VISHAY BUD744 User Manual

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Silicon NPN High Voltage Switching Transistor

Features

D

Simple-sWitch-Off Transistor (SWOT)

D

HIGH SPEED technology

D

Planar passivation

D

100 kHz switching rate

D

Very low switching losses

Applications

Electronic lamp ballast circuits
Switch-mode power supplies

D

Very low dynamic saturation

D

Very low operating temperature

D

Optimized RBSOA

D

High reverse voltage

BUD744

Vishay Telefunken

1

1

2

3

BUD744 1 Base 2 Collector 3 Emitter

94 8964

BUD744 –SMD 1 Base 2 Collector 3 Emitter

Absolute Maximum Ratings

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Value Unit

Collector-emitter voltage V

V

Emitter-base voltage V
Collector current I
Collector peak current I
Base current I
Base peak current I
Total power dissipation T
Junction temperature T
Storage temperature range T

≤ 25°C P

case

V

3

CEO

CEW

CES
EBO

C

CM

B

BM

tot

j

stg

2

94 8965

400 V
500 V
700 V

9 V
8 A

12 A

4 A
6 A

40 W

150

–65 to +150

°

C

°

C

Document Number 86531
Rev. 1, 20–Jan–99

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BUD744

g

yg

Vishay Telefunken

Maximum Thermal Resistance

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Value Unit

Junction case R

Electrical Characteristics

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Min Typ Max Unit

Collector cut-off current V

Collector-emitter
breakdown voltage (figure 1)

Emitter-base
breakdown voltage

Collector-emitter IC = 1.3 A; IB = 0.3 A V
saturation voltage

Base-emitter saturation voltage IC = 1.3 A; IB = 0.3 A V

DC forward current VCE = 2 V; IC = 10 mA h
transfer ratio

Collector-emitter
working voltage

Dynamic saturation voltage IC = 4 A; IB = 0.8 A; t = 1 ms V

= 700 V I

CES

V

= 700 V; T

CES

IC = 500 mA; L = 125 mH; I

= 150°C I

case

measure

V

(BR)CEO

= 100 mA
IE = 1 mA V

(BR)EBO

IC = 4 A; IB = 1.3 A V

IC = 4 A; IB = 1.3 A V

VCE = 2 V; IC = 1.3 A h
VCE = 2 V; IC = 4 A h
VCE = 5 V; IC = 8 A h
VS = 50 V; L = 1 mH;

I

= 8.0 A; IB1 = 2.7 A;

C

V

–IB2 = 0.8 A; –VBB = 5 V

CEsatdyn

IC = 4 A; IB = 0.8 A; t = 3 ms V

CEsatdyn

thJC

CES
CES

CEsat
CEsat
BEsat
BEsat

FE
FE
FE
FE

CEW

3.12 K/W

10

m

0.2 mA

400 V

9 V

0.1 0.2 V

0.2 0.4 V

0.9 1 V
1 1.2 V

15 18
12 18

6
4

500 V

7.5 15 V

1.5 4 V

A

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Document Number 86531

Rev. 1, 20–Jan–99

BUD744

C B1

C B1 B2

V

300 V; L

200

Vishay Telefunken

Switching Characteristics

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Min Typ Max Unit
Resistive load (figure 2)
Turn on time IC = 3 A; IB1 = 0.7 A; t
Storage time

–IB2 = 1.5 A; VS = 125 V

Fall time t
Inductive load (figure 3)
Storage time IC = 3 A; IB1 = 0.7 A; –IB2 = 1.5 A; t

V

Fall time

= 300 V; L = 200 mH

clamp

Storage time IC = 3 A; IB1 = 0.7 A; –IB2 = 1.5 A;
Fall time

94 8863

clamp

T

case

=

= 100°C

=

mH;

on

t

t
t

t

s

f

s

f

s

f

0.85 1.2
1 1.7

0.15 0.3

1.5 2.5

0.1 0.2

0.1

0.14

m

s

m

s

m

s

m

s

m

s

m

s

m

s

3 Pulses

t

p

+

T

+

t

p

VS2+

0.1
10 ms

10 V

I

IBw

C

5

ICL

VS1+

0to30V

I

(BR)R

Figure 1. Test circuit for V

V

(BR)CEO

C

+

100 m

(BR)CE0

I

C

I

measure

V

CE

V

(BR)CEO

W

Document Number 86531
Rev. 1, 20–Jan–99

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BUD744

Vishay Telefunken

94 8852

I

B

I

B1

I

B1

94 8853

0

t

–I

R

C

I

C

B2

(1)

I

V

I

B

R

B

V

BB

+

CE

V

CC

(1) Fast electronic switch

Figure 2. Test circuit for switching characteristics – resistive load

C

0.9 I

0.1 I

I

B

I

B1

C

C

t

r

t

d

t

on

t

s

t

off

t

t

f

–I

0.9 I

0.1 I

0

t

B2

I

C

C

C

L

C

(2)

I

C

(1)

