VISHAY BZT03D Technical data

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BZT03D...

Vishay Telefunken

Silicon Z–Diodes and Transient Voltage Suppressors

Features

D

Glass passivated junction

D

Hermetically sealed package

D

Clamping time in picoseconds

Applications

Medium power voltage regulators and
medium power transient suppression circuits

94 9539

Absolute Maximum Ratings

Tj = 25_C

Parameter Test Conditions Type Symbol Value Unit

Power dissipation l=10mm, TL=25°C P

T

=25°C P

amb

Repetitive peak reverse power dissipation P
Non repetitive peak surge power dissipation tp=100ms, Tj=25°C P
Junction temperature T
Storage temperature range T

V

V
ZRM
ZSM

j

stg

3.25 W

1.3 W
10 W

600 W
175

–65...+175°C

Maximum Thermal Resistance

Tj = 25_C

Parameter Test Conditions Symbol Value Unit

Junction ambient l=10mm, TL=constant R

on PC board with spacing 25mm R

thJA
thJA

46 K/W

100 K/W

Electrical Characteristics

Tj = 25_C

Parameter Test Conditions Type Symbol Min Typ Max Unit

Forward voltage IF=0.5A V

F

°

1.2 V

C

Document Number 85600
Rev. 2, 01-Apr-99 1 (5)

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BZT03D...

Vishay Telefunken

Type V

BZT03D... V

Min. Typ. Max. Typ. Max. Min. Max. Max.
6V2 5.6 6.2 6.8 1 2 0 0.07 100 1500 4.4
6V8 6.1 6.8 7.5 1 2 0 0.07 100 1000 4.8
7V5 6.75 7.5 8.25 1 2 0 0.07 100 750 5.3
8V2 7.4 8.2 9.0 1 2 0.03 0.08 100 600 5.9
9V1 8.2 9.1 10.0 2 4 0.03 0.08 50 20 6.5

10 9.0 10 11.0 2 4 0.05 0.09 50 10 7.1
11 9.9 11 12.1 4 7 0.05 0.10 50 4 7.9
12 10.8 12 13.2 4 7 0.05 0.10 50 3 8.6
13 11.7 13 14.3 5 10 0.05 0.10 50 2 9.3
15 13.5 15 16.5 5 10 0.05 0.10 50 1 10.6
16 14.4 16 17.6 6 15 0.06 0.11 25 1 11.6
18 16.2 18 19.8 6 15 0.06 0.11 25 1 12.6
20 18.0 20 22.0 6 15 0.06 0.11 25 1 14.4
22 29.8 22 24.2 6 15 0.06 0.11 25 1 15.8
24 21.6 24 26.4 7 15 0.06 0.11 25 1 17.2
27 24.3 27 29.7 7 15 0.06 0.11 25 1 19.4
30 27 30 33 8 15 0.06 0.11 25 1 21.5
33 29.7 33 36.3 8 15 0.06 0.11 25 1 23.5
36 32.4 36 39.6 21 40 0.06 0.11 10 1 25.8
39 35.1 39 42.9 21 40 0.06 0.11 10 1 28
43 38.7 43 47.3 24 45 0.07 0.12 10 1 31
47 42.3 47 51.7 24 45 0.07 0.12 10 1 33.5
51 45.9 51 56.1 25 60 0.07 0.12 10 1 36.5
56 50.4 56 61.6 25 60 0.07 0.12 10 1 40
62 55.8 62 68.2 25 80 0.08 0.13 10 1 44.5
68 61.2 68 74.8 25 80 0.08 0.13 10 1 49
75 67.5 75 82.5 30 100 0.08 0.13 10 1 54
82 73.8 82 90.2 30 100 0.08 0.13 10 1 59

