40TPS...APbF/40TPS...PbF High Voltage Series
Vishay High Power Products
Phase Control SCR, 35 A
2
(A)
TO-247AC |
1 (K) (G) 3 |
PRODUCT SUMMARY
VT at 40 A |
< 1.45 V |
ITSM |
500 A |
VRRM |
800/1200 V |
DESCRIPTION/FEATURES
The 40TPS...APbF High Voltage Series of silicon
controlled rectifiers are specifically designed for |
Pb-free |
Available |
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medium power switching and phase control |
RoHS* |
applications. The glass passivation technology |
COMPLIANT |
used has reliable operation up to 125 °C junction temperature. Low Igt parts available.
Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines.
This product has been designed and qualified for industrial level and lead (Pb)-free (“PbF” suffix).
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER |
TEST CONDITIONS |
VALUES |
UNITS |
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IT(AV) |
Sinusoidal waveform |
35 |
A |
IRMS |
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55 |
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VRRM/VDRM |
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800/1200 |
V |
ITSM |
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500 |
A |
VT |
40 A, TJ = 25 °C |
1.45 |
V |
dV/dt |
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1000 |
V/µs |
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dI/dt |
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100 |
A/µs |
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TJ |
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- 40 to 125 |
°C |
VOLTAGE RATINGS
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VRRM/VDRM, MAXIMUM |
VRSM, MAXIMUM |
IRRM/IDRM |
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REPETITIVE PEAK AND |
NON-REPETITIVE PEAK |
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PART NUMBER |
AT 125 °C |
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OFF-STATE VOLTAGE |
REVERSE VOLTAGE |
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mA |
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V |
V |
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40TPS08APbF |
800 |
900 |
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40TPS12APbF |
1200 |
1300 |
10 |
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40TPS08PbF |
800 |
900 |
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40TPS12PbF |
1200 |
1300 |
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* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94388 |
For technical questions, contact: diodes-tech@vishay.com |
www.vishay.com |
Revision: 12-Sep-08 |
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40TPS...APbF/40TPS...PbF High Voltage Series
Vishay High Power Products |
Phase Control SCR, 35 A |
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ABSOLUTE MAXIMUM RATINGS |
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PARAMETER |
SYMBOL |
TEST CONDITIONS |
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VALUES |
UNITS |
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Maximum average on-state current |
IT(AV) |
TC = 79 °C, 180° conduction half sine wave |
35 |
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Maximum continuous RMS |
IT(RMS) |
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55 |
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on-state current as AC switch |
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A |
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Maximum peak, one-cycle |
ITSM |
10 ms sine pulse, rated VRRM applied |
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500 |
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non-repetitive surge current |
10 ms sine pulse, no voltage reapplied |
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600 |
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Initial TJ = |
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10 ms sine pulse, rated VRRM applied |
1250 |
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Maximum I2t for fusing |
I2t |
TJ maximum |
A2s |
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10 ms sine pulse, no voltage reapplied |
1760 |
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Maximum I2√t for fusing |
I2√t |
t = 0.1 to 10 ms, no voltage reapplied |
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12 500 |
A2√s |
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Low level value of threshold voltage |
VT(TO)1 |
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1.02 |
V |
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High level value of threshold voltage |
VT(TO)2 |
TJ = 125 °C |
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1.23 |
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Low level value of on-state slope resistance |
rt1 |
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9.74 |
mΩ |
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High level value of on-state slope resistance |
rt2 |
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7.50 |
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Maximum peak on-state voltage |
VTM |
110 A, TJ = 25 °C |
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1.85 |
V |
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Maximum rate of rise of turned-on current |
dI/dt |
TJ = 25 °C |
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100 |
A/µs |
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Maximum holding current |
IH |
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150 |
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Maximum latching current |
IL |
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300 |
mA |
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Maximum reverse and direct leakage current |
IRRM/IDRM |
TJ = 25 °C |
VR = Rated VRRM/VDRM |
0.5 |
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TJ = 125 °C |
10 |
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Maximum rate of rise of off-state voltage 40TPS08 |
dV/dt |
TJ = TJ maximum, linear to 80 % VDRM, Rg-k = Open |
500 |
V/µs |
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Maximum rate of rise of off-state voltage 40TPS12 |
1000 |
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TRIGGERING |
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PARAMETER |
SYMBOL |
TEST CONDITIONS |
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VALUES |
UNITS |
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Maximum peak gate power |
PGM |
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10 |
W |
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Maximum average gate power |
PG(AV) |
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2.5 |
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Maximum peak gate current |
IGM |
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2.5 |
A |
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Maximum peak negative gate voltage |
- VGM |
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10 |
V |
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Maximum required DC gate |
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TJ = - 40 °C |
Anode supply = 6 V |
4.0 |
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VGT |
TJ = 25 °C |
2.5 |
V |
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voltage to trigger |
resistive load |
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TJ = 125 °C |
1.7 |
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TJ = - 40 °C |
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270 |
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Maximum required DC gate current to trigger |
IGT |
TJ = 25 °C |
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150 |
mA |
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TJ = 125 °C |
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80 |
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TJ = 25 °C, for 40TPS08APbF and 40TPS12APbF |
40 |
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Maximum DC gate voltage not to trigger |
VGD |
TJ = 125 °C, VDRM = Rated value |
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0.25 |
V |
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Maximum DC gate current not to trigger |
IGD |
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6 |
mA |
www.vishay.com |
For technical questions, contact: diodes-tech@vishay.com |
Document Number: 94388 |
2 |
|
Revision: 12-Sep-08 |
40TPS...APbF/40TPS...PbF High Voltage Series
Phase Control SCR, 35 A Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER |
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SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
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Maximum junction and storage |
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TJ, TStg |
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- 40 to 125 |
°C |
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temperature range |
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Maximum thermal resistance, |
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RthJC |
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0.6 |
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junction to case |
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DC operation |
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Maximum thermal resistance, |
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RthJA |
40 |
°C/W |
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junction to ambient |
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Maximum thermal resistance, |
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RthCS |
Mounting surface, smooth and greased |
0.2 |
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case to heatsink |
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Approximate weight |
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6 |
g |
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0.21 |
oz. |
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Mounting torque |
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minimum |
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6 (5) |
kgf · cm |
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(lbf · in) |
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maximum |
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12 (10) |
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40TPS08A |
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Marking device |
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Case style TO-247AC |
40TPS12A |
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40TPS08 |
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40TPS12 |
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Document Number: 94388 |
For technical questions, contact: diodes-tech@vishay.com |
www.vishay.com |
Revision: 12-Sep-08 |
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3 |