Zener Diodes with Surge Current Specification
Features
• Glass passivated junction
• Hermetically sealed package
• Clamping time in picoseconds
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
e2
BZT03-Series
Vishay Semiconductors
Applications
Medium power voltage regulators and medium power
transient suppression circuits
Mechanical Data
Case: SOD-57 Sintered glass case
Weight: approx. 369 mg
Packaging Codes/Options:
TAP / 5 k Ammopack (52 mm tape) / 25 k/box
TR / 5 k 10" reel
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Power dissipation l = 10 mm, T
T
= 25 °C P
amb
Repetitive peak reverse power
dissipation
Non repetitive peak surge power
dissipation
Junction temperature T
Storage temperature range T
= 100 µs, Tj = 25 °C P
t
p
= 25 °C P
L
P
V
V
ZRM
ZSM
stg
949539
3.25 W
1.3 W
10 W
600 W
j
175 °C
- 65 to + 175 °C
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Para meter Test condition Symbol Val ue Unit
Junction ambient l = 10 mm, T
on PC board with spacing 25 mm R
= constant R
L
thJA
thJA
46 K/W
100 K/W
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Document Number 85599
Rev. 1.4, 13-Jul-05
= 0.5 A V
F
F
1.2 V
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1
BZT03-Series
Vishay Semiconductors
Electrical Characteristics
BZT03C...
Partnumber Zener Voltage Range Dynamic
Resistance
VZ @ I
ZT
V Ω mA %/K µA V V A µA V
min typ max typ max min max max max max
BZT03C6V2 5.8 6.2 6.6 1 2 100 0 0.07 1500 4.7 9.3 34.0 3000 5.1
BZT03C6V8 6.4 6.8 7.2 1 2 100 0 0.07 1000 5.1 10.2 31.0 2000 5.6
BZT03C7V5 7 7.5 7.9 1 2 100 0 0.07 750 5.6 11.3 26.5 1500 6.2
BZT03C8V2 7.7 8.2 8.7 1 2 100 0.03 0.08 600 6.2 12.3 24.4 1200 6.8
BZT03C9V1 8.5 9.1 9.6 2 4 50 0.03 0.08 20 6.8 13.3 22.7 50 7.5
BZT03C10 9.4 10 10.6 2 4 50 0.05 0.09 10 7.5 14.8 20.3 20 8.2
BZT03C11 10.4 11 11.6 4 7 50 0.05 0.1 4 8.2 15.7 19.1 5 9.1
BZT03C12 11.4 12 12.7 4 7 50 0.05 0.1 3 9.1 17.0 17.7 5 10
BZT03C13 12.4 13 14.1 5 10 50 0.05 0.1 2 10 18.9 15.9 5 11
BZT03C15 13.8 15 15.6 5 10 50 0.05 0.1 1 11 20.9 14.4 5 12
BZT03C16 15.3 16 17.1 6 15 25 0.06 0.11 1 12 22.9 13.1 5 13
BZT03C18 16.8 18 19.1 6 15 25 0.06 0.11 1 13 25.6 11.7 5 15
BZT03C20 18.8 20 21.2 6 15 25 0.06 0.11 1 15 28.4 10.6 5 16
BZT03C22 20.8 22 23.3 6 15 25 0.06 0.11 1 16 31.0 9.7 5 18
BZT03C24 22.8 24 25.6 7 15 25 0.06 0.11 1 18 33.8 8.9 5 20
BZT03C27 25.1 27 28.9 7 15 25 0.06 0.11 1 20 38.1 7.9 5 22
BZT03C30 28 30 32 8 15 25 0.06 0.11 1 22 42.2 7.1 5 24
BZT03C33 31 33 35 8 15 25 0.06 0.11 1 24 46.2 6.5 5 27
BZT03C36 34 36 38 21 40 10 0.06 0.11 1 27 50.1 6.0 5 30
BZT03C39 37 39 41 21 40 10 0.06 0.11 1 30 54.1 5.5 5 33
BZT03C43 40 43 46 24 45 10 0.07 0.12 1 33 60.7 4.9 5 36
BZT03C47 44 47 50 24 45 10 0.07 0.12 1 36 65.5 4.6 5 39
BZT03C51 48 51 54 25 60 10 0.07 0.12 1 39 70.8 4.2 5 43
BZT03C56 52 56 60 25 60 10 0.07 0.12 1 43 78.6 3.8 5 47
