Datasheet BFG94 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BFG94

NPN 6 GHz wideband transistor

Product speciﬁcation File under Discrete Semiconductors, SC14

September 1995

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistor BFG94

FEATURES

• High power gain

• Low noise figure

• Low intermodulation distortion

• Gold metallization ensures

excellent reliability.

PINNING

PIN DESCRIPTION

1 emitter 2 base 3 emitter 4 collector

age

4

DESCRIPTION

NPN transistor mounted in a plastic SOT223 envelope. It is primarily

123

Top view

MSB002 - 1

intended for use in communication and instrumentation systems.

Fig.1 SOT223.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V V I P C f

G

V

CBO CEO

C

tot

re

T

UM

O

collector-base voltage open emitter −−15 V collector-emitter voltage open base −−12 V DC collector current −−60 mA total power dissipation up to Ts = 140 °C (note 1) −−700 mW feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz −−0.8 pF transition frequency IC = 45 mA; VCE = 10 V; f = 1 GHz;

T

= 25 °C

amb

maximum unilateral power gain IC = 45 mA; VCE = 10 V; f = 1 GHz;

T

= 25 °C

amb

output voltage IC = 45 mA; VCE = 10 V;

46− GHz

11.5 13.5 − dB

− 500 − mV dim = −60 dB; RL = 75 Ω; f = 800 MHz; T

P

L1

output power at 1 dB gain compression

IC = 45 mA; VCE = 10 V; f = 1 GHz; T

= 25 °C

amb

= 25 °C

amb

− 21.5 − dBm

Note

1. T

is the temperature at the soldering point of the collector tab.

s

September 1995 2

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistor BFG94

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE

R

th j-s

collector-base voltage open emitter − 15 V collector-emitter voltage open base − 12 V emitter-base voltage open collector − 2V DC collector current − 60 mA total power dissipation up to Ts = 140 °C (note 1) − 700 mW storage temperature −65 150 °C junction temperature − 175 °C

thermal resistance from junction to

up to Ts = 140 °C (note 1) 50 K/W

soldering point

Note

1. T

is the temperature at the soldering point of the collector tab.

s

September 1995 3

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistor BFG94

CHARACTERISTICS

T

= 25 °C unless otherwise speciﬁed.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

C

c

C

e

C

re

f

T

G

UM

F minimum noise ﬁgure Γ

V

O

d

2

P

L1

ITO third order intercept point note 4 − 34 − dBm

collector cut-off current IE = 0; VCB = 10 V −−100 nA DC current gain IC = 30 mA; VCE = 5 V 45 90 −

I

= 45 mA; VCE = 10 V − 100 −

C

collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 0.9 2 pF emitter capacitance IC = ie = 0; VEB = 0.5 V; f = 1 MHz − 2.9 4.5 pF feedback capacitance IC = ic = 0; VCE = 10 V; f = 1 MHz − 0.5 0.8 pF transition frequency IC = 45 mA; VCE = 10 V; f = 1 GHz;

T

= 25 °C

amb

I

= 30 mA; VCE = 5 V; f = 1 GHz;

C

T

= 25 °C

amb

maximum unilateral power gain (note1)

IC = 45 mA; VCE = 10 V; f = 1 GHz; T

= 25 °C

amb

= Γ

; IC = 45 mA; VCE = 10 V;

s

opt

4 −− GHz

46− GHz

11.5 13.5 − dB

− 2.7 − dB

f = 500 MHz

= Γ

Γ

; IC = 45 mA; VCE = 10 V;

s

opt

− 3 − dB

f = 1 GHz output voltage note 2 − 500 − mV second order intermodulation

note 3 −−51 − dB distortion

output power at 1 dB gain compression

IC = 45 mA; VCE = 10 V; RL = 50 Ω;

T

= 25 °C; measured at f = 1 GHz

amb

− 21.5 − dBm

Notes

1. G

2. d

is the maximum unilateral power gain, assuming S12 is zero and

UM

2

S

G

UM

= −60 dB (DIN 45004B, par 6.3: 3-tone); IC = 45 mA; VCE = 10 V; RL = 75 Ω; T

im

--------------------------------------------------------------

10



1S

–



21

2



1S

–



11

22

dB.log=

2

Vp = VO at dim = −60 dB; fp = 795.25 MHz; Vq = VO−6 dB; Vr = VO−6 dB; fq = 803.25 MHz; fr = 805.25 MHz; measured at f

3. IC = 45 mA; VCE = 10 V; RL = 75 Ω; T

= 793.25 MHz.

(p+q−r)

= 25 °C;

amb

Vq = VO = 280 mV; fp = 250 MHz; fq = 560 MHz; measured at f

4. IC = 45 mA; VCE = 10 V; RL = 50 Ω;T

= 810 MHz.

(p+q)

= 25 °C;

amb

fp = 1000 MHz; fq = 1001 MHz; measured at f

(2p−q)

and f

(2q−p

).

September 1995 4

= 25 °C;

amb

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistor BFG94

+V

output

MBB780

CC

75 Ω

DUT

TEST

FIXTURE

INPUT SLUG TUNER

OUTPUT SLUG TUNER

BIAS

TEE

BIAS

TEE

input

output

MBB789

+V

BB

input 75 Ω

1 nF

10 kΩ

L1

2 pF

247 Ω

33 Ω 33 Ω

L3

1 nF

L2

1 nF

DUT

L1 = L3 = 5 µH micro-choke. L2 = 1 turn copper wire (0.4 mm), internal diameter 4 mm.

Fig.2 Test circuit for second and third order

intermodulation distortion.

800

handbook, halfpage

P

tot

(mW)

600

400

200

0

0 50 100 200

150

Ts (°C)

MBB790

Fig.3 Measurement set-up for third order

intercept point and 1 dB gain compression.

