VISHAY BUD744 User Manual

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查询BUD744供应商

Silicon NPN High Voltage Switching Transistor

Features

D

Simple-sWitch-Off Transistor (SWOT)

D

HIGH SPEED technology

D

Planar passivation

D

100 kHz switching rate

D

Very low switching losses

Applications

Electronic lamp ballast circuits
Switch-mode power supplies

D

Very low dynamic saturation

D

Very low operating temperature

D

Optimized RBSOA

D

High reverse voltage

BUD744

Vishay Telefunken

1

1

2

3

BUD744 1 Base 2 Collector 3 Emitter

94 8964

BUD744 –SMD 1 Base 2 Collector 3 Emitter

Absolute Maximum Ratings

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Value Unit

Collector-emitter voltage V

V

Emitter-base voltage V
Collector current I
Collector peak current I
Base current I
Base peak current I
Total power dissipation T
Junction temperature T
Storage temperature range T

≤ 25°C P

case

V

3

CEO

CEW

CES
EBO

C

CM

B

BM

tot

j

stg

2

94 8965

400 V
500 V
700 V

9 V
8 A

12 A

4 A
6 A

40 W

150

–65 to +150

°

C

°

C

Document Number 86531
Rev. 1, 20–Jan–99

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BUD744

g

yg

Vishay Telefunken

Maximum Thermal Resistance

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Value Unit

Junction case R

Electrical Characteristics

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Min Typ Max Unit

Collector cut-off current V

Collector-emitter
breakdown voltage (figure 1)

Emitter-base
breakdown voltage

Collector-emitter IC = 1.3 A; IB = 0.3 A V
saturation voltage

Base-emitter saturation voltage IC = 1.3 A; IB = 0.3 A V

DC forward current VCE = 2 V; IC = 10 mA h
transfer ratio

Collector-emitter
working voltage

Dynamic saturation voltage IC = 4 A; IB = 0.8 A; t = 1 ms V

= 700 V I

CES

V

= 700 V; T

CES

IC = 500 mA; L = 125 mH; I

= 150°C I

case

measure

V

(BR)CEO

= 100 mA
IE = 1 mA V

(BR)EBO

IC = 4 A; IB = 1.3 A V

IC = 4 A; IB = 1.3 A V

VCE = 2 V; IC = 1.3 A h
VCE = 2 V; IC = 4 A h
VCE = 5 V; IC = 8 A h
VS = 50 V; L = 1 mH;

I

= 8.0 A; IB1 = 2.7 A;

C

V

–IB2 = 0.8 A; –VBB = 5 V

CEsatdyn

IC = 4 A; IB = 0.8 A; t = 3 ms V

CEsatdyn

thJC

CES
CES

CEsat
CEsat
BEsat
BEsat

FE
FE
FE
FE

CEW

3.12 K/W

10

m

0.2 mA

400 V

9 V

0.1 0.2 V

0.2 0.4 V

0.9 1 V
1 1.2 V

15 18
12 18

6
4

500 V

7.5 15 V

1.5 4 V

A

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Document Number 86531

Rev. 1, 20–Jan–99

BUD744

C B1

C B1 B2

V

300 V; L

200

Vishay Telefunken

Switching Characteristics

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Min Typ Max Unit
Resistive load (figure 2)
Turn on time IC = 3 A; IB1 = 0.7 A; t
Storage time

–IB2 = 1.5 A; VS = 125 V

Fall time t
Inductive load (figure 3)
Storage time IC = 3 A; IB1 = 0.7 A; –IB2 = 1.5 A; t

V

Fall time

= 300 V; L = 200 mH

clamp

Storage time IC = 3 A; IB1 = 0.7 A; –IB2 = 1.5 A;
Fall time

94 8863

clamp

T

case

=

= 100°C

=

mH;

on

t

t
t

t

s

f

s

f

s

f

0.85 1.2
1 1.7

0.15 0.3

1.5 2.5

0.1 0.2

0.1

0.14

m

s

m

s

m

s

m

s

m

s

m

s

m

s

3 Pulses

t

p

+

T

+

t

p

VS2+

0.1
10 ms

10 V

I

IBw

C

5

ICL

VS1+

0to30V

I

(BR)R

Figure 1. Test circuit for V

V

(BR)CEO

C

+

100 m

(BR)CE0

I

C

I

measure

V

CE

V

(BR)CEO

W

Document Number 86531
Rev. 1, 20–Jan–99

www.vishay.de • FaxBack [phone]

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