BZT03C62 58 62 66 25 80 10 0.08 0.13 1 47 86.5 3.5 5 51
BZT03C68 64 68 72 25 80 10 0.08 0.13 1 51 94.4 3.2 5 56
BZT03C75 70 75 79 30 100 10 0.08 0.13 1 56 103.5 2.9 5 62
BZT03C82 77 82 87 30 100 10 0.08 0.13 1 62 114 2.6 5 68
BZT03C91 85 91 96 60 200 5 0.09 0.13 1 68 126 2.4 5 75
BZT03C100 94 100 106 60 200 5 0.09 0.13 1 75 139 2.2 5 82
BZT03C110 104 110 116 80 250 5 0.09 0.13 1 82 152 2.0 5 91
BZT03C120 114 120 127 80 250 5 0.09 0.13 1 91 167 1.8 5 100
BZT03C130 124 130 141 110 300 5 0.09 0.13 1 100 185 1.6 5 110
BZT03C150 138 150 156 130 300 5 0.09 0.13 1 110 204 1.5 5 120
BZT03C160 153 160 171 150 350 5 0.09 0.13 1 120 224 1.3 5 130
BZT03C180 168 180 191 180 400 5 0.09 0.13 1 130 249 1.2 5 150
BZT03C200 188 200 212 200 500 5 0.09 0.13 1 150 276 1.1 5 160
BZT03C220 208 220 233 350 750 2 0.09 0.13 1 160 305 1.0 5 180
BZT03C240 228 240 256 400 850 2 0.09 0.13 1 180 336 0.9 5 200
BZT03C270 251 270 289 450 1000 2 0.09 0.13 1 200 380 0.8 5 220
BZT03C300 280 300 320 450 1000 2 0.09 0.13 1 220 419 0.72 5 240
1)
10/1000 exp. falling pulse tp = 1000 µs down to 50 %
2)
Stand-off voltage = recommended suplly voltage
rzj and TKVZ @
I
Z
Te s t
Curre
nt
I
ZT
Temperature
Coefficient of
Zener Voltage
TCVZ @ I
ZT
Reverse
Leakage
Current
IR @ V
Clamping Stand-off
V
(CL)R
I
RMS
1)
@
IR@ VR
R
2)
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2
Document Number 85599
Rev. 1.4, 13-Jul-05
BZT03-Series
Vishay Semiconductors
Electrical Characteristics
BZT03D...
Partnumber Zener Voltage Range Dynamic
Resistance
VZ @ I
ZT
V Ω mA %/K µA V V A µA V
min typ max typ max min max max max max
BZT03D6V2 5.6 6.2 6.8 1 2 100 0 0.07 1500 4.4 9.5 34.0 3000 4.8
BZT03D6V8 6.1 6.8 7.5 1 2 100 0 0.07 1000 4.8 10.5 31.0 2000 5.3
BZT03D7V5 6.75 7.5 8.25 1 2 100 0 0.07 750 5.3 11.6 26.5 1500 5.9
BZT03D8V2 7.4 8.2 9 1 2 100 0.03 0.08 600 5.9 12.6 24.4 1200 6.5
BZT03D9V1 8.2 9.1 10 2 4 50 0.03 0.08 20 6.5 13.7 22.7 50 7.1
BZT03D10 9 10 11 2 4 50 0.05 0.09 10 7.1 15.2 20.3 20 7.9
BZT03D11 9.9 11 12.1 4 7 50 0.05 0.1 4 7.9 16.2 19.1 5 8.6
BZT03D12 10.8 12 13.2 4 7 50 0.05 0.1 3 8.6 17.5 17.7 5 9.3
BZT03D13 11.7 13 14.3 5 10 50 0.05 0.1 2 9.3 19.1 15.9 5 10.6
BZT03D15 13.5 15 16.5 5 10 50 0.05 0.1 1 10.6 21.8 14.4 5 11.6
BZT03D16 14.4 16 17.6 6 15 25 0.06 0.11 1 11.6 23.4 13.1 5 12.6
BZT03D18 16.2 18 19.8 6 15 25 0.06 0.11 1 12.6 26.3 11.7 5 14.4
BZT03D20 18 20 22 6 15 25 0.06 0.11 1 14.4 29.2 10.6 5 15.8
BZT03D22 29.8 22 24.2 6 15 25 0.06 0.11 1 15.8 31.9 9.7 5 17.2
BZT03D24 21.6 24 26.4 7 15 25 0.06 0.11 1 17.2 34.6 8.9 5 19.4
BZT03D27 24.3 27 29.7 7 15 25 0.06 0.11 1 19.4 39 7.9 5 21.5
BZT03D30 27 30 33 8 15 25 0.06 0.11 1 21.5 43.5 7.1 5 23.5
BZT03D33 29.7 33 36.3 8 15 25 0.06 0.11 1 23.5 47.5 6.5 5 25.8
BZT03D36 32.4 36 39.6 21 40 10 0.06 0.11 1 25.8 51.5 6.0 5 28
