Vishay BYX82TR, BYX83TR, BYX84TR, BYX85TR, BYX86TR Schematics
www.vishay.com
949539
Standard Avalanche Sinterglass Diode
BYX82, BYX83, BYX84, BYX85, BYX86
Vishay Semiconductors
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• High surge current loading
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
APPLICATIONS
• Rectification, general purpose
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BYX86 BYX86TR 5000 per 10" tape and reel 25 000
BYX86 BYX86TAP 5000 per ammopack 25 000
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYX82 V
BYX83 V
BYX84 V
BYX85 V
BYX86 V
= 200 V; I
R
= 400 V; I
R
= 600 V; I
R
= 800 V; I
R
= 1000 V; I
R
= 2 A SOD-57
F(AV)
= 2 A SOD-57
F(AV)
= 2 A SOD-57
F(AV)
= 2 A SOD-57
F(AV)
= 2 A SOD-57
F(AV)
ABSOLUTE MAXIMUM RATINGS (T
= 25 °C, unless otherwise specified)
amb
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
BYX82 V
Reverse voltage = repetitive peak
reverse voltage
See electrical characteristics
BYX83 V
BYX84 V
BYX85 V
BYX86 V
Peak forward surge current t
= 10 ms, half sine wave I
p
Repetitive peak forward current I
Average forward current T
2
i
t-rating i2 t8A
45 °C I
amb
Junction and storage temperature
range
Rev. 1.7, 11-Sep-12
For technical questions within your region: DiodesAmericas@vishay.com
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
R
R
R
R
R
T
= V
= V
= V
= V
= V
FSM
FRM
F(AV)
= T
j
RRM
RRM
RRM
RRM
RRM
stg
200 V
400 V
600 V
800 V
1000 V
- 55 to + 175 °C
Document Number: 86052
50 A
10 A
2A
2
s
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
0 0.6 1.2 1.8 2.4
0.01
0.1
1
10
3.0
94 9573
I – Forward Current (A )
F
VF– Forward Voltage(V)
Scattering Limits
Tj=25°C
Tj= 175°C
BYX82, BYX83, BYX84, BYX85, BYX86
Vishay Semiconductors
MAXIMUM THERMAL RESISTANCE (T
= 25 °C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient
Lead length l = 10 mm, T
On PC board with spacing 25 mm R
ELECTRICAL CHARACTERISTICS (T
= 25 °C, unless otherwise specified)
amb
= constant R
L
thJA
thJA
45 K/W
100 K/W
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
Reverse current
V
R
Diode capacitance V
Reverse recovery time I
Reverse recovery charge I
TYPICAL CHARACTERISTICS (T
120
100
80
60
40
ll
TL= constant
= 0.5 A, IR = 1 A, iR = 0.25 A t
F
= IR = 1 A, dI/dt = 5 A/μs Q
F
amb
= 1 A V
F
V
= V
R
RRM
= V
, Tj = 100 °C I
RRM
= 4 V, f = 1 MHz C
R
F
I
R
R
D
rr
rr
= 25 C, unless otherwise specified)
-0.91 V
-0.11μA
-1025μA
-20-pF
-24μs
-36μC
20
thJA
R –Therm. Resist.Junction/ Ambient ( K/W)
94 9572
0
0
51015 25
l – Lead Length ( mm )
20
30
Fig. 1 - Max. Thermal Resistance vs. Lead Length
240
R
≤
°
200
160
120
80
j
40
T – Junction Temperature ( C )
0
Reverse / Repetitive Peak Reverse Voltage(V)
94 9579
thJA
R
100 K/W
≤
thJA
BYX
82
BYX
83
0 400 800 1200
57 K/W
BYX
84
BYX
85
R
thJA
BYX
≤ 35 K/W
V
V
86
RRM
R
1600
Fig. 2 - Junction Temperature vs.
Reverse/Repetitive Peak Reverse Voltage
Fig. 3 - Forward Current vs. Forward Voltage
30
24
18
12
D
6
C – Diode Capacitance ( pF )
0
0.1 1 10
94 9574
f = 1 MHz
=25°C
T
j
VR– Reverse Voltage(V)
100
Fig. 4 - Typ. Diode Capacitance vs. Reverse Voltage
Rev. 1.7, 11-Sep-12
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 86052
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