VISHAY BYV26 Technical data
Ultra Fast Avalanche Sinterglass Diode
Features
• Glass passivated junction
• Hermetically sealed package
• Very low switching losses
• Low reverse current
• High reverse voltage
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
e2
BYV26
Vishay Semiconductors
949539
Applications
Switched mode power supplies
High-frequency inverter circuits
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Mechanical Data
Weight: approx. 369 mg
Case: SOD-57 Sintered glass case
Parts Table
Part Type differentiation Package
BYV26A V
BYV26B V
BYV26C V
BYV26D V
BYV26E V
= 200 V; I
R
= 400 V; I
R
= 600 V; I
R
= 800 V; I
R
= 1000 V; I
R
= 1 A SOD-57
FAV
= 1 A SOD-57
FAV
= 1 A SOD-57
FAV
= 1 A SOD-57
FAV
= 1 A SOD-57
FAV
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Part Symbol Val ue Unit
Reverse voltage = Repetitive
peak reverse voltage
Peak forward surge current t
Average forward current I
Non repetitive reverse
avalanche energy
Junction and storage
temperature range
see electrical characteristics BYV26A V
BYV26B V
BYV26C V
BYV26D V
BYV26E V
= 10 ms, half sinewave I
p
I
= 1 A, inductive load E
(BR)R
R
R
R
R
R
T
= V
= V
= V
= V
= V
FSM
FAV
= T
j
R
RRM
RRM
RRM
RRM
RRM
stg
200 V
400 V
600 V
800 V
1000 V
30 A
1A
10 mJ
- 55 to + 175 °C
Document Number 86040
Rev. 1.6, 14-Apr-05
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BYV26
Vishay Semiconductors
Maximum Thermal Resistance
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Valu e Unit
Junction ambient l = 10 mm, T
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Par t Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Reverse breakdown voltage I
Reverse recovery time I
= 1 A V
F
I
= 1 A, Tj = 175 °C V
F
= V
R
RRM
V
= V
R
= 100 µA BYV26A V
R
= 0.5 A, IR = 1 A, iR = 0.25 A BYV26A-
F
, Tj = 150 °C I
RRM
= constant R
L
BYV26B V
BYV26C V
BYV26D V
BYV26E V
BYV26C
BYV26D-
BYV26E
thJA
F
F
I
R
R
(BR)R
(BR)R
(BR)R
(BR)R
(BR)R
t
rr
t
rr
45 K/W
2.5 V
1.3 V
5 µA
100 µA
300 V
500 V
700 V
900 V
1100 V
30 ns
75 ns
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
600
VR=V
RRM
200V
400V
600V
800V
1000V
200
R
P - Maximum Reverse Power Dissipation (mW
95 9728
500
R
=45K/W
thJA
400
R
= 100 K/W
300
200
100
0
0 40 80 120 160
thJA
Tj– Junction Temperature (° C)
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
R
I - Reverse Current ( µA)
95 9729
1000
VR=V
RRM
100
10
1
0 40 80 120 160
Tj– Junction Temperature ( °C)
Figure 2. Max. Reverse Current vs. Junction Temperature
200
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Document Number 86040
Rev. 1.6, 14-Apr-05
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