VISHAY 4N 32 VIS Datasheet

Page 1
i179005
4N32, 4N33
Vishay Semiconductors
Optocoupler, Photodarlington Output, High Gain,
with Base Connection
A
C
NC
i179005_1
V
DE
6
B
5
C
4
E
1
2
3
FEATURES
• Very high current transfer ratio, 500 % min.
• High isolation resistance, 1011 typical
• Standard plastic DIP package
• Compliant to RoHS Directive to 2002/95/EC and in accordance WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code H
DESCRIPTION
The 4N32 and 4N33 are optically coupled isolators with a gallium arsenide infrared LED and a solicon photodarlington sensor.
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 (pending), avialable with option 1
• BSI IEC60950; IEC60065
•FIMKO
Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields.
ORDERING INFORMATION
4N3#-X0##T
PART NUMBER PACKAGE OPTION TAPE AND
REEL
DIP
7.62 mm
Option 7
Option 6
10.16 mm
Option 9
> 0.7 mm
> 0.1 mm
AGENCY CERTIFIED/PACKAGE CTR (%)
UL, BSI, FIMKO 500 500
DIP-6 4N32 4N33
DIP-6, 400 mil, option 6 4N32-X006 -
SMD-6, option 7 4N32-X007T
SMD-6, option 9 4N32-X009T
(1)
(1)
4N33-X007T
4N33-X009T
(1)
(1)
VDE, UL, BSI, FIMKO 500 500
DIP-6 4N32-X001 4N33-X001
SMD-6, option 7 4N32-X017T 4N33-X017T
(1)
Notes
• Additional options may be possible, please contact sales office.
(1)
Also available in tubes, do not put T on the end.
Document Number: 81865 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 1.2, 15-Feb-11 1
Page 2
4N32, 4N33
Vishay Semiconductors
Optocoupler, Photodarlington
Output, High Gain, with Base
Connection
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
Forward current I
Power dissipation P
Derate linearly from 55 °C 1.33 mW/°C
OUTPUT
Collector emitter breakdown voltage BV
Emitter base breakdown voltage BV
Collector base breakdown voltage BV
Emitter collector breakdown voltage BV
Collector (load) current I
Power dissipation P
Derate linearly 2mW/°C
COUPLER
Total dissipation P
Derate linearly 3.3 mW/°C
Isolation test voltage (between emitter 1 s V
Leakage path 7 mm min.
Air path 7 mm min.
Isolation resistance
Storage temperature T
Operating temperature T
Lead soldering time
(1)
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP).
V
= 25 °C, unless otherwise specified)
amb
3V
60 mA
100 mW
30 V
8V
50 V
5V
100 mA
150 mW
250 mW
5300 V
12
10
11
10
- 55 to + 150 °C
- 55 to + 100 °C
V
= 500 V, T
IO
= 500 V, T
IO
= 25 °C R
amb
= 100 °C R
amb
R
F
diss
CEO
EBO
CBO
ECO
C
diss
tot
ISO
IO
IO
stg
amb
at 260 °C 10 s
RMS
ELECTRICAL CHARACTERISTICS (T
= 25 °C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
Reverse current V
Capacitance V
= 50 mA V
F
= 3 V I
R
= 0 V C
R
F
R
O
1.25 1.5 V
0.1 100 μA
25 pF
OUTPUT
(1)
(1)
(1)
(1)
IC = 100 μA, IF = 0 BV
IC = 100 μA, IF = 0 BV
IC = 100 μA, IF = 0 BV
IC = 100 μA, IF = 0 BV
= 10 V, IF = 0 I
CE
I
= 0.5 mA, VCE = 5 V h
C
CEO
CBO
EBO
ECO
CEO
FE
30 V
50 V
8V
510 V
1 100 nA
13
Collector emitter breakdown voltage
Collector base breakdown voltage
Emitter base breakdown voltage
Emitter collector breakdown voltage
Collector emitter leakage current V
COUPLER
Collector emitter saturation voltage V
CEsat
1V
Coupling capacitance 1.5 pF
Notes
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
(1)
Indicates JEDEC registered values.
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 81865
2 Rev. 1.2, 15-Feb-11
Page 3
i4n32-33_02
0.1 1 10 100 1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VCE = 5 V
IF - LED Current (mA)
NCTR
CE
- Normalized CTR
CE
VCE = 5 V
I
F
= 10 mA
T
A
= 25 °C
Normalized to:
V
CE
= 1 V
i4n32-33_03
100
10.1
0.001
0.01
0.1
1
10
IF - LED Current (mA)
NI
CE
- Normalized I
CE
10
VCE = 5 V
I
F
= 10 mA
T
A
= 25 °C
Normalized to:
V
CE
= 5 V
V
CE
= 1 V
4N32, 4N33
Optocoupler, Photodarlington
Vishay Semiconductors
Output, High Gain, with Base
Connection
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Current transfer ratio V
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Turn-on time V
Turn-off time I
SAFETY AND INSULATION RATINGS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Climatic classification (according to IEC 68 part 1)
Comparative tracking index CTI 175 399
V
IOTM
V
IORM
P
SO
I
SI
T
SI
Creepage distance Standard DIP-6 7 mm
Clearance distance Standard DIP-6 7 mm
Creepage distance 400 mil DIP-6 8 mm
Clearance distance 400 mil DIP-6 8 mm
Insulation thickness, reinforced rated
Note
• As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits.
