Vishay 50RIA Series Data Sheet

50RIA Series

Vishay High Power Products

Medium Power Thyristors

(Stud Version), 50 A

					FEATURES
					• High current rating		RoHS
					• Excellent dynamic characteristics
							COMPLIANT
					• dV/dt = 1000 V/µs option
					• Superior surge capabilities
					• Standard package
					• Metric threads version available
	TO-208AC (TO-65)				• Types up to 1200 V VDRM/VRRM
					• RoHS compliant
					TYPICAL APPLICATIONS
					• Phase control applications in converters
PRODUCT SUMMARY					• Lighting circuits
IT(AV)			50 A		• Battery charges
					• Regulated power supplies and temperature and speed
					control circuit
					• Can be supplied to meet stringent military, aerospace and
					other high reliability requirements
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER			TEST CONDITIONS		VALUES		UNITS
IT(AV)					50		A
			TC		94		°C
IT(RMS)					80		A
ITSM			50 Hz		1430		A
			60 Hz		1490
I2t			50 Hz		10.18		kA2s
			60 Hz		9.30
VDRM/VRRM					100 to 1200		V
tq			Typical		110		µs
TJ					- 40 to 125		°C

Document Number: 93711	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 19-Sep-08		1

50RIA Series

Vishay High Power Products Medium Power Thyristors

(Stud Version), 50 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

			VDRM/VRRM, MAXIMUM	VRSM, MAXIMUM NON-REPETITIVE	IDRM/IRRM MAXIMUM
		VOLTAGE	REPETITIVE PEAK AND
	TYPE NUMBER			PEAK VOLTAGE (2)	AT TJ = TJ MAXIMUM
		CODE	OFF-STATE VOLTAGE (1)
				V	mA
			V
		10	100	150
		20	200	300
		40	400	500
	50RIA				15
		60	600	700
		80	800	900
		100	1000	1100
		120	1200	1300

Notes

(1)Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs

(2)For voltage pulses with tp ≤ 5 ms

ABSOLUTE MAXIMUM RATINGS

	PARAMETER	SYMBOL			TEST CONDITIONS		VALUES	UNITS
	Maximum average on-state current	IT(AV)	180° sinusoidal conduction				50	A
	at case temperature						94	°C
	Maximum RMS on-state current	IT(RMS)					80	A
			t = 10 ms		No voltage		1430
					reapplied
	Maximum peak, one-cycle	ITSM	t = 8.3 ms				1490	A
	non-repetitive surge current		t = 10 ms		100 % VRRM		1200
			t = 8.3 ms		reapplied	Sinusoidal half wave,	1255
			t = 10 ms		No voltage	initial TJ = TJ maximum	10.18
	Maximum I2t for fusing	I2t	t = 8.3 ms		reapplied		9.30	kA2s
			t = 10 ms		100 % VRRM		7.20
			t = 8.3 ms		reapplied		6.56
	Maximum I2√t for fusing	I2√t	t = 0.1 to 10 ms, no voltage reapplied,				101.8	kA2√s
			TJ = TJ maximum
	Low level value of threshold voltage	VT(TO)1	(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum				0.94	V
	High level value of threshold voltage	VT(TO)2	(π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ maximum				1.08
	Low level value of on-state	rt1	(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum				4.08
	slope resistance
								mΩ
	High level value of on-state	rt2	(π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ maximum				3.34
	slope resistance
	Maximum on-state voltage	VTM	Ipk = 157 A, TJ = 25 °C				1.60	V
	Maximum holding current	IH	TJ = 25 °C, anode supply 22 V, resistive load,				200
			initial IT = 2 A					mA
	Latching current	IL	Anode supply 6 V, resistive load				400

www.vishay.com	For technical questions, contact: [e-mail]	Document Number: 93711
2		Revision: 19-Sep-08

50RIA Series

Medium Power Thyristors Vishay High Power Products

(Stud Version), 50 A

	SWITCHING
	PARAMETER			SYMBOL			TEST CONDITIONS			VALUES	UNITS
	Maximum rate of		VDRM ≤ 600 V		TC = 125 °C, VDM = Rated VDRM,					200
				dI/dt	Gate pulse = 20 V, 15 Ω, tp = 6 µs, tr = 0.1 µs maximum						A/µs
	rise of turned-on current		VDRM ≤ 1600 V							100
					ITM = (2 x rated dI/dt) A
	Typical delay time			td	TC = 25 °C, VDM = Rated VDRM, ITM = 10 A dc resistive circuit					0.9
					Gate pulse = 10 V, 15 Ω source, tp = 20 µs
											µs
	Typical turn-off time			tq	TC = 125 °C, ITM = 50 A, reapplied dV/dt = 20 V/µs					110
					dIr/dt = - 10 A/µs, VR = 50 V
	BLOCKING
	PARAMETER			SYMBOL			TEST CONDITIONS			VALUES	UNITS
	Maximum critical rate of rise of			dV/dt	TJ = TJ maximum linear to 100 % rated VDRM					200	V/µs
	off-state voltage				T	= T maximum linear to 67 % rated V			DRM	500 (1)
					J	J
	Note
	(1) Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. 50RIA120S90
	TRIGGERING
	PARAMETER			SYMBOL			TEST CONDITIONS			VALUES	UNITS
	Maximum peak gate power			PGM	TJ = TJ maximum, tp ≤ 5 ms					10	W
	Maximum average gate power			PG(AV)						2.5
	Maximum peak positive gate current			IGM						2.5	A
	Maximum peak positive gate voltage			+VGM						20	V
	Maximum peak negative gate voltage			-VGM						10
					TJ = - 40 °C					250
								Maximum required gate trigger
	DC gate current required to trigger			IGT	TJ = 25 °C					100	mA
								current/voltage are the lowest
					TJ = 125 °C					50
								value which will trigger all units 6 V
	DC gate voltage required to trigger			VGT	TJ = - 40 °C			anode to cathode applied		3.5	V
					TJ = 25 °C					2.5
	DC gate current not to trigger			IGD	TJ = TJ maximum,			Maximum gate current/voltage not		5.0	mA
					VDRM = Rated voltage			to trigger is the maximum value
								which will not trigger any unit with
	DC gate voltage not to trigger			VGD	TJ = TJ maximum			rated VDRM anode to cathode		0.2	V
								applied

Document Number: 93711	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 19-Sep-08		3