Vishay 40EPF..PbF Soft Recovery Series Data Sheet

40EPF..PbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 40 A
Vishay High Power Products
Base
common
cathode
2
FEATURES/DESCRIPTION
The 40EPF..PbF fast soft recovery rectifier series has been optimized for combined short reverse
recovery time and low forward voltage drop.
The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions.
TO-247AC modified
13
Cathode Anode
This product series has been designed and qualified for industrial level and lead (Pb)-free.
PRODUCT SUMMARY
VF at 20 A < 1.25 V
t
rr
V
RRM
95 ns
1000/1200 V
APPLICATIONS
• Output rectification and freewheeling in inverters, choppers and converters
• Input rectifications where severe restrictions on conducted EMI should be met
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
RRM
I
F(AV)
I
FSM
t
rr
V
F
T
J
Sinusoidal waveform 40
1 A, 100 A/µs 95 ns
20 A, TJ = 25 °C 1.25 V
1000/1200 V
475
- 40 to 150 °C
A
Pb-free
Available
RoHS*
COMPLIANT
VOLTAGE RATINGS
, MAXIMUM PEAK
V
RRM
PART NUMBER
40EPF10PbF 1000 1100
40EPF12PbF 1200 1300
REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
10
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle non-repetitive surge current
Maximum I
Maximum I
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94103 For technical questions, contact: diodes-tech@vishay.com Revision: 08-Jul-08 1
t for fusing I2t
t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 11 310 A2√s
F(AV)
I
FSM
TC = 105 °C, 180° conduction half sine wave 40
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 475
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 1131
applied 400
RRM
applied 800
RRM
A
A
s
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40EPF..PbF Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery
Rectifier Diode, 40 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
FM
t
F(TO)
RM
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
Reverse recovery current I
Reverse recovery charge Q
rr
rr
rr
Snap factor S 0.5
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, junction to ambient
Typical thermal resistance, case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-247AC modified (JEDEC)
T
, T
J
R
thJC
R
thJA
R
thCS
40 A, TJ = 25 °C 1.4 V
6.82 mΩ
0.94 V
0.1
- 40 to 150 °C
Stg
TJ = 125 °C
TJ = 25 °C
T
= 150 °C 10
J
IF at 10 Apk
25 A/µs 25 °C
V
= Rated V
R
RRM
450 ns
6A
1.8 µC
DC operation 0.6
40
Mounting surface, smooth and greased 0.2
6g
0.21 oz.
I
FM
dir
dt
40EPF10
40EPF12
t
rr
kgf · cm
(Ibf · in)
mA
I
RM(REC)
°C/W
t
Q
rr
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Document Number: 94103
2 Revision: 08-Jul-08
40EPF..PbF Soft Recovery Series
150
140
130
120
110
100
90
Temperature (°C)
80
Maximum Allowable Case
70
60
0
150
140
130
120
110
100
90
Temperature (°C)
80
Maximum Allowable Case
70
60
40EPF.. Series
(DC) = 0.6 °C/W
R
thJC
30°
Ø
Conduction angle
10520
60°
90°
15
25 30 35 40 45
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
40EPF.. Series
(DC) = 0.6 °C/W
R
thJC
Conduction period
60°
30°
90°
18
120°
10 20 40 50 60 70
0
30
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Fast Soft Recovery
Rectifier Diode, 40 A
18
120°
Ø
DC
90
80
70
60
50
40
30
Power Loss (W)
20
Maximum Average Forward
10
450
400
350
300
250
200
Forward Current (A)
Peak Half Sine Wave
150
100
Vishay High Power Products
DC 180° 120°
90°
60°
30°
RMS limit
0
0 20304050607010
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
At any rated load condition and with rated V
40EPF.. Series
1 10 100
applied following surge.
RRM
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Ø
Conduction period
40EPF.. Series T
= 150 °C
J
Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s
70
60
50
40
30
Power Loss (W)
20
Maximum Average Forward
10
180° 120°
90° 60° 30°
RMS limit
Ø
Conduction angle
40EPF.. Series T
= 150 °C
J
0
0
10 155
20
25 30 35 40 45
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
500
450
400
350
300
250
200
Forward Current (A)
Peak Half Sine Wave
150
100
0.01 0.1 1
Maximum non-repetitive surge current versus pulse train duration.
Initial TJ = 150 °C No voltage reapplied Rated V
40EPF.. Series
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
RRM
reapplied
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Revision: 08-Jul-08 3
40EPF..PbF Soft Recovery Series
Vishay High Power