Vishay 4GBU Series Data Sheet
PART OBSOLETE - EOL18
Bulletin I2717 rev. G 05/02
4GBU Series
4.0 Amps Single Phase Full Wave Bridge Rectifier
Features
Diode chips are glass passivated
I
Suitable for Universal hole mounting
Easy to assemble & install on P.C.B.
High Surge Current Capability
High Isolation between terminals and molded case (1500 V
Lead free terminals solderable as per MIL-STD-750 Method 2026
Terminals suitable for high temperature soldering at 260°C for 8-10 secs
UL E160375 approved
RMS
)
Description
V
RRM
= 4A
O(AV)
= 50/ 800V
These GBU Series of Single Phase Bridges consist
of four glass passivated silicon junction connected
as a Full Wave Bridge. These four junctions are
encapsulated by plastic molding technique. These
Bridges are mainly used in Switch Mode power
supply and in industrial and consumer equipment.
Major Ratings and Characteristics
Parameters 4GBU Units
I
O
@ T
C
I
@ 50Hz 150 A
FSM
@ 60Hz 158 A
I2t @ 50Hz 113 A2s
@ 60Hz 104 A2s
V
range 50 to 800 V
RRM
T
J
4A
100 °C
- 55 to 150
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C
4GBU
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4GBU Series
Bulletin I2717 rev. G 05/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
Type number Code peak rev. voltage voltage @ rated V
4GBU 005 50 35 5 400
4GBU...F 01 100 70 5 400
02 200 140 5 400
04 400 280 5 400
06 600 420 5 400
08 800 560 5 400
, max repetitive V
RRM
TJ = T
max. T
J
V V µA µA
, max RMS I
RMS
= T
max. T
J
J
max. I
RRM
= 25°C T
J
RRM
Forward Conduction
Parameters 4GBU Unit Conditions
I
Maximum DC output current 4 A TC = 100°C, Resistive & inductive load
O
I
Maximum peak, one-cycle 150 t = 10ms
FSM
non-repetitive surge current,
following any rated load condition 158 t = 8.3ms TJ = 150°C
and with rated V
reapplied
RRM
I2t Maximum I2t for fusing, 113 A2s t = 10ms
initial TJ = TJ max 104 t = 8.3ms
V
Maximum peak forward voltage 1.0 V TJ = 25 oC, IFM = 4A
FM
per diode
I
Typical peak reverse leakage 5 µA TJ = 25 oC, 100% V
RM
curren t per diode
V
Maximum repetitive peak 5 0 to 8 00 V
RRM
reverse voltage range
3.2 TC = 100°C, Capacitive load
RRM
max.
RRM
@ rated V
= 150°C
J
RRM
Thermal and Mechanical Specifications
Parameters 4GBU Unit Conditions
T
Operating and storage -55 to 150
J
T
temperature range
stg
R
Max. thermal resistance 4.2 °C/ W DC rated current through bridge (1)
thJC
junction to case
R
Thermal resistance, 22 °C/ W DC rated current through bridge (1)
thJA
junction to ambient
W Approximate weight 4 (0.14) g (oz)
T Mounting Torque 1.0 Nm Bridge to Heatsink
9.0 Lb.in
Note (1): Devices mounted on 40x 40x1.5mm aluminum plate; use silicon thermal compound for maximum
heat transfer and bolt down using 3mm screw
2
o
C
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