= 10 V, IF = 10 mA CTR 500 %
CE
= 10 V, IC = 50 mA t
CC
= 200 mA, RL = 180 t
F
on
off
s
100 μs
55/100/21
8000 V
890 V
700 mW
400 mA
175 °C
per IEC 60950 2.10.5.1 0.4 mm
TYPICAL CHARACTERISTICS (T
Fig. 1 - Normalized Non-Saturated and Saturated CTRCE vs.
Document Number: 81865 For technical questions, contact: optocoupleranswers@vishay.com Rev. 1.2, 15-Feb-11 3
LED Current
= 25 °C, unless otherwise specified)
amb
Fig. 2 - Normalized Non-Saturated and Saturated Collector Emitter
Current vs. LED Current
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Page 4
4N32, 4N33
i4n32-33_04
0.1 1 10 100
0.001
0.01
0.1
1
10
IF = LED Current (mA)
NI
CB
- Normalized I
CB
VCB = 3.5 V
I
F
= 10 mA
T
A
= 25 °C
Normalized to:
i4n32-33_05
0.01 0.1 1 10 100
0
2000
4000
6000
8000
10 000
VCE = 5 V
VCE = 1 V
Ib - Base Current (µA)
h
FE
- Forward Transfer Gain
TA = 25 °C
i4n32-33_06
0101520
0
20
40
60
80
TA = 25 °C, VCC = 5 V V
TH
= 1.5 V
IF - LED Current (mA)
t
pLH
- Low/High Propagation Delay (µs)
1 kΩ
5
220 Ω
470 Ω
100 Ω
i4n32-33_08
I
F
t
R
V
O
t
D
t
S
t
F
t
PHL
t
PLH
VTH = 1.5 V
R
L
V
CC
I
F
V
O
Vishay Semiconductors
Fig. 3 - Normalized Collector Base Photocurrent vs.
LED Current
Optocoupler, Photodarlington
Output, High Gain, with Base
Connection
20
15
10
5
- High/Low Propagation
pHL
Delay (µs)
t
0
0101520
i4n32-33_07
Fig. 6 - High to Low Propagation Delay vs.
Collector Load Resistance and LED Current
1 kΩ
100 Ω
5
IF - LED Current (mA)
TA = 25 °C
= 5 V
V
CC
= 1.5 V
V
TH
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com 4 Rev. 1.2, 15-Feb-11
Fig. 4 - Non-Saturated and Saturated h
Base Current
Fig. 5 - Low to High Propagation Delay vs.
Collector Load Resistance and LED Current
vs.
FE
Fig. 7 - Switching Waveform and Switching Schematic
Document Number: 81865
Page 5
i178004
0.25 typ.
2.95 ± 0.5
3.555 ± 0.255
0.8 min.
7.62 typ.
0.85 ± 0.05
2.54 typ.
1 min.
0.5 ± 0.05
6.4 ± 0.1
8.6 ± 0.1
Pin one ID
6
5
4
12
3
18°
3° to 9°
7.62 to 8.81
4° typ.
ISO method A
1.2 ± 0.1
Option 6
Option 7
20802-24
Option 9
10.16 typ.
7.62 typ.
8 min.
7.62 typ.
4.3 ± 0.3
0.6 min.
10.3 max.
0.7 min.
10.3 max.
7.62 typ.
8 min.0.6 min.
0.1 ± 0.1
3.6 ± 0.3
3.5 ± 0.3
0.1 min.
2.54
R 0.25
1.78
0.76
1.52
8 min.
11.05
2.54
R 0.25
1.78
0.76
1.52
8 min.
11.05
2.55 ± 0.25
4N32, 4N33
Optocoupler, Photodarlington
Output, High Gain, with Base
PACKAGE DIMENSIONS in millimeters
DIP-6 Package Dimensions
Vishay Semiconductors
Connection
PACKAGE MARKING
21764-18
-X017
4N32
V YWW H 68
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Notes
• Example marking for 4N32-X017T.
• Only options 1, and 7 reflected in the package marking.
• The VDE logo is only marked on option 1 parts.
• Tape and reel suffix (T) is not part of the package marking.
Document Number: 81865 For technical questions, contact: optocoupleranswers@vishay.com Rev. 1.2, 15-Feb-11 5
Page 6
Legal Disclaimer Notice
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Vishay
Disclaimer
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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