VISHAY 40EPS08 VIS Datasheet

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Base

cathode

2

13

Cathode Anode

TO-247AC 2L

1

3

High Voltage, Input Rectifier Diode, 40 A

PRIMARY CHARACTERISTICS

I

F(AV)

V

R

V

at I

F

F

I

FSM

T

max. 150 °C

J

Package TO-247AC 2L

Circuit configuration Single

800 V to 1200 V

40 A

1.1 V

475 A

VS-40EPS..-M3 Series

Vishay Semiconductors

FEATURES

• Very low forward voltage drop

• 150 °C max. operating junction temperature

• Glass passivated pellet chip junction

• Designed and qualified according to

• Material categorization: for definitions of compliance

APPLICATIONS

• Input rectification

• Vishay Semiconductors switches and output rectifiers

DESCRIPTION

High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.

These devices are intended for use in main rectification
(single or three phase bridge).

®

JEDEC

-JESD 47

please see www.vishay.com/doc?99912

which are available in identical package outlines

Available

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

I

FSM

V

T

RRM

F

J

Sinusoidal waveform 40 A

Range 800/1200 V

475 A

40 A, TJ = 25 °C 1.1 V

-40 to +150 °C

VOLTAGE RATINGS

PART NUMBER

PEAK REVERSE VOLTAGE

, MAXIMUM

V

RRM

V

VS-40EPS08-M3 800 900

VS-40EPS12-M3 1200 1300

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT 150 °C

mA

1

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I
Maximum peak one cycle

non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 11 310 A2√s

F(AV)

I

FSM

TC = 105 °C, 180° conduction half sine wave 40

10 ms sine pulse, rated V

applied 400

RRM

10 ms sine pulse, no voltage reapplied 475

10 ms sine pulse, rated V

applied 800

RRM

10 ms sine pulse, no voltage reapplied 1131

A

2

s

A

Revision: 11-Jun-2021

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Document Number: 94343

95

135

140

145

150

130

125

120

115

110

105

100

Maximum Allowable Case

Temperature (°C)

Average Forward Current (A)

45403530252015105

0

30°

60°

90°

120°

180°

VS-40EPS.. Series
R

thJC

(DC) = 0.6 K/W

Conduction angle

Ø

VS-40EPS..-M3 Series

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ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

FM

F(TO)

RM

20 A, TJ = 25 °C 1.0

= 25 °C 1.1

J

= Rated V

V

= 150 °C 1.0

J

R

t

40 A, T

TJ = 150 °C

TJ = 25 °C

T

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storrage
temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

Marking device

minimum 6 (5)

maximum 12 (10)

T

, T

J

Stg

R

DC operation 0.6

thJC

40

R

thJA

R

thCS

Mounting surface, flat, smooth, and greased 0.2

Case style TO-247AC 2L 40EPS08

Case style TO-247AC modified 40EPS12

Vishay Semiconductors

V

7.16 mΩ

0.74 V

RRM

0.1

-40 to +150 °C

6g

0.21 oz.

mA

°C/W

kgf · cm
(lbf · in)

Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics

Revision: 11-Jun-2021

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150

140

130

120

30°

Temperture (°C)

110

Maximum Allowable Case

100

0

VS-40EPS.. Series
R

(DC) = 0.6 K/W

thJC

Ø

Conduction period

60°

90°

120°

180°

2010 30 40 50 60

DC

70

Average Forward Current (A)

2

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5

0

10

15

20

25

35

30

40

45

50

55

60

Maximum Average Forward

Power Loss (W)

V

FM

- Forward Voltage Drop (V)

5

40353025201510

0

RMS limit

180°
120°

90°
60°
30°

VS-40EPS.. Series
T

J

= 150 °C

Conduction angle

Ø

40

30

50

60

70

80

20

10

0

Maximum Average Forward

Power Loss (W)

Average Forward Current (A)

70605040302010

0

DC
180°
120°

90°

60°

30°

RMS limit

VS-40EPS.. Series
T

J

= 150°C

Ø

Conduction period

1

100

10

1000

Instantaneous Forward Current (A)

Instantaneous Forward Voltage (V)

0.5 2.0 2.51.51.0

3.0

0

TJ = 25 °C

TJ = 150 °C

VS-40EPS.. Series

400

450

500

350

300

250

200

150

100

Peak Half Sine Wave

Forward Current (A)

Pulse Train Duration (S)

0.1 1.00.01

Maximum non-repetitive surge current

VS-40EPS.. Series

Initial TJ = 150 °C
No voltage reapplied
Rated V

RRM

reapplied

versus pulse train duration.

VS-40EPS..-M3 Series

Vishay Semiconductors

Fig. 3 - Forward Power Loss Characteristics

Fig. 4 - Forward Power Loss Characteristics

1

0.1

- Transient Thermal
Impedance (°C/W)

thJC

Revision: 11-Jun-2021

Z

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0.01

0.001 0.01 0.1 1

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Fig. 5 - Forward Voltage Drop Chacteristics

Fig. 6 - Maximum Non-Repetitive Surge Current

Steady state value:
(DC operation)

D = 0.50
D = 0.33
D = 0.25

Single pulse

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

D = 0.17
D = 0.08

Square Wave Pulse Duration (s)

Fig. 7 - Thermal Impedance Z

3

VS-40EPS.. Series

Characteristics

thJC

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Document Number: 94343