BZT03D39 35.1 39 42.9 21 40 10 0.06 0.11 1 28 56 5.5 5 31
BZT03D43 38.7 43 47.3 24 45 10 0.07 0.12 1 31 62 4.9 5 33.5
BZT03D47 42.3 47 51.7 24 45 10 0.07 0.12 1 33.5 67.5 4.6 5 36.5
BZT03D51 45.9 51 56.1 25 60 10 0.07 0.12 1 36.5 73 4.2 5 40
BZT03D56 50.4 56 61.6 25 60 10 0.07 0.12 1 40 81 3.8 5 44.5
BZT03D62 55.8 62 68.2 25 80 10 0.08 0.13 1 44.5 89 3.5 5 49
BZT03D68 61.2 68 74.8 25 80 10 0.08 0.13 1 49 97 3.2 5 54
BZT03D75 67.5 75 82.5 30 100 10 0.08 0.13 1 54 107 2.9 5 59
BZT03D82 73.8 82 90.2 30 100 10 0.08 0.13 1 59 117 2.6 5 65
BZT03D91 81.9 91 100 60 200 5 0.09 0.13 1 65 130 2.4 5 71
BZT03D100 90 100 110 60 200 5 0.09 0.13 1 71 143 2.2 5 79
BZT03D110 99 110 121 80 250 5 0.09 0.13 1 79 157 2.0 5 86
BZT03D120 108 120 132 80 250 5 0.09 0.13 1 86 172 1.8 5 93
BZT03D130 117 130 143 110 300 5 0.09 0.13 1 93 187 1.6 5 106
BZT03D150 135 150 165 130 300 5 0.09 0.13 1 106 213 1.5 5 116
BZT03D160 144 160 176 150 350 5 0.09 0.13 1 116 229 1.3 5 126
BZT03D180 162 180 198 180 400 5 0.09 0.13 1 126 256 1.2 5 144
BZT03D200 180 200 220 200 500 5 0.09 0.13 1 144 284 1.1 5 158
BZT03D220 198 220 242 350 750 2 0.09 0.13 1 158 314 1.0 5 172
BZT03D240 216 240 264 400 850 2 0.09 0.13 1 172 364 0.9 5 194
BZT03D270 243 270 297 450 1000 2 0.09 0.13 1 194 388 0.8 5 215
1)
10/1000 exp. falling pulse tp = 1000 µs down to 50 %
2)
Stand-off voltage = recommended suplly voltage
rzj and TKVZ @
I
Z
Te st
Curre
nt
I
ZT
Temperature
Coefficient of
Zener Voltage
TCVZ @ I
ZT
Reverse
Leakage
Current
IR @ V
Clamping Stand-off
V
(CL)R
I
RMS
1)
@
IR@ VR
R
2)
Document Number 85599
Rev. 1.4, 13-Jul-05
www.vishay.com
3
BZT03-Series
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
50 3
25
7
50
2
94 9086a
Figure 1. Epoxy Glass Hard Tissue, Board Thickness 1.5 mm,
R
≤100 K/W
thJA
tot
P –Total Power Dissipation ( W )
94 9584
4
l=10mm
3
15mm
2
20mm
1
0
0
40 80 120 160
T
– Ambient Temperature ( °C )
amb
see Fig.1
ll
TL=constant
200
3.0
2.5
2.0
Tj=25°C
1.5
1.0
F
I – Forward Current (A )
0.5
0
0 0.5 1.0 1.5
94 9585
VF– Forward Voltage(V)
Figure 3. Forward Current vs. Forward Voltage
10000
Tj=25°C
1000
Dissipation (W)
100
ZSM
P – Non-Repetitive Surge Power
10
0.01 0.1 1 10
94 9586
tp– Pulse Length ( ms )
2.0
100
Figure 2. Total Power Dissipation vs. Ambient Temperature
Package Dimensions in mm (Inches)
Sintered Glass Case
SOD-57
26(1.014) min.
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4
Cathode Identification
4.0 (0.156) max.
Figure 4. Non Repetitive Surge Power Dissipation vs. Pulse
Length
3.6 (0.140)max.
ISO Method E
26(1.014) min.
94 9538
0.82 (0.032) max.
Document Number 85599
Rev. 1.4, 13-Jul-05
BZT03-Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85599
Rev. 1.4, 13-Jul-05
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
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