Vishay 40EPS..PbF High Voltage Series Data Sheet

40EPS..PbF High Voltage Series

Vishay High Power Products

Input Rectifier Diode, 40 A

DESCRIPTION/FEATURES

TO-247AC modified

Base

cathode

2

13

Cathode

Anode

The 40EPS..PbF rectifier High Voltage Series has
been optimized for very low forward voltage drop,
with moderate leakage. The glass passivation
technology used has reliable operation up to
150 °C junction temperature.

Typical applications are in input rectification and these
products are designed to be used with Vishay HPP
Switches and output rectifiers which are available in identical
package outlines.

PRODUCT SUMMARY

VF at 40 A 1.1 V

V

I

FSM

RRM

475 A

800/1200 V

This product has been designed and qualified for industrial
level and lead (Pb)-free.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

RRM

I

FSM

V

F

T

J

Sinusoidal waveform 40 A

Range 800/1200 V

475 A

40 A, TJ = 25 °C 1.1 V

- 40 to 150 °C

Pb-free

Available

RoHS*

COMPLIANT

VOLTAGE RATINGS

V

, MAXIMUM

PART NUMBER

40EPS08PbF 800 900

40EPS12PbF 1200 1300

RRM

PEAK REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT 150 °C

mA

1

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

2

Maximum I

Maximum I

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94343 For technical questions, contact: [e-mail]
Revision: 06-Jun-08 1

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 11 310 A2√s

F(AV)

I

FSM

TC = 105 °C, 180° conduction half sine wave 40

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 475

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 1131

applied 400

RRM

applied 800

RRM

A

2

A

s

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40EPS..PbF High Voltage Series

Vishay High Power Products

Input Rectifier Diode, 40 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

FM

t

F(TO)

RM

20 A, TJ = 25 °C 1.0

40 A, T

TJ = 150 °C

TJ = 25 °C

T

= 25 °C 1.1

J

V

= Rated V

= 150 °C 1.0

J

R

RRM

7.16 mΩ

0.74 V

0.1

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storrage
temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

minimum 6 (5)

maximum 12 (10)

Marking device Case style TO-247AC modified (JEDEC)

, T

T

J

Stg

DC operation 0.6

R

thJC

40

R

thJA

R

thCS

Mounting surface, flat, smooth and greased 0.2

- 40 to 150 °C

6g

0.21 oz.

kgf · cm
(lbf · in)

40EPS08

40EPS12

V

mA

°C/W

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Document Number: 94343

2 Revision: 06-Jun-08

40EPS..PbF High Voltage Series

150

145

140

135

130

125

120

115

Temperature (°C)

110

105

Maximum Allowable Case

100

95

0

30°

Average Forward Current (A)

Fig. 1 - Current Rating Characteristics

150

140

40EPS.. Series
R

40EPS.. Series
R

(DC) = 0.6 K/W

thJC

Conduction angle

60°

90°

(DC) = 0.6 K/W

thJC

Input Rectifier Diode, 40 A

Ø

120°

180°

45403530252015105

Vishay High Power Products

80

70

60

50

40

30

Power Loss (W)

20

10

Maximum Average Forward

1000

DC
180°
120°

90°

60°

30°

0

0

Average Forward Current (A)

Fig. 4 - Forward Power Loss Characteristics

RMS limit

Ø

Conduction period

40EPS.. Series

= 150°C

T

J

70605040302010

130

120

Temperture (°C)

110

Maximum Allowable Case

100

30°

60°

90°

0

2010 30 40 50 60

Average Forward Current (A)

Fig. 2 - Current Rating Characteristics

60

55

50

45

40

35

30

25

20

Power Loss (W)

15

10

Maximum Average Forward

5

0

0

180°
120°

90°
60°
30°

5

V

- Forward Voltage Drop (V)

FM

Fig. 3 - Forward Power Loss Characteristics

120°

Ø

Conduction period

180°

DC

RMS limit

Ø

Conduction angle

40EPS.. Series
T

= 150 °C

J

100

TJ = 25 °C

10

Instantaneous Forward Current (A)

1

0.5 2.0 2.51.51.0

70

0

TJ = 150 °C

40EPS.. Series

3.0

Instantaneous Forward Voltage (V)

Fig. 5 - Forward Voltage Drop Chacteristics

500

450

400

350

300

250

200

Forward Current (A)

Peak Half Sine Wave

150

40353025201510

100

0.01

Maximum non-repetitive surge current

40EPS.. Series

versus pulse train duration.

Initial TJ = 150 °C
No voltage reapplied
Rated V

0.1 1.0

RRM

reapplied

Pulse Train Duration (S)

Fig. 6 - Maximum Non-Repetitive Surge Current

Document Number: 94343 For technical questions, contact: [e-mail]

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Revision: 06-Jun-08 3

40EPS..PbF High Voltage Series

Vishay High Power Products

1

0.1

- Transient Thermal
Impedance (°C/W)

thJC

Z

0.01

0.001 0.01 0.1 1

ORDERING INFORMATION TABLE

Single pulse

Device code

Fig. 7 - Thermal Impedance Z

40 E P S 12 PbF

Input Rectifier Diode, 40 A

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

Square Wave Pulse Duration (s)

Characteristics

thJC

Steady state value:
(DC operation)

40EPS.. Series

51324

6

1 - Current rating (40 = 40 A)

2 - Circuit configuration:

E = Single diode

3 - Package:

P = TO-247AC modified

4 - Type of silicon:

S = Standard recovery rectifier

5 - Voltage rating

6 -

None = Standard production

08 = 800 V

12 = 1200 V

PbF = Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95253

Part marking information http://www.vishay.com/doc?95255

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4 Revision: 06-Jun-08

Document Number: 94343

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DIMENSIONS in millimeters and inches

Outline Dimensions

Vishay Semiconductors

(2) R/2

Q

2 x R

(2)

(5) L1

2 x b2

0.10 AC

Planting

(3)

B

C

3 x b

M M

(c)

Section C - C, D - D, E - E

E

1

2

b4

(b1, b3, b5)

(b, b2, b4)

N

3

(4)

2 x e

S

D

L

Base metal

c1

See view B

A

A2

A

D

A

C

A1

DDE E

View B

A

(6)

ΦP

M M

Ø K BD

D2

Thermal pad

Lead assignments

Diodes

1. - Anode/open

C

C

2. - Cathode

3. - Anode

(Datum B)

ΦP1

D1 (4)

4

(4)
E1

View A - A

SYMBOL

MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

MILLIMETERS INCHES

NOTES

A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -

b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 K 2.54 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.3
b5 2.59 3.38 0.102 0.133 P 3.56 3.66 0.14 0.144

c 0.38 0.86 0.015 0.034  P1 - 6.98 - 0.275
c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224

D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216

D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC

Notes

(1)

Dimensioning and tolerance per ASME Y14.5M-1994

(2)

Contour of slot optional

(3)

Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body

(4)

Thermal pad contour optional with dimensions D1 and E1

(5)

Lead finish uncontrolled in L1

(6)

P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")

(7)

Outline conforms to JEDEC outline TO-247 with exception of dimension c

Revision: 21-Jun-11

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1

, [e-mail], [e-mail]

Document Number: 95253

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