Datasheet BFG591 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BFG591

NPN 7 GHz wideband transistor

Product speciﬁcation Supersedes data of November 1992 File under Discrete Semiconductors, SC14

1995 Sep 04

Philips Semiconductors Product speciﬁcation

NPN 7 GHz wideband transistor BFG591

FEATURES

• High power gain

• Low noise figure

DESCRIPTION

NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package.

page

4

• High transition frequency

• Gold metallization ensures

excellent reliability.

PINNING

PIN DESCRIPTION

1 emitter

APPLICATIONS

Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment.

2 base 3 emitter 4 collector

123

Top view

MSB002 - 1

Fig.1 SOT223.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

V

CEO

I

C

P

tot

h

FE

C

re

f

T

G

UM

s

21

collector-base voltage open emitter −−20 V collector-emitter voltage open base −−15 V collector current (DC) −−200 mA total power dissipation up to Ts=80°C; note 1 −−2W DC current gain IC= 70 mA; VCE= 8 V 60 90 250 feedback capacitance IC=Ic= 0; VCE= 12 V; f = 1 MHz − 0.7 − pF transition frequency IC= 70 mA; VCE=12V; f=1GHz − 7 − GHz maximum unilateral

power gain insertion power gain I

2

IC= 70 mA; VCE=12V; f = 900 MHz; T

= 70 mA; VCE=12V;

C

f = 900 MHz; T

amb

=25°C

− 13 − dB

− 12 − dB

Note

1. T

is the temperature at the soldering point of the collector pin.

s

1995 Sep 04 2

Philips Semiconductors Product speciﬁcation

NPN 7 GHz wideband transistor BFG591

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

collector-base voltage open emitter − 20 V collector-emitter voltage open base − 15 V emitter-base voltage open collector − 3V collector current (DC) − 200 mA total power dissipation up to Ts=80°C; note 1 − 2W storage temperature −65 +150 °C junction temperature − 150 °C

thermal resistance from junction to

note 1 35 K/W

soldering point

Note to the Limiting values and Thermal characteristics

1. T

is the temperature at the soldering point of the collector pin.

s

1995 Sep 04 3

Philips Semiconductors Product speciﬁcation

NPN 7 GHz wideband transistor BFG591

CHARACTERISTICS

T

=25°C (unless otherwise speciﬁed).

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CES

V

(BR)EBO

I

CBO

h

FE

C

re

f

T

G

UM

s

21

V

o

collector-base breakdown voltage IC= 0.1 mA; IE=0 −−20 V collector-emitter breakdown voltage IC= 10 mA; IB=0 −−15 V emitter-base breakdown voltage IE= 0.1 mA; IC=0 −−3V collector-base leakage current IE= 0; VCB=10V −−100 nA DC current gain IC= 70 mA; VCE=8V 6090250 feedback capacitance IB=Ib= 0; VCE=12V;

− 0.7 − pF

f = 1 MHz

transition frequency IC= 70 mA; VCE=12V;

− 7 − GHz

f = 1 GHz

maximum unilateral power gain; note 1

insertion power gain I

2

IC= 70 mA; VCE=12V; f = 900 MHz; T

I

= 70 mA; VCE=12V;

C

f = 2 GHz; T

= 70 mA; VCE=12V;

C

f = 1 GHz; T

amb

=25°C

− 13 − dB

− 7.5 − dB

− 12 − dB

output voltage note 2 − 700 − mV

Notes

1. G

is the maximum unilateral power gain, assuming s12 is zero.

UM

2. dim= 60 dB (DIN45004B); Vp=Vo;Vq=Vo−6 dB; Vr=Vo−6 dB; fp= 795.25 MHz; fq= 803.25 MHz; fr= 803.25 MHz; measured at f

G

UM

= 793.25 MHz.

(p+q-r)

10

-----------------------------------------------------------1s

–()1s

11

2

s

21

2

–()

22

dB.log=

2

1995 Sep 04 4

Philips Semiconductors Product speciﬁcation

NPN 7 GHz wideband transistor BFG591

3.0

P



tot

(W)

2.5

2.0

1.5

1.0

0.5

0

0 50 100 200

Fig.2 Power derating curve.

150

Ts (

MGC791

o

C)

250

handbook, halfpage

h

FE

200

150

100

50

0

10

VCE=12V.

2

1

10

101

I (mA)

C

Fig.3 DC current gain as a function of collector

current, typical values.

MRA749

2

10

1.2

handbook, halfpage

C

re

(pF)

0.8

0.4

0

IC= 0; f= 1 MHz.

416

8

12

Fig.4 Feedback capacitance as a function of

collector-base voltage, typical values.

MGC792

VCB (V)

handbook, halfpage

8

f

T

(GHz)

6

4

2

0

1

f = 1 GHz; VCE=12V.

10

IC (mA)

Fig.5 Transition frequency as a function of

collector current, typical values.

MGC793

2

10

1995 Sep 04 5

Philips Semiconductors Product speciﬁcation

NPN 7 GHz wideband transistor BFG591

25

handbook, halfpage

gain (dB)

20

15

10

5

0

04080

f = 900 MHz; VCE=12V.

Fig.6 Gain as a function of collector current;

typical values.

MGC795

G

max

G

UM

IC (mA)

120

10

handbook, halfpage

gain (dB)

8

6

4

2

0

04080

f = 2 GHz; VCE=12V.

Fig.7 Gain as a function of collector current;

typical values.

MGC794

G

max

G

UM

IC (mA)

120

50

handbook, halfpage

gain (dB)

G

40

30

20

10

IC= 70 mA; VCE=12V.