120

handbook, halfpage

h

FE

80

40

0

0102030

I (mA)

MCD087

C

Fig.4 Power derating curve.

September 1995 5

VCE= 10 V; Tj=25°C

Fig.5 DC current gain as a function of collector

current.

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistor BFG94

handbook, halfpage

1

C

re

(pF)

0.8

0.6

0.4

0.2

0

048 16

IC = ic = 0; f = 1 MHz.

12

V

CE

Fig.6 Feedback capacitance as a function of

collector-emitter voltage.

MBB791

(V)

handbook, halfpage

8

f

T

(GHz)

6

4

2

0

01020 40

VCE= 10 V; f = 1 GHz.

30

Fig.7 Transition frequency as a function of

collector current.

MCD089

I (mA)

C

60

handbook, halfpage

G

UM

(dB)

40

20

0

40 400 4000

Ic= 45 mA; VCE= 10 V.

f (MHz)

Fig.8 Maximum unilateral power gain as a

function of frequency.

MBB792

40

handbook, halfpage

G

UM

(dB)

30

20

10

0

10

Ic= 20 mA; VCE= 8 V.

2

10

3

10

f (MHz)

Fig.9 Maximum unilateral power gain as a

function of frequency.

MBB793

4

10

September 1995 6

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistor BFG94

20

handbook, halfpage

G

max

(dB)

15

10

5

0

10

Ic= 20 mA; VCE= 8 V.

2

10

3

10

f (MHz)

Fig.10 Maximum available stable gain as a

function of frequency.

MBB794

G

max

UM

I (mA)

MBB795

50

C

30

handbook, halfpage

gain (dB)

20

10

4

10

0

VCE= 8 V; f = 1 GHz. G

= maximum available stable gain.

max

GUM= maximum unilateral power gain.

10 20 30 40

Fig.11 Gain as a function of collector current.

20

handbook, halfpage

d

2

(dB)

40

60

80

10 30 70

Ic= 45 mA; VCE= 10 V; f See test circuit, Fig.2

= 810 MHz.

(p+q)

50

MBB782

I (mA)

C

Fig.12 Second order intermodulation distortion as

a function of collector current.

20

handbook, halfpage

d

3

(dB)

40

60

80

10 30 70

Ic= 45 mA; VCE= 10 V; f See test circuit, Fig.2

= 793.25 MHz.

(p+q−r)

50

MBB781

I (mA)

C

Fig.13 Third order intermodulation distortion as a

function of collector current.

September 1995 7

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistor BFG94

handbook, halfpage

4

F

(dB)

3

2

1

0

VCE= 8 V.

f = 2 GHz

1 GHz

500 MHz

101

I (mA)

C

Fig.14 Minimum noise figure as a function of

collector current.

MCD094

2

10

September 1995 8

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistor BFG94

handbook, full pagewidth

Ic= 15 mA; VCE= 10 V; f =500 MHz.

0.2

unstable region

+ j

0

− j

0.2

0.5

stability

circle

1

F = 1.80 dB

min

OPT

1

2 dB

1

2.5 dB

3 dB

Fig.15 Noise circle.

4 dB

5 dB

2

5

10

10520.50.2

∞

10

5

2

MBB788

handbook, full pagewidth

Ic= 15 mA; VCE= 10 V; f =1 GHz.

1

0.5

0.2

+ j

0

− j

0.2

0.5

min

F = 2.25 dB

0.5

11052

OPT

2.5 dB

3 dB

3.5 dB

1

4 dB

2

5

10

∞

10

5

5 dB

2

MBB787

Fig.16 Noise circle.

September 1995 9

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistor BFG94

handbook, full pagewidth

IC= 45 mA; VCE= 10 V.

=50Ω.

Z

O

50

25

3 GHz

10

+ j

0

– j

10

25

10 100 25050

25

50

40 MHz

100

Fig.17 Common emitter input reflection coefficient (S11).

250

∞

250

MBB784

handbook, full pagewidth

IC= 45 mA; VCE= 10 V.

90°

60°

30°

3 GHz

0°

30°

60°

MBB786

180°

120°

150°

0.4 0.20.5 0.3 0.1 40 MHz

150°

120°

90°

Fig.18 Common emitter forward transmission coefficient (S21).

+ ϕ

− ϕ

September 1995 10

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistor BFG94

handbook, full pagewidth

IC= 45 mA; VCE= 10 V.

90°

120°

150°

40 MHz

60°

30°

+ ϕ

180°

40 2050 30 10

150°

120°

3 GHz

90°

0°

− ϕ

30°

60°

MBB785

Fig.19 Common emitter reverse transmission coefficient (S12).

handbook, full pagewidth

IC= 45 mA; VCE= 10 V. ZO=50Ω.

50

25

10

+ j

0

– j

10

10 25 100 25050

25

3 GHz

50

100

40 MHz

100

Fig.20 Common emitter output reflection coefficient (S22).

250

∞

250

MBB783

September 1995 11

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistor BFG94

PACKAGE OUTLINE

Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223

D

c

y

b

1

4

132

e

1

b

p

e

w M

B

E

H

E

A

1

detail X

AB

L

X

v M

A

Q

A

p

0 2 4 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT A1b

mm

A

1.8

1.5

OUTLINE

VERSION

SOT223

0.10

0.01

cD

b

p

1

0.80

3.1

0.32

0.60

2.9

IEC JEDEC EIAJ

0.22

6.7

6.3

e

E

3.7

4.6

3.3

REFERENCES

e1HELpQywv

2.3

September 1995 12

7.3

6.7

1.1

0.7

0.95

0.85

0.1 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

96-11-11 97-02-28

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistor BFG94

DEFINITIONS

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

September 1995 13