Vishay 4GBU Series Data Sheet
PART OBSOLETE |
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EOL18 |
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Bulletin I2717 rev. G 05/02 |
4GBU Series
4.0 Amps Single Phase Full Wave |
Bridge Rectifier |
Features
Diode chips are glass passivated Suitable for Universal hole mounting Easy to assemble & install on P.C.B. High Surge Current Capability
High Isolation between terminals and molded case (1500 VRMS) Lead free terminals solderable as per MIL-STD-750 Method 2026
Terminals suitable for high temperature soldering at 260°C for 8-10 secs UL E160375 approved
IO(AV) = 4A
VRRM = 50/ 800V
Description
These GBU Series of Single Phase Bridges consist of four glass passivated silicon junction connected as a Full Wave Bridge. These four junctions are encapsulated by plastic molding technique. These Bridges are mainly used in Switch Mode power supply and in industrial and consumer equipment.
Major Ratings and Characteristics |
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Parameters |
4GBU |
Units |
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IO |
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4 |
A |
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@ TC |
100 |
°C |
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IFSM |
@50Hz |
150 |
A |
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@60Hz |
158 |
A |
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I2t |
@50Hz |
113 |
A2s |
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@60Hz |
104 |
A2s |
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4GBU |
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VRRM |
range |
50 to 800 |
V |
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T |
J |
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- 55 to 150 |
oC |
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1 |
4GBU Series
Bulletin I2717 rev. G 05/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
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Voltage |
VRRM , max repetitive |
VRMS , max RMS |
IRRM max. |
IRRM max. |
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Type number |
Code |
peak rev. voltage |
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voltage |
@ rated VRRM |
@ rated VRRM |
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TJ |
= TJ max. |
TJ |
= TJ max. |
TJ |
= 25°C |
TJ |
= 150°C |
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V |
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V |
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µA |
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µA |
4GBU |
005 |
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50 |
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35 |
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5 |
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400 |
4GBU...F |
01 |
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100 |
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70 |
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5 |
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400 |
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02 |
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200 |
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140 |
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5 |
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400 |
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04 |
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400 |
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280 |
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5 |
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400 |
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06 |
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600 |
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420 |
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5 |
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400 |
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08 |
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800 |
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560 |
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5 |
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400 |
Forward Conduction
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Parameters |
4GBU |
Unit |
Conditions |
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IO |
Maximum DC output current |
4 |
A |
TC =100°C, Resistive & inductive load |
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3.2 |
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TC =100°C,Capacitiveload |
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IFSM |
Maximumpeak, one-cycle |
150 |
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t = 10ms |
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non-repetitive surge current, |
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following any rated load condition |
158 |
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t = 8.3ms |
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TJ = 150°C |
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and with rated VRRM reapplied |
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I2t |
Maximum I2t for fusing, |
113 |
A2s |
t = 10ms |
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initial TJ = TJ max |
104 |
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t = 8.3ms |
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V |
FM |
Maximum peak forward voltage |
1.0 |
V |
T = 25 oC, I |
FM |
=4A |
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per diode |
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J |
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I |
RM |
Typicalpeakreverseleakage |
5 |
µA |
T |
J |
= 25 oC, 100% V |
RRM |
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curren t per diode |
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VRRM |
Maximum repetitive peak |
50 to 800 |
V |
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reversevoltagerange |
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Thermal and Mechanical Specifications
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Parameters |
4GBU |
Unit |
Conditions |
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T |
Operatingandstorage |
-55 to 150 |
oC |
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J |
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Tstg |
temperaturerange |
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RthJC |
Max. thermal resistance |
4.2 |
°C/ W |
DC rated current through bridge (1) |
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junction to case |
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RthJA |
Thermal resistance, |
22 |
°C/ W |
DC rated current through bridge (1) |
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junction to ambient |
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W |
Approximateweight |
4(0.14) |
g(oz) |
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T |
MountingTorque |
1.0 |
Nm |
BridgetoHeatsink |
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9.0 |
Lb.in |
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Note (1): Devices mounted on 40x 40x1.5mm aluminum plate; use silicon thermal compound for maximum |
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heat transfer and bolt down using 3mm screw |
2 |
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