VISHAY BY448, BY458 Technical data
Standard Avalanche Sinterglass Diode
Features
• Glass passivated junction
• Hermetically sealed package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
High voltage rectification diode
Efficiency diode in horizontal deflection circuits
e2
BY448 / BY458
Vishay Semiconductors
949539
Mechanical Data
Case: SOD-57 Sintered glass case
Terminals: Plated axial leads, solderable per
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg
MIL-STD-750, Method 2026
Parts Table
Part Type differentiation Package
BY448 V
BY458 V
= 1500 V; I
R
= 1200 V; I
R
= 2 A SOD-57
FAV
= 2 A SOD-57
FAV
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Part Symbol Val ue Unit
Reverse voltage see electrical characteristics BY448 V
BY458 V
Peak forward surge current t
Average forward current I
Junction temperature T
Storage temperature range T
Non repetitive reverse
avalanche energy
= 10 ms, half sinewave I
p
I
= 0.4 A E
(BR)R
R
R
= V
= V
FSM
FAV
stg
j
R
RRM
RRM
1500 V
1200 V
30 A
2A
140 °C
- 55 to + 175 °C
10 mJ
Maximum Thermal Resistance
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Junction ambient l = 10 mm, T
on PC board with spacing
25 mm
Document Number 86006
Rev. 1.6, 14-Apr-05
= constant R
L
thJA
R
thJA
45 K/W
100 K/W
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BY448 / BY458
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Total reverse recovery time I
Reverse recovery time I
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
= 3 A V
F
= V
R
RRM
V
= V
R
= 1 A, - diF/dt = 0.05 A/µst
F
= 0.5 A, IR = 1 A, iR = 0,25 A t
F
, Tj = 140 °C I
RRM
F
I
R
R
rr
rr
1.6 V
3 µA
140 µA
20 µs
2 µs
120
ll
100
80
TL= constant
60
40
20
0
thJA
0
R Therm. Resist. Junction/Ambient (K/W)
94 9101
51015 25
l - Lead Length ( mm )
20
Figure 1. Typ. Thermal Resistance vs. Lead Length
100
T
150°C
=
j
10
1
Tj=25°C
0.1
F
0.01
I - Forward Current ( A )
30
2.5
2.0
1.5
1.0
0.5
R
= 100 K/W
thJA
PCB:d=25mm
0
0755025 125100 150
T
- Ambient Temperature ( ° C)
amb
16418
FA
I - Average Forward Current ( A )
=V
V
R
RRM
half sinewave
R
= 45 K/W
thJA
l=10mm
Figure 3. Max. Average Forward Current vs. Ambient Temperature
1000
VR=V
RRM
100
10
R
I - Reverse Current ( µA)
0.001
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
16417
Figure 2. Forward Current vs. Forward Voltage
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2
VF- Forward V oltage(V)
1
25 50 75 100 125 150
16419
Tj- Junction T emperature ( ° C)
Figure 4. Reverse Current vs. Junction Temperature
Document Number 86006
Rev. 1.6, 14-Apr-05
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