Fast Avalanche Sinterglass Diode
Features
• Glass passivated junction
• Hermetically sealed package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Fast rectification and switching avalanche sinterglass
diode for TV-line output circuits and switch mode
power supply
e2
BY203-12S / 16S / 20S
Vishay Semiconductors
949539
Mechanical Data
Case: SOD-57 Sintered glass case
Terminals: Plated axial leads, solderable per
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg
MIL-STD-750, Method 2026
Parts Table
Par t Type differentiation Package
BY203-12S V
BY203-16S V
BY203-20S V
= 1200 V; I
R
= 1600 V; I
R
= 2000 V; I
R
= 250 mA SOD-57
FAV
= 250 mA SOD-57
FAV
= 250 mA SOD-57
FAV
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Part Symbol Val ue Unit
Reverse voltage = Repetitive
peak reverse voltage
Average forward current I
Peak forward surge current t
Junction temperature range T
Storage temperature range T
Non repetitive reverse
avalanche energy
= 100 µA BY203-12S VR = V
I
R
BY203-16S V
BY203-20S V
= 10 ms half sinewave I
p
I
= 0.4 A E
(BR)R
R
R
= V
= V
FAV
FSM
stg
j
R
RRM
RRM
RRM
1200 V
1600 V
2000 V
250 mA
20 A
-55 to +150 °C
-55 to +175 °C
10 mJ
Maximum Thermal Resistance
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Junction ambient l = 10 mm, T
maximum lead length R
Document Number 86002
Rev. 1.7, 13-Apr-05
= constant R
L
thJA
thJA
45 K/W
100 K/W
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1
BY203-12S / 16S / 20S
ge(V)
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parame te r Test condition Par t Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Breakdown voltage I
= 200 mA, tp/T = 0.01,
F
= 0.3 ms
t
p
= 700 V BY203-12S I
R
V
= 1000 V BY203-16S I
R
V
= 1200 V BY203-20S I
R
= 100 µA, tp/T = 0.01,
R
= 0.3 ms
t
p
BY203-12S V
BY203-16S V
BY203-20S V
Reverse recovery time I
= 0.5 A, IR = 1 A, iR = 0.25 A t
F
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
240
°
200
160
120
80
j
40
T – Junction Temperature ( C )
BY203/12
BY203/16
V
RRM
V
R
BY203/20
0
1600
94 9080
0 400 800 1200
VR,V
– Reverse / Repetitive Peak Reverse
RRM
Volta
Figure 1. Junction Temperature vs. Reverse/Repetitive Peak
Reverse Voltage
0.30
0.25
0.20
0.15
0.10
0.05
FAV
I –Average ForwardCurrent ( A )
0.00
16398
Figure 3. Max. Average Forward Current vs. Ambient Temperature
V
F
R
R
R
(BR)
(BR)
(BR)
VR=V
half sinewave
0 30 60 90 120 150
T
amb
1200 V
1600 V
2000 V
rr
R
thJA
l=10mm
R
=100K/W
thJA
PCB: d=25mm
RRM
– Ambient Temperature (°C )
2.4 V
2 µA
2 µA
2 µA
300 ns
=45K/W
10.000
1.000
0.100
0.010
F
I – Forward Current ( A)
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
16397
Figure 2. Forward Current vs. Forward Voltage
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2
Tj=175°C
VF– Forward Voltage(V)
Tj=25°C
1000
VR=V
RRM
100
10
R
I – Reverse Current (µA)
1
25 50 75 100 125 150
16399
Tj– Junction Temperature (°C )
Figure 4. Reverse Current vs. Junction Temperature
Document Number 86002
Rev. 1.7, 13-Apr-05
BY203-12S / 16S / 20S
Vishay Semiconductors
500
400
300
200
100
R
P – Reverse Power Dissipation ( mW)
0
25 50 75 100 125 150
16400
PR–Limit
@80%V
Tj– Junction Temperature ( °C )
VR=V
PR–Limit
@100%V
R
RRM
R
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
Package Dimensions in mm (Inches)
Sintered Glass Case
SOD-57
Cathode Identification
18
16
14
12
10
8
6
4
D
C – Diode Capacitance ( pF )
2
0
16401
Figure 6. Diode Capacitance vs. Reverse Voltage
3.4 (0.133)max.
f=1MHz
0.1 1.0 10.0 100.0
VR– Reverse Voltage(V)
18955
ISO Method E
0.82 (0.032) max.
26(1.014) min.
Document Number 86002
Rev. 1.7, 13-Apr-05
4.2 (0.164) max.
26(1.014) min.
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3
BY203-12S / 16S / 20S
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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4
Document Number 86002
Rev. 1.7, 13-Apr-05
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
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