VISHAY BUD7312 User Manual

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查询BUD7312供应商

Silicon NPN High Voltage Switching Transistor

Features

D

Simple-sWitch-Off Transistor (SWOT)

D

HIGH SPEED technology

D

Planar passivation

D

100 kHz switching rate

D

Very low switching losses

Applications

Electronic lamp ballast circuits

D

Very low dynamic saturation

D

Very low operating temperature

D

Optimized RBSOA

D

High reverse voltage

BUD7312

Vishay Telefunken

1

1

2

3

BUD7312 1 Base 2 Collector 3 Emitter

94 8964

BUD7312 –SMD 1 Base 2 Collector 3 Emitter

Absolute Maximum Ratings

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Value Unit

Collector-emitter voltage V

Emitter-base voltage V
Collector current I
Collector peak current I
Base current I
Base peak current I
Total power dissipation T
Junction temperature T
Storage temperature range T

= 25°C P

case

V

3

CEO
CES
EBO

C

CM

B

BM

tot

j

stg

2

94 8965

600 V

1200 V

9 V
3 A
5 A
2 A
4 A

40 W

150

–65 to +150

°

C

°

C

Document Number 86527
Rev. 2, 22–Jul–99

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BUD7312

g

yg

Vishay Telefunken

Maximum Thermal Resistance

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Value Unit

Junction case R

Electrical Characteristics

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Min Typ Max Unit

Collector cut-off current VCE = 1200 V I

VCE = 1200 V; T

Collector-emitter
breakdown voltage (figure 1)

IC = 300 mA; L = 125 mH;
I

measure

= 100 mA
Emitter cut-off current VEB = 9 V I
Collector-emitter IC = 0.5 A; IB = 0.13 A V

saturation voltage

IC = 1.5 A; IB = 0.5 A V

Base-emitter saturation voltage IC = 0.5 A; IB = 0.13 A V

IC = 1.5 A; IB = 0.5 A V

DC forward current VCE = 2 V; IC = 10 mA h
transfer ratio

VCE = 2 V; IC = 0.5 A h
VCE = 2 V; IC = 1.5 A h
VCE = 5 V; IC = 3 A h

Collector-emitter

IC = 3 A; IB1 = 1 A; –IB2 = 0.3 A V

working voltage
Dynamic saturation voltage IC = 1.5 A; IB = 0.3 A; t = 1 ms V

IC = 1.5 A; IB = 0.3 A; t = 3 ms V

= 150°C I

case

V

(BR)CEO

CEsatdyn
CEsatdyn

thJC

CES
CES

EBO
CEsat
CEsat
BEsat
BEsat

FE
FE
FE
FE

CEW

3.12 K/W

100

m

1 mA

550 V

10

m

0.25 V

0.5 V
1 V

1.1 V

15
12

6
4

650 V

15 V

7.5 V

A

A

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Document Number 86527

Rev. 2, 22–Jul–99

BUD7312

C B1 B2

C B1 B2

C B1 B2

C B1 B2

Vishay Telefunken

Switching Characteristics

T

= 25°C, unless otherwise specified

case

Parameter Test Conditions Symbol Min Typ Max Unit
Resistive load (figure 2)
Turn on time IC = 0.5 A; IB1 = 0.13 A; –IB2 = 0.25 A t
Storage time
Fall time t
Turn on time IC = 1.5 A; IB1 = 0.3 A; –IB2 = 0.75 A t
Storage time
Fall time t
Inductive load (figure 3)
Storage time IC = 0.5 A; IB1 = 0.13 A; –IB2 = 0.25 A t
Fall time
Storage time IC = 1.5 A; IB1 = 0.3 A; –IB2 = 0.75 A t
Fall time

on

t

on

t

t

t

s

f

s

f

s

f

s

f

0.35

0.5
4

0.5

0.8

2.5

0.2

4.5

2.5

0.2

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

94 8863

3 Pulses

t

p

+

T
tp+

V

S2

0.1
10 ms

+

10 V

I

IBw

C

5

ICL

VS1+

0to30V

I

(BR)R

Figure 1. Test circuit for V

V

(BR)CEO

C

+

100 m

(BR)CE0

I

C

I

measure

V

CE

V

(BR)CEO

W

Document Number 86527
Rev. 2, 22–Jul–99

www.vishay.de • FaxBack [phone]

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