300 K/W
- T
jmax
1/2
)
)/(2rzj)
thp
amb
Document Number 85637
Rev. 1.5, 10-Mar-06
www.vishay.com
5
BZT55-Series
Vishay Semiconductors
Package Dimensions in mm (Inches)
12071
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6
Document Number 85637
Rev. 1.5, 10-Mar-06
BZT55-Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85637
Rev. 1.5, 10-Mar-06
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com Revision: 08-Apr-05 1
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