Vishay 40EPS..PbF High Voltage Series Data Sheet
40EPS..PbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 40 A
DESCRIPTION/FEATURES
TO-247AC modified
Base
cathode
2
13
Cathode
Anode
The 40EPS..PbF rectifier High Voltage Series has
been optimized for very low forward voltage drop,
with moderate leakage. The glass passivation
technology used has reliable operation up to
150 °C junction temperature.
Typical applications are in input rectification and these
products are designed to be used with Vishay HPP
Switches and output rectifiers which are available in identical
package outlines.
PRODUCT SUMMARY
VF at 40 A 1.1 V
V
I
FSM
RRM
475 A
800/1200 V
This product has been designed and qualified for industrial
level and lead (Pb)-free.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Sinusoidal waveform 40 A
Range 800/1200 V
475 A
40 A, TJ = 25 °C 1.1 V
- 40 to 150 °C
Pb-free
Available
RoHS*
COMPLIANT
VOLTAGE RATINGS
V
, MAXIMUM
PART NUMBER
40EPS08PbF 800 900
40EPS12PbF 1200 1300
RRM
PEAK REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
2
Maximum I
Maximum I
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94343 For technical questions, contact: diodes-tech@vishay.com
Revision: 06-Jun-08 1
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 11 310 A2√s
F(AV)
I
FSM
TC = 105 °C, 180° conduction half sine wave 40
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 475
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 1131
applied 400
RRM
applied 800
RRM
A
2
A
s
www.vishay.com
40EPS..PbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 40 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
FM
t
F(TO)
RM
20 A, TJ = 25 °C 1.0
40 A, T
TJ = 150 °C
TJ = 25 °C
T
= 25 °C 1.1
J
V
= Rated V
= 150 °C 1.0
J
R
RRM
7.16 mΩ
0.74 V
0.1
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storrage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-247AC modified (JEDEC)
, T
T
J
Stg
DC operation 0.6
R
thJC
40
R
thJA
R
thCS
Mounting surface, flat, smooth and greased 0.2
- 40 to 150 °C
6g
0.21 oz.
kgf · cm
(lbf · in)
40EPS08
40EPS12
V
mA
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94343
2 Revision: 06-Jun-08
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