Vishay 50RIA Series Data Sheet

Vishay High Power Products

Medium Power Thyristors

(Stud Version), 50 A

FEATURES

• High current rating

• Excellent dynamic characteristics

• dV/dt = 1000 V/µs option

• Superior surge capabilities

• Standard package

• Metric threads version available

50RIA Series

RoHS

COMPLIANT

TO-208AC (TO-65)

• Types up to 1200 V V

DRM/VRRM

• RoHS compliant

TYPICAL APPLICATIONS

• Phase control applications in converters

PRODUCT SUMMARY

I

T(AV)

50 A

• Lighting circuits

• Battery charges

• Regulated power supplies and temperature and speed
control circuit

• Can be supplied to meet stringent military, aerospace and
other high reliability requirements

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 1430

60 Hz 1490

50 Hz 10.18

60 Hz 9.30

Typical 110 µs

50 A

94 °C

80 A

A

kA2s

100 to 1200 V

- 40 to 125 °C

Document Number: 93711 For technical questions, contact: [e-mail]
Revision: 19-Sep-08 1

www.vishay.com

50RIA Series

Vishay High Power Products

Medium Power Thyristors

(Stud Version), 50 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

DRM/VRRM

TYPE NUMBER

VOLTAGE

CODE

REPETITIVE PEAK AND

OFF-STATE VOLTAGE

10 100 150

20 200 300

40 400 500

50RIA

60 600 700

80 800 900

100 1000 1100

120 1200 1300

Notes

(1)

Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs

(2)

For voltage pulses with tp ≤ 5 ms

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state
slope resistance

High level value of on-state
slope resistance

Maximum on-state voltage V

Maximum holding current I

Latching current I

I

T(AV)

T(RMS)

I

TSM

T(TO)1

T(TO)2

r

t1

r

t2

TM

H

L

, MAXIMUM

V

, MAXIMUM NON-REPETITIVE

V

RSM

(1)

PEAK VOLTAGE

V

(2)

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

MAXIMUM

mA

15

180° sinusoidal conduction

50 A

94 °C

80 A

t = 10 ms

t = 8.3 ms 1490

t = 10 ms

t = 8.3 ms 1255

t = 10 ms

t = 8.3 ms 9.30

t = 10 ms

t = 8.3 ms 6.56

No voltage
reapplied

100 % V

RRM

reapplied

No voltage
reapplied

100 % V

RRM

reapplied

Sinusoidal half wave,
initial T

= TJ maximum

J

t = 0.1 to 10 ms, no voltage reapplied,
T

= TJ maximum

J

(16.7 % x π x I
(π x I

< I < 20 x π x I

T(AV)

(16.7 % x π x I

(π x I

< I < 20 x π x I

T(AV)

T(AV)

T(AV)

< I < π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.94

T(AV)

), TJ = TJ maximum 1.08

), TJ = TJ maximum 4.08

T(AV)

), TJ = TJ maximum 3.34

1430

1200

10.18

7.20

101.8 kA

Ipk = 157 A, TJ = 25 °C 1.60 V

TJ = 25 °C, anode supply 22 V, resistive load,

= 2 A

initial I

T

200

Anode supply 6 V, resistive load 400

A

kA2s

V

mΩ

mA

2

√s

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 93711

2 Revision: 19-Sep-08

50RIA Series

Medium Power Thyristors

Vishay High Power Products

(Stud Version), 50 A

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

T

= 125 °C, VDM = Rated V

V

≤ 600 V

Maximum rate of
rise of turned-on current

DRM

≤ 1600 V 100

V

DRM

Typical delay time t

Typical turn-off time t

dI/dt

d

q

C

Gate pulse = 20 V, 15 Ω, t
I

= (2 x rated dI/dt) A

TM

TC = 25 °C, VDM = Rated V
Gate pulse = 10 V, 15 Ω source, t

TC = 125 °C, ITM = 50 A, reapplied dV/dt = 20 V/µs
dIr/dt = - 10 A/µs, V

= 50 V

R

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

= TJ maximum linear to 100 % rated V

T

Maximum critical rate of rise of
off-state voltage

dV/dt

Note

(1)

Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. 50RIA120S90

J

T

= TJ maximum linear to 67 % rated V

J

,

DRM

= 6 µs, tr = 0.1 µs maximum

p

, ITM = 10 A dc resistive circuit

DRM

= 20 µs

p

DRM

DRM

200

0.9

110

200

500

(1)

A/µs

µs

V/µs

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage +V

Maximum peak negative gate voltage -V

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GM

G(AV)

GM

GT

GT

GD

GD

TJ = TJ maximum, tp ≤ 5 ms 10

GM

GM

TJ = - 40 °C

= 25 °C 100

J

= 125 °C 50

T

J

TJ = - 40 °C 3.5

T

= 25 °C 2.5

J

TJ = TJ maximum,
V

= Rated voltage

DRM

Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units 6 V
anode to cathode applied

Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with

TJ = TJ maximum 0.2 V

rated V

anode to cathode

DRM

applied

2.5

W

2.5 A

20

10

250

mAT

5.0 mA

V

V

Document Number: 93711 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 19-Sep-08 3