91 81.9 91 100 60 200 0.09 0.13 5 1 65
100 90 100 110 60 200 0.09 0.13 5 1 71
110 99 110 121 80 250 0.09 0.13 5 1 79
120 108 120 132 80 250 0.09 0.13 5 1 86
130 117 130 143 110 300 0.09 0.13 5 1 93
150 135 150 165 130 300 0.09 0.13 5 1 106
160 144 160 176 150 350 0.09 0.13 5 1 116
180 162 180 198 180 400 0.09 0.13 5 1 126
200 180 200 220 200 500 0.09 0.13 5 1 144
220 198 220 242 350 750 0.09 0.13 2 1 158
240 216 240 264 400 850 0.09 0.13 2 1 172
270 243 270 297 450 1000 0.09 0.13 2 1 194

Z

rzj and TKVZ at I

W

%/K mA

Z

IR at V

m

A

R

www.vishay.de • FaxBack [phone] Document Number 85600

Rev. 2, 01-Apr-992 (5)

BZT03D...

Vishay Telefunken

Type Clamping at Stand–off at

V

BZT03D... V A

6V2 9.5 34.0 3000 4.8
6V8 10.5 31.0 2000 5.3
7V5 11.6 26.5 1500 5.9
8V2 12.6 24.4 1200 6.5
9V1 13.7 22.7 50 7.1

10 15.2 20.3 20 7.9
11 16.2 19.1 5 8.6
12 17.5 17.7 5 9.3
13 19.1 15.9 5 10.6
15 21.8 14.4 5 11.6
16 23.4 13.1 5 12.6
18 26.3 11.7 5 14.4
20 29.2 10.6 5 15.8
22 31.9 9.7 5 17.2
24 34.6 8.9 5 19.4
27 39 7.9 5 21.5
30 43.5 7.1 5 23.5
33 47.5 6.5 5 25.8
36 51.5 6.0 5 28
39 56 5.5 5 31
43 62 4.9 5 33.5
47 67.5 4.6 5 36.5
51 73 4.2 5 40
56 81 3.8 5 44.5
62 89 3.5 5 49
68 97 3.2 5 54
75 107 2.9 5 59
82 117 2.6 5 65
91 130 2.4 5 71

100 143 2.2 5 79

110 157 2.0 5 86
120 172 1.8 5 93
130 187 1.6 5 106
150 213 1.5 5 116
160 229 1.3 5 126
180 256 1.2 5 144
200 284 1.1 5 158
220 314 1.0 5 172
240 364 0.9 5 194
270 388 0.8 5 215

1)

(CL)R

I

RSM

I

R

m

A V

Max. Max.

VR

2)

1)

10/1000 exp. falling pulse tp = 1000 ms down to 50%

Document Number 85600
Rev. 2, 01-Apr-99 3 (5)

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BZT03D...

Vishay Telefunken

Characteristics (Tj = 25_C unless otherwise specified)

50 3

25

7

2

Figure 1. Epoxy glass hard tissue, board

thickness 1.5 mm, R

4

l=10mm

3

15mm

2

thJA

ll

TL=constant

x

100 K/W

3.0

2.5

2.0
Tj=25°C

1.5

50

1.0

F

I – Forward Current ( A )

0.5

94 9086a

94 9585

0

0 0.5 1.0 1.5

VF – Forward Voltage ( V )

2.0

Figure 3. Forward Current vs. Forward Voltage

10000

Tj=25°C

1000

20mm

1

tot

P – Total Power Dissipation ( W )

94 9584

0

0

T

see Fig.1

40 80 120 160

– Ambient Temperature ( °C )

amb

Figure 2. Total Power Dissipation vs.

Ambient Temperature

Dimensions in mm

Sintered Glass Case

SOD 57
Weight max. 0.5g

200

Cathode Identification

Dissipation ( W )

100

ZSM

P – Non-Repetitive Surge Power

10

0.01 0.1 1 10

94 9586

tp – Pulse Length ( ms )

100

Figure 4. Non Repetitive Surge Power Dissipation vs.

Pulse Length

∅ 3.6 max.

technical drawings
according to DIN
specifications

94 9538

∅ 0.82 max.

26 min. 26 min.

www.vishay.de • FaxBack [phone] Document Number 85600

4.2 max.

Rev. 2, 01-Apr-994 (5)

BZT03D...

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

Document Number 85600
Rev. 2, 01-Apr-99 5 (5)

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