Vishay 50WQ10FNPBF Data Sheet

D-PAK

PRODUCT SUMMARY

I

F(AV)

V

R

Schottky Rectifier, 5.5 A

FEATURES

• Popular D-PAK outline

• Small foot print, surface mountable

• Low forward voltage drop

• High frequency operation

• Guard ring for enhanced ruggedness and long term
reliability

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

DESCRIPTION

The 50WQ10FNPbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC board. Typical applications are in
disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.

Anode

Base

cathode

1

4, 2

3

Anode

5.5 A

100 V

50WQ10FNPbF

Vishay High Power Products

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

RRM

I

FSM

V

F

T

J

Rectangular waveform 5.5 A

100 V

tp = 5 µs sine 330 A

5 Apk, TJ = 125 °C 0.63 V

Range - 40 to 150 °C

VOLTAGE RATINGS

PARAMETER SYMBOL 50WQ10FNPbF UNITS

Maximum DC reverse voltage V

Maximum working peak reverse voltage V

R

RWM

100 V

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current
See fig. 5

Maximum peak one cycle
non-repetitive surge current
See fig. 7

Non-repetitive avalanche energy E

Repetitive avalanche current I

I

F(AV)

I

FSM

AR

50 % duty cycle at TC = 135 °C, rectangular waveform 5.5

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse 110

TJ = 25 °C, IAS = 0.5 A, L = 40 mH 6.0 mJ

AS

Current decaying linearly to zero in 1 µs
Frequency limited by T

maximum VA = 1.5 x VR typical

J

Following any rated load
condition and with rated
V

applied

RRM

330

0.5 A

A

Document Number: 94235 For technical questions, contact: [e-mail]
Revision: 08-Jul-09 1

www.vishay.com

50WQ10FNPbF

Vishay High Power Products

Schottky Rectifier, 5.5 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop
See fig. 1

Maximum reverse leakage current
See fig. 2

V

I

RM

Threshold voltage V

Forward slope resistance r

Typical junction capacitance C

Typical series inductance L

FM

F(TO)

t

T

S

5 A

10 A 0.91

(1)

5 A

10 A 0.74

TJ = 25 °C

(1)

T

= 125 °C 4

J

T

= 25 °C

J

= 125 °C

T

J

V

= Rated V

R

R

TJ =TJ maximum

VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 183 pF

Measured lead to lead 5 mm from package body 5.0 nH

0.77

0.63

1

0.47 V

21.46 mΩ

Note

(1)

Pulse width < 300 µs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Approximate weight

Marking device Case style D-PAK (similar to TO-252AA) 50WQ10FN

Note

dP

(1)

------------­dT

1

tot

J

thermal runaway condition for a diode on its own heatsink

--------------<
R

thJA

(1)

T

, T

J

Stg

DC operation

R

thJC

See fig. 4

- 40 to 150 °C

3.0 °C/W

0.3 g

0.01 oz.

V

mA

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94235

2 Revision: 08-Jul-09

50WQ10FNPbF

1000

100

10

- Instantaneous

F

I

Forward Current (A)

1

0.5 1.0 1.5 2.0 3.0

0

V

TJ = 150 °C

= 125 °C

T

J

T

= 25 °C

J

- Forward Voltage Drop (V)

FM

Schottky Rectifier, 5.5 A

- Reverse Current (mA)

R

I

3.52.5

Vishay High Power Products

100

10

0.1

0.01

0.001

0.0001

TJ = 150 °C

1

TJ = 125 °C

TJ = 100 °C

TJ = 75 °C

TJ = 50 °C

TJ = 25 °C

01020

40

30

V

R

50 60 80

- Reverse Voltage (V)

70

90

Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

1000

TJ = 25 °C

100

100

- Junction Capacitance (pF)

T

C

10

0

4020 60 80

V

- Reverse Voltage (V)

R

100

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10

1

0.1

- Thermal Impedance (°C/W)

thJC

Z

0.01

0.00001 0.0001 0.001 0.01 0.1 1

Single pulse

(thermal resistance)

D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

P

DM

t

1

1/t2

thJC

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

Characteristics

thJC

t

2

+ T

C

Document Number: 94235 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 08-Jul-09 3