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Fast Silicon Mesa Rectifiers
Features
D
Glass passivated junction
D
Hermetically sealed package
D
Soft recovery characteristic
D
Low reverse current
Applications
Fast rectifier and switch for example for TV–line output
circuits and switch mode power supply
BYV12...BYV16
Vishay Telefunken
94 9539
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage BYV12 VR=V
=Repetitive peak reverse voltage
BYV13 VR=V
BYV14 VR=V
BYV15 VR=V
BYV16 VR=V
Peak forward surge current tp=10ms,
half sinewave
Repetitive peak forward current I
Average forward current ϕ=180°, T
Junction and storage
=25°C I
amb
Tj=T
temperature range
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=10mm, TL=constant R
on PC board with spacing 25mm R
thJA
thJA
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1A V
Reverse current VR=V
VR=V
RRM
, Tj=150°C I
RRM
Reverse recovery time IF=0.5A, IR=1A, iR=0.25A t
Reverse recovery charge IF=1A, di/dt=5A/ms Q
F
I
R
R
rr
rr
I
FSM
FRM
FAV
RRM
RRM
RRM
RRM
RRM
stg
100 V
400 V
600 V
800 V
1000 V
40 A
9 A
1.5 A
–65...+175
45 K/W
100 K/W
1.5 V
1 5
60 150
300 ns
200 nC
°
C
m
A
m
A
Document Number 86039
Rev. 2, 24-Jun-98
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1 (4)
BYV12...BYV16
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
120
ll
100
80
60
TL=constant
40
20
0
thJA
0
R – Therm. Resist. Junction / Ambient ( K/W )
51015 25
20
30
l – Lead Length ( mm )94 9101
Figure 1. Typ. Thermal Resistance vs. Lead Length
1.2
V
1.0
0.8
0.6
fv20kHz
R
thJA
RRM
v
PCB
100K/W
240
R
=100K/W
200
°
thJA
V
RRM
160
BYV12
V
R
120
BYV14
BYV16
80
j
40
T – Junction Temperature ( C )
BYV13
BYV15
0
1000
94 9517
0 200 400 600 800
VR,V
– Reverse / Repetitive Peak Reverse
RRM
Voltage ( V )
Figure 4. Junction Temperature vs. Reverse/Repetitive
Peak Reverse Voltage
1000
100
m
10
Scattering Limit
0.4
0.2
FAV
I – Average Forward Current ( A )
0
200
94 9519
0 40 80 120 160
T
– Ambient Temperature ( °C )
amb
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
2.0
1.6
1.2
0.8
0.4
FAV
I – Average Forward Current ( A )
0
0
40 80 120 160
T
– Ambient Temperature ( °C )94 9518
amb
V
fv20kHz
R
thJA
L=10mm
RRM
v
45K/W
200
Figure 3. Max. Average Forward Current vs. Ambient
Temperature
1
R
I – Reverse Current ( A )
VR=V
RRM
200
94 9521
0.1
0 40 80 120 160
T
– Junction Temperature ( °C )
j
Figure 5. Reverse Current vs. Junction Temperature
100
10
Tj=175°C
1
F
0.1
I – Forward Current ( A )
Tj=25°C
0.01
01 2 3
4
VF – Forward Voltage ( V )94 9520
Figure 6. Max. Forward Current vs. Forward Voltage
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2 (4)
Document Number 86039
Rev. 2, 24-Jun-98
12
(
)
10
8
6
4
D
C – Diode Capacitance ( pF )
2
f=470kHz
T
=25°C
j
94 9523
0
0.1 1 10
VR – Reverse Voltage ( V )
100
Figure 7. Typ. Diode Capacitance vs. Reverse Voltage
1000
100
10
BYV12...BYV16
Vishay Telefunken
V
=1000V
RRM
R
=100K/W
thJA
T
=25°C
amb
T
=45°C
amb
T
=60°C
amb
1
thp
Z – Thermal Resistance for Pulse Cond. (K/W)
–5
10
–4
10
Dimensions in mm
Sintered Glass Case
SOD 57
Weight max. 0.5g
26 min. 26 min.
T
=70°C
amb
T
=100°C
amb
–3
10
–2
10
tp – Pulse Length ( s )94 9522
–1
10
0
10
1
10
0
10
I
– Repetitive Peak
FRM
Forward Current
1
10
A
Figure 8. Thermal Response
Cathode Identification
4.2 max.
∅ 3.6 max.
technical drawings
according to DIN
specifications
94 9538
∅ 0.82 max.
Document Number 86039
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
3 (4)
BYV12...BYV16
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
4 (4)
Document Number 86039
Rev. 2, 24-Jun-98
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