查询BFG67供应商
Silicon NPN Planar RF Transistor
Applications
Low noise small signal amplifiers up to 2 GHz. This
transistor has superior noise figure and associated
gain performance at UHF, VHF and microwave
frequencies.
Features
D
Small feedback capacitance
D
Low noise figure
D
High transition frequency
BFG67
Vishay Telefunken
Electrostatic sensitive device.
Observe precautions for handling.
21
94 9279
13 579
43
BFG67 Marking: V3
Plastic case (SOT 143)
1 = Collector, 2 = Base, 3 = Emitter, 4 = Emitter
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 60 °C P
amb
CBO
CEO
EBO
C
tot
j
stg
20 V
10 V
2.5 V
50 mA
200 mW
150
–65 to +150
°
C
°
C
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
Document Number 85074
Rev. 1, 11-Nov-99
3
R
thJA
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450 K/W
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BFG67
Noise figure
Power gain
Vishay Telefunken
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 20 V, VBE = 0 I
Collector-base cut-off current VCB = 15 V, IE = 0 I
Emitter-base cut-off current VEB = 1 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA V
DC forward current transfer ratio VCE = 5 V, IC = 15 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 8 V, IC = 15 mA, f = 500 MHz f
Collector-base capacitance VCB = 10 V, f = 1 MHz C
Collector-emitter capacitance VCE = 8 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
VCE = 8 V, ZS = Z
f = 800 MHz, IC = 5 mA
VCE = 8 V, ZS = Z
f = 800 MHz, IC = 15 mA
VCE = 8 V, ZS = 50 W,
f = 2 GHz, I
= 5 mA
C
VCE = 8 V, ZS = 50 W,
f = 2 GHz, IC = 15 mA
VCE = 8 V, ZS = 50 W, ZL = Z
IC = 15 mA, f = 800 MHz
VCE = 8 V, ZS = 50 W,
Z
Linear output voltage – two
tone intermodulation test
= Z
L
VCE = 8 V, IC = 15 mA, dIM = 60 dB, f1 =
806 MHz, f2 = 810 MHz, ZS = ZL = 50
, IC = 15 mA, f = 2 GHz
Lopt
Third order intercept point VCE = 8 V, IC = 15 mA, f = 800 MHz IP
Sopt
Sopt
,
,
,
Lopt
V1 = V
W
CES
CBO
EBO
(BR)CEO
CEsat
FE
T
cb
ce
eb
10 V
65 100 150
0.35 pF
0.25 pF
0.85 pF
100mA
100 nA
1
0.1 0.4 V
7.5 GHz
F 0.8 dB
F 1.5 dB
F 2.5 dB
F 3.0 dB
G
pe
G
pe
2
3
17 dB
9 dB
160 mV
26 dBm
m
A
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2 (4)
Document Number 85074
Rev. 1, 11-Nov-99
Dimensions of BFG67 in mm
BFG67
Vishay Telefunken
96 12240
Document Number 85074
Rev. 1, 11-Nov-99
www.vishay.de • FaxBack +1-408-970-5600
3 (4)
BFG67
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
4 (4)
Document Number 85074
Rev. 1, 11-Nov-99
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