Vishay BYW82, BYW83, BYW84, BYW85, BYW86 Schematics
BYW82, BYW83, BYW84, BYW85, BYW86
www.vishay.com
Standard Avalanche Sinterglass Diode
949588
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
Vishay Semiconductors
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Controlled avalanche characteristics
• Low reverse current
• High surge current loading
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLCIATIONS
• Rectification, general purpose
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BYW82 or BYW83 or BYW84 and BYW86 BYW86-TR 2500 per 10" tape and reel 12 500
BYW82 or BYW84 and BYW85 BYW85-TAP 2500 per ammopack 12 500
BYW85 BYW85TR 2500 per 10" tape and reel 12 500
BYW83 or BYW86 BYW86TAP 2500 per ammopack 12 500
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYW82 V
BYW83 V
BYW84 V
BYW85 V
BYW86 V
ABSOLUTE MAXIMUM RATINGS (T
= 25 °C, unless otherwise specified)
amb
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak reverse
voltage
Peak forward surge current t
See electrical characteristics
= 10 ms, half sine wave I
p
Repetitive peak forward current I
Average forward current I
Pulse avalanche peak power t
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
2
i
t-rating i2t40A2s
= 20 μs, half sine wave, Tj = 175 °C P
p
I
(BR)R
Junction and storage temperature range T
= 200 V, I
R
= 400 V, I
R
= 600 V, I
R
= 800 V, I
R
= 1000 V, I
R
= 3 A SOD-64
F(AV)
= 3 A SOD-64
F(AV)
= 3 A SOD-64
F(AV)
= 3 A SOD-64
F(AV)
= 3 A SOD-64
F(AV)
BYW82 V
BYW83 V
BYW84 V
BYW85 V
BYW86 V
R
R
R
R
R
= V
= V
= V
= V
= V
= 1 A, Tj = 175 °C E
= T
j
FSM
FRM
F(AV)
RRM
RRM
RRM
RRM
RRM
R
R
-55 to +175 °C
stg
200 V
400 V
600 V
800 V
1000 V
100 A
18 A
3A
1000 W
20 mJ
Rev. 2.0, 04-Nov-15
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86051
www.vishay.com
0 5 10 15 25
0
10
20
30
40
R
thJA
- Therm. Resist.
Junction/Ambient (K/W)
I - Lead Length (mm)
30
94 9563
20
ll
TL = constant
I
F
- Forward Current (A)
0.001
0.01
0.1
1
10
100
0 0.4 0.8 1.2 1.6 2.0
VF - Forward Voltage (V)
16360
Tj = 25 °C
Tj = 175 °C
0
50
100
150
200
250
300
350
25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
16363
VR = V
RRM
P
R
- Reverse Power Dissipation (mW)
PR-Limit
at 100 % V
R
PR-Limit
at 80 % V
R
BYW82, BYW83, BYW84, BYW85, BYW86
Vishay Semiconductors
MAXIMUM THERMAL RESISTANCE (T
= 25 °C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient
Lead length l = 10 mm, T
On PC board with spacing 25 mm R
ELECTRICAL CHARACTERISTICS (T
= 25 °C, unless otherwise specified)
amb
= constant R
L
thJA
thJA
25 K/W
70 K/W
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
Reverse current
Breakdown voltage I
V
R
= 100 μA, tp/T = 0.01, tp = 0.3 ms V
R
Diode capacitance V
I
= 0.5 A, IR = 1 A, iR = 0.25 A t
Reverse recovery time
Reverse recovery charge l
TYPICAL CHARACTERISTICS (T
F
= 1 A, dI/dt = 5 A/μs, VR = 50 V t
I
F
= 1 A, dI/dt = 5 A/μs Q
F
= 25 C, unless otherwise specified)
amb
= 3 A V
F
V
= V
R
RRM
= V
, Tj = 100 °C I
RRM
= 4 V, f = 1 MHz C
R
I
R
R
(BR)
rr
rr
F
D
rr
--1V
-0.11μA
- 5 10 μA
- - 1600 V
-4060pF
-3.55μs
-4.57.5μs
- 8 12 μC
Fig. 1 - Max. Thermal Resistance vs. Lead Length
3.5
3.0
2.5
2.0
1.5
1.0
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Rev. 2.0, 04-Nov-15
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0.5
- Average Forward Current (A)
FAV
I
0.0
16361
For technical questions within your region: DiodesAmericas@vishay.com
Fig. 3 - Forward Current vs. Forward Voltage
V
= V
R
RRM
half sinewave
= 25 K/W
R
thJA
I = 10 mm
R
= 70 K/W
thJA
PCB: d = 25 mm
0 20 40 60 80 100 120 140 160 180
T
- Ambient Temperature (°C)
amb
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 86051
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