I

B1

V

BB

I

B

R

B

+

V

CE

V

clamp

V

CC

t

(1) Fast electronic switch

t

r

s

t

(2) Fast recovery rectifier

Figure 3. Test circuit for switching characteristics – inductive load

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Document Number 86531

Rev. 1, 20–Jan–99

BUD744

Vishay Telefunken

Typical Characteristics (T

8

6

4

C

CESat

< I

B2

< 2V

Tj = 25°C

< 0.5 x I

CEW

C

– Diagram

IB = 50mA

C

I – Collector Current ( A )

95 10558

0.1 x I

2

V

0

0 100 200 300 400

VCE – Collector Emitter Voltage ( V )

Figure 4. V

10

8

6

4

C

I - Collector Current (V)

2

= 25_C unless otherwise specified)

case

100

12.5 K/W

10

1

25 K/W

0.1

0.01

tot

P – Total Power Dissipation ( W )

0.001

95 10499

0 25 50 75 100

T

– Case Temperature ( °C )

case

500

600

Figure 7. P

10

1.4A

1A
800mA
600mA

400mA

200mA

0.1

1

I

= 0.75A

C

50 K/W

vs.T

tot

3A2A

R

thJA

1.25A

3.12 K/W

= 135 K/W

125

case

5A

4A

150

0

0246810

VCE - Collector Emitter Voltage (V)94 9207

Figure 5. IC vs. V

100

10

FE

h - Forward DC Current Transfer Ratio

1

0.01 0.1 1 10
IC - Collector Current (A)94 9209

Figure 6. hFE vs. I

CE

VCE = 10V

VCE = 5V

VCE = 2V

C

0.01

CEsat

0.01 0.1 1 10

V - Collector Emitter Saturation Voltage (V)

IB - Base Current (A)94 9208

Figure 8. V

100

Tj = 125°C
Tj = 25°C
Tj = –25°C

10

FE

h - Forward DC Current Transfer Ratio

VCE = 2V

1

0.01 0.1 1 10
IC - Collector Current (A)94 9210

CEsat

vs. I

Figure 9. hFE vs. I

B

C

Document Number 86531
Rev. 1, 20–Jan–99

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BUD744

Vishay Telefunken

m

s

t - Storage Time ( s)

94 9215

m

s

t - Storage Time ( s)

94 9211

10

saturated switching

8

R-load
I

= 1.5A, IB1 = 0.3A

C

6

Tj = 125°C

4

2

= 25°C

T

j

0

012 34

–IB2 / I

B1

Figure 10. ts vs. –IB2/I

B1

10

saturated switching

8

R-load
I

= 3A, IB1 = 0.6A

C

6

Tj = 125°C

4

2

T

= 25°C

0

j

012 34

–IB2 / I

B1

m

f

t - Fall Time ( s)

94 9216

m

f

t - Fall Time ( s)

94 9214

1.0
saturated switching

0.8

R-load
I

= 1.5A, IB1 = 0.3A

C

0.6

Tj = 125°C

0.4

0.2

= 25°C

T

j

0

012 34

–IB2 / I

B1

Figure 13. tf vs. –IB2/I

B1

1.0

saturated switching

0.8

Tj = 125°C

R-load
I

= 3A, IB1 = 0.6A

C

0.6

0.4

0.2

= 25°C

T

j

0

012 34

–IB2 / I

B1

Figure 11. ts vs. –IB2/I

10

unsaturated (Baker clamp)

8

R-load
I

= 3A, IB1 = 0.6A

C

m

6

4

s

t - Storage Time ( s)

Tj = 125°C

2

Tj = 25°C

0

012 34

94 9213

–IB2 / I

B1

Figure 12. ts vs. –IB2/I

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B1

B1

m

f

t - Fall Time ( s)

94 9212

Figure 14. tf vs. –IB2/I

B1

1.0

unsaturated (Baker clamp)

0.8

R-load
I

= 3A, IB1 = 0.6A

C

0.6

0.4

Tj = 125°C

0.2

= 25°C

T

j

0

012 34

–IB2 / I

B1

Figure 15. tf vs. –IB2/I

B1

Document Number 86531

Rev. 1, 20–Jan–99

m

f

t - Fall Time ( s)

94 9218

0.5
saturated switching

L–load

0.4
I

= 1.5A, IB1 = 0.3A

C

0.3

Tj = 125°C

0.2

= 25°C

T

–IB2 / I

j

B1

0.1

0

012 34

BUD744

Vishay Telefunken

Figure 16. tf vs. –IB2/I

B1

Document Number 86531
Rev. 1, 20–Jan–99

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BUD744

Vishay Telefunken

Dimensions in mm

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14292

Document Number 86531

Rev. 1, 20–Jan–99

BUD744

Vishay Telefunken

For ordering TO 252 add SMD to the type number (i.e. BUD744 –SMD)

Document Number 86531
Rev. 1, 20–Jan–99

14293

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BUD744

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

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Document Number 86531

Rev. 1, 20–Jan–99