VISHAY BFG67 Technical data
查询BFG67供应商
Silicon NPN Planar RF Transistor
Applications
Low noise small signal amplifiers up to 2 GHz. This
transistor has superior noise figure and associated
gain performance at UHF, VHF and microwave
frequencies.
Features
D
Small feedback capacitance
D
Low noise figure
D
High transition frequency
BFG67
Vishay Telefunken
Electrostatic sensitive device.
Observe precautions for handling.
21
94 9279
13 579
43
BFG67 Marking: V3
Plastic case (SOT 143)
1 = Collector, 2 = Base, 3 = Emitter, 4 = Emitter
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 60 °C P
amb
CBO
CEO
EBO
C
tot
j
stg
20 V
10 V
2.5 V
50 mA
200 mW
150
–65 to +150
°
C
°
C
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
Document Number 85074
Rev. 1, 11-Nov-99
3
R
thJA
www.vishay.de • FaxBack +1-408-970-5600
450 K/W
1 (4)
BFG67
Noise figure
Power gain
Vishay Telefunken
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 20 V, VBE = 0 I
Collector-base cut-off current VCB = 15 V, IE = 0 I
Emitter-base cut-off current VEB = 1 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA V
DC forward current transfer ratio VCE = 5 V, IC = 15 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 8 V, IC = 15 mA, f = 500 MHz f
Collector-base capacitance VCB = 10 V, f = 1 MHz C
Collector-emitter capacitance VCE = 8 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
VCE = 8 V, ZS = Z
f = 800 MHz, IC = 5 mA
VCE = 8 V, ZS = Z
f = 800 MHz, IC = 15 mA
VCE = 8 V, ZS = 50 W,
f = 2 GHz, I
= 5 mA
C
VCE = 8 V, ZS = 50 W,
f = 2 GHz, IC = 15 mA
VCE = 8 V, ZS = 50 W, ZL = Z
IC = 15 mA, f = 800 MHz
VCE = 8 V, ZS = 50 W,
Z
Linear output voltage – two
tone intermodulation test
= Z
L
VCE = 8 V, IC = 15 mA, dIM = 60 dB, f1 =
806 MHz, f2 = 810 MHz, ZS = ZL = 50
, IC = 15 mA, f = 2 GHz
Lopt
Third order intercept point VCE = 8 V, IC = 15 mA, f = 800 MHz IP
Sopt
Sopt
,
,
,
Lopt
V1 = V
W
CES
CBO
EBO
(BR)CEO
CEsat
FE
T
cb
ce
eb
10 V
65 100 150
0.35 pF
0.25 pF
0.85 pF
100mA
100 nA
1
0.1 0.4 V
7.5 GHz
F 0.8 dB
F 1.5 dB
F 2.5 dB
F 3.0 dB
G
pe
G
pe
2
3
17 dB
9 dB
160 mV
26 dBm
m
A
www.vishay.de • FaxBack +1-408-970-5600
2 (4)
Document Number 85074
Rev. 1, 11-Nov-99
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