UM

MSG

0

10

Fig.8 Gain as a function of frequency;

2

10

typical values.

MGC796

G

max

3

10

f (MHz)

4

10

1995 Sep 04 6

Philips Semiconductors Product speciﬁcation

NPN 7 GHz wideband transistor BFG591

−20

handbook, halfpage

dim

(dB)

−30

−40

−50

−60

−70

04080

VCE= 12 V; Vo= 700 mV; f

= 793.25 MHz.

(p+q-r)

I

C

Fig.9 Intermodulation distortion as a function

of collector current; typical values.

(mA)

MGC797

120

−20

handbook, halfpage

d2

(dB)

−30

−40

−50

−60

−70

04080

VCE= 12 V; Vo= 316 mV; f

(p+q)

= 810 MHz.

MGC798

I

120

(mA)

C

Fig.10 Second order Intermodulation distortion as

a function of collector current; typical values.

1995 Sep 04 7

Philips Semiconductors Product speciﬁcation

NPN 7 GHz wideband transistor BFG591

o

90

handbook, full pagewidth

135

1

o

0.5

o

45

2

3 GHz

1.0

0.8

0.6

VCE= 12 V; IC= 70 mA; Zo=50Ω.

handbook, full pagewidth

0.2

5

0.4

0.2

180

o

0.2 0.5 2

0

0.2

0.5

o

135

1 5

40 MHz

2

1

o

90

o

00

5

o

45

MGC799

1.0

Fig.11 Common emitter input reflection coefficient (s11); typical values.

o

90

135

o

45

40 MHz

o

180

50 40 30 20 10

o

135

VCE= 12 V; IC=70mA.

Fig.12 Common emitter forward transmission coefficient (s21); typical values.

1995 Sep 04 8

90

3 GHz

o

0

o

45

MGC800

Philips Semiconductors Product speciﬁcation

NPN 7 GHz wideband transistor BFG591

o

handbook, full pagewidth

90

VCE= 12 V; IC=70mA.

handbook, full pagewidth

135

o

45

3 GHz

0.5 0.4 0.3 0.2 0.1

o

180

o

135

90

40 MHz

o

0

o

45

MGC801

Fig.13 Common emitter reverse transmission coefficient (s12); typical values.

o

90

1.0

0.8

0.6

135

1

o

0.5

o

45

2

0.2 3 GHz

180

o

0.2 1 2 5

0

0.5

0.2

0.5

o

135

VCE= 12 V; IC= 70 mA; Zo=50Ω.

Fig.14 Common emitter output reflection coefficient (s22); typical values.

1995 Sep 04 9

5

0.4

0.2

o

00

40 MHz

5

2

1

o

90

o

45

MGC802

1.0

Philips Semiconductors Product speciﬁcation

NPN 7 GHz wideband transistor BFG591

SPICE parameters for the BFG591 crystal

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 1.341 fA 2 BF 123.5 − 3 NF .988 m 4 VAF 75.85 V 5 IKF 9.656 A 6 ISE 232.2 fA 7 NE 2.134 − 8 BR 10.22 − 9 NR 1.016 − 10 VAR 1.992 V 11 IKR 294.1 mA 12 ISC 211.0 aA 13 NC 997.2 − 14 RB 5.00 Ω 15 IRB 1.000 µA 16 RBM 5.00 Ω 17 RE 1.275 Ω 18 RC 920.6 mΩ 19 20 21

(1) (1) (1)

XTB 0.000 − EG 1.110 EV

XTI 3.000 − 22 CJE 3.821 pF 23 VJE 600.0 mV 24 MJE 348.5 m 25 TF 13.60 ps 26 XTF 71.73 − 27 VTF 10.28 V 28 ITF 1.929 A 29 PTF 0.000 deg 30 CJC 1.409 pF 31 VJC 219.4 mV 32 MJC 166.5 m 33 XCJ 2.340 m 34 TR 543.7 ns

(1)

35 36 37

(1) (1)

CJS 0.000 F

VJS 750.0 mV

MJS 0.000 − 38 FC 733.2 m

handbook, halfpage

L1 L2

B

C

QLB= 50; QLE= 50; QL

= scaling frequency = 1 GHz.

f

c

L

be ce

Fig.15 Package equivalent circuit SOT223.

List of components (see Fig.15)

DESIGNATION VALUE UNIT

C

be

C

cb

C

ce

L1 0.025 nH L2 1.19 nH L3 0.60 nH L

B

L

E

C

cb

B

E'

L

L3

E

(f)=QL

B,E

√(f/fc);

182 fF 16 fF 249 fF

1.50 nH

0.50 nH

CB' C'

C

E

MBC964

Note

1. These parameters have not been extracted, the default values are shown.

1995 Sep 04 10

Philips Semiconductors Product speciﬁcation

NPN 7 GHz wideband transistor BFG591

PACKAGE OUTLINE

handbook, full pagewidth

16

max

0.95

0.85

6.7

6.3

3.1

2.9

4.6

0.80

0.60

0.1 S

4

B

A

3.7

3.3

0.1 B (4x)

M

0.2 A

7.3

6.7

M

MSA035 - 1

S seating plane

0.32

0.24

0.10

0.01

o

1.80 max

16

10

max

o

123

o

2.3

Dimensions in mm.

Fig.16 SOT223.

1995 Sep 04 11

Philips Semiconductors Product speciﬁcation

NPN 7 GHz wideband transistor BFG591

DEFINITIONS

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

1995 Sep 04 12