Vishay 40TPS...APbF/40TPS...PbF High Voltage Series Data Sheet

Vishay 40TPS...APbF/40TPS...PbF High Voltage Series Data Sheet

40TPS...APbF/40TPS...PbF High Voltage Series

Vishay High Power Products

Phase Control SCR, 35 A

2

(A)

TO-247AC

1 (K) (G) 3

PRODUCT SUMMARY

VT at 40 A

< 1.45 V

ITSM

500 A

VRRM

800/1200 V

DESCRIPTION/FEATURES

The 40TPS...APbF High Voltage Series of silicon

controlled rectifiers are specifically designed for

Pb-free

Available

medium power switching and phase control

RoHS*

applications. The glass passivation technology

COMPLIANT

used has reliable operation up to 125 °C junction temperature. Low Igt parts available.

Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines.

This product has been designed and qualified for industrial level and lead (Pb)-free (“PbF” suffix).

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER

TEST CONDITIONS

VALUES

UNITS

 

 

 

 

IT(AV)

Sinusoidal waveform

35

A

IRMS

 

55

 

 

VRRM/VDRM

 

800/1200

V

ITSM

 

500

A

VT

40 A, TJ = 25 °C

1.45

V

dV/dt

 

1000

V/µs

 

 

 

 

dI/dt

 

100

A/µs

 

 

 

 

TJ

 

- 40 to 125

°C

VOLTAGE RATINGS

 

VRRM/VDRM, MAXIMUM

VRSM, MAXIMUM

IRRM/IDRM

 

REPETITIVE PEAK AND

NON-REPETITIVE PEAK

PART NUMBER

AT 125 °C

OFF-STATE VOLTAGE

REVERSE VOLTAGE

 

mA

 

V

V

 

 

 

 

 

 

40TPS08APbF

800

900

 

 

 

 

 

40TPS12APbF

1200

1300

10

 

 

 

40TPS08PbF

800

900

 

 

 

 

 

40TPS12PbF

1200

1300

 

 

 

 

 

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94388

For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

Revision: 12-Sep-08

 

1

40TPS...APbF/40TPS...PbF High Voltage Series

Vishay High Power Products

Phase Control SCR, 35 A

 

 

 

 

 

 

 

 

 

 

 

ABSOLUTE MAXIMUM RATINGS

 

 

 

 

 

 

 

PARAMETER

SYMBOL

TEST CONDITIONS

 

VALUES

UNITS

 

 

 

 

 

 

Maximum average on-state current

IT(AV)

TC = 79 °C, 180° conduction half sine wave

35

 

Maximum continuous RMS

IT(RMS)

 

 

 

 

55

 

on-state current as AC switch

 

 

 

 

A

 

 

 

 

 

 

Maximum peak, one-cycle

ITSM

10 ms sine pulse, rated VRRM applied

 

500

 

non-repetitive surge current

10 ms sine pulse, no voltage reapplied

 

600

 

 

 

 

 

 

 

 

 

Initial TJ =

 

 

 

 

10 ms sine pulse, rated VRRM applied

1250

 

Maximum I2t for fusing

I2t

TJ maximum

A2s

10 ms sine pulse, no voltage reapplied

1760

 

 

 

 

 

 

 

 

 

 

 

Maximum I2√t for fusing

I2√t

t = 0.1 to 10 ms, no voltage reapplied

 

12 500

A2√s

Low level value of threshold voltage

VT(TO)1

 

 

 

 

1.02

V

High level value of threshold voltage

VT(TO)2

TJ = 125 °C

 

1.23

 

 

Low level value of on-state slope resistance

rt1

 

9.74

 

 

 

 

High level value of on-state slope resistance

rt2

 

 

 

 

7.50

 

 

 

 

 

Maximum peak on-state voltage

VTM

110 A, TJ = 25 °C

 

1.85

V

Maximum rate of rise of turned-on current

dI/dt

TJ = 25 °C

 

100

A/µs

Maximum holding current

IH

 

 

 

 

150

 

Maximum latching current

IL

 

 

 

 

300

mA

Maximum reverse and direct leakage current

IRRM/IDRM

TJ = 25 °C

VR = Rated VRRM/VDRM

0.5

 

TJ = 125 °C

10

 

 

 

 

 

 

 

Maximum rate of rise of off-state voltage 40TPS08

dV/dt

TJ = TJ maximum, linear to 80 % VDRM, Rg-k = Open

500

V/µs

 

 

Maximum rate of rise of off-state voltage 40TPS12

1000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TRIGGERING

 

 

 

 

 

 

 

PARAMETER

SYMBOL

TEST CONDITIONS

 

VALUES

UNITS

 

 

 

 

 

 

 

 

Maximum peak gate power

PGM

 

 

 

 

10

W

Maximum average gate power

PG(AV)

 

 

 

 

2.5

 

 

 

 

 

Maximum peak gate current

IGM

 

 

 

 

2.5

A

Maximum peak negative gate voltage

- VGM

 

 

 

 

10

V

Maximum required DC gate

 

TJ = - 40 °C

Anode supply = 6 V

4.0

 

VGT

TJ = 25 °C

2.5

V

voltage to trigger

resistive load

 

TJ = 125 °C

1.7

 

 

 

 

 

 

 

 

TJ = - 40 °C

 

 

270

 

Maximum required DC gate current to trigger

IGT

TJ = 25 °C

 

 

150

mA

TJ = 125 °C

 

 

80

 

 

 

 

 

 

 

TJ = 25 °C, for 40TPS08APbF and 40TPS12APbF

40

 

Maximum DC gate voltage not to trigger

VGD

TJ = 125 °C, VDRM = Rated value

 

0.25

V

Maximum DC gate current not to trigger

IGD

 

 

 

 

6

mA

www.vishay.com

For technical questions, contact: diodes-tech@vishay.com

Document Number: 94388

2

 

Revision: 12-Sep-08

40TPS...APbF/40TPS...PbF High Voltage Series

Phase Control SCR, 35 A Vishay High Power Products

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

 

SYMBOL

TEST CONDITIONS

VALUES

UNITS

 

 

 

 

 

 

 

Maximum junction and storage

 

TJ, TStg

 

- 40 to 125

°C

temperature range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum thermal resistance,

 

RthJC

 

0.6

 

junction to case

 

 

 

 

 

DC operation

 

 

 

 

 

 

 

 

Maximum thermal resistance,

 

RthJA

40

°C/W

 

 

junction to ambient

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum thermal resistance,

 

RthCS

Mounting surface, smooth and greased

0.2

 

case to heatsink

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Approximate weight

 

 

 

6

g

 

 

 

 

 

 

 

 

0.21

oz.

 

 

 

 

 

 

 

 

 

 

 

 

Mounting torque

 

minimum

 

 

6 (5)

kgf · cm

 

 

 

 

 

(lbf · in)

 

maximum

 

 

12 (10)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

40TPS08A

 

 

 

 

 

 

Marking device

 

 

Case style TO-247AC

40TPS12A

 

 

 

 

 

 

40TPS08

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

40TPS12

 

 

 

 

 

 

 

Document Number: 94388

For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

Revision: 12-Sep-08

 

3

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