Vishay 4GBL Series Data Sheet
PART OBSOLETE |
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EOL18 |
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Bulletin I2716 rev. F 06/03 |
4GBL Series
4.0 Amps Single Phase Full Wave |
Bridge Rectifier |
Features
Diode chips are glass passivated
Easy to assemble & install on P.C.B.
High Surge Current Capability
High Isolation between terminals and molded case (1500 VRMS)
Lead free terminals solderable as per MIL-STD-750 Method 2026
Terminals suitable for high temperature soldering at 260°C for 8-10 secs 
UL E160375 approved
IO(AV) = 4A
VRRM = 50/ 800V
Description
These GBL Series of Single Phase Bridges consist of four glass passivated silicon junction connected as a Full Wave Bridge. These four junctions are encapsulated by plastic molding technique. These Bridges are mainly used in Switch Mode power supply and in industrial and consumer equipment.
Major Ratings and Characteristics
Parameters |
4GBL |
Units |
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IO |
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4 |
A |
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@ TC |
50 |
°C |
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IFSM |
@50Hz |
150 |
A |
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@ 60Hz |
158 |
A |
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I2t |
@ 50Hz |
113 |
A2s |
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@ 60Hz |
104 |
A2s |
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4GBL |
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VRRM |
range |
50 to 800 |
V |
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T |
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- 55 to 150 |
oC |
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J |
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1 |
4GBL Series
Bulletin I2716 rev. F 06/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
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Voltage |
VRRM, max repetitive |
VRMS, maximum |
VRSM, max non-repetitive |
IRRM max. |
IRRM max. |
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Type number |
Code |
peak rev. voltage |
RMS voltage |
reverse voltage |
@ rated VRRM |
@ rated VRRM |
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TJ |
= TJ max. |
TJ |
= TJ max. |
TJ |
= TJ max. |
TJ |
= 25°C |
TJ |
= 150°C |
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V |
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V |
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V |
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µA |
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µA |
4GBL |
005 |
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50 |
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35 |
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75 |
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5 |
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400 |
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01 |
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100 |
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70 |
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150 |
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5 |
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400 |
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02 |
|
200 |
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140 |
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275 |
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5 |
|
400 |
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04 |
|
400 |
|
280 |
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500 |
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5 |
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400 |
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06 |
|
600 |
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420 |
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725 |
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5 |
|
400 |
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08 |
|
800 |
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560 |
|
900 |
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5 |
|
400 |
Forward Conduction
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Parameters |
4GBL |
Unit |
Conditions |
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IO |
Maximum DC output current |
4 |
A |
TC = 50°C, Resistive & inductive load |
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3.2 |
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TC = 50°C, Capacitive load |
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IFSM |
Maximum peak, one-cycle |
150 |
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t = 10ms, 20ms |
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non-repetitive surge current, |
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following any rated load condition |
158 |
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t = 8.3ms, 16.7ms |
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TJ = 150°C |
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and with rated VRRM reapplied |
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I2t |
Maximum I2t for fusing, |
113 |
A2s |
t = 10ms |
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initial TJ = TJ max |
104 |
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t = 8.3ms |
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V |
Maximum peak forward voltage |
0.975 |
V |
T = 25 oC, I |
FM |
= 4A |
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FM |
per diode |
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J |
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IRM |
Typical peak reverse leakage |
5 |
µA |
TJ = 25 oC, 100% VRRM |
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curren t per diode |
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VRRM |
Maximum repetitive peak |
50 to 800 |
V |
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reverse voltage range |
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Thermal and Mechanical Specifications
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Parameters |
4GBL |
Unit |
Conditions |
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T |
Operating and storage |
-55 to 150 |
oC |
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J |
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Tstg |
temperature range |
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RthJC |
Max. thermal resistance |
6.5 |
°C/ W |
DC rated current through bridge (1) |
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junction to case |
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RthJA |
Thermal resistance, |
22 |
°C/ W |
DC rated current through bridge (1) |
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junction to ambient |
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W |
Approximate weight |
2 (0.07) |
g (oz) |
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Note (1): Devices mounted on 75 x 75 x 3 mm aluminum plate
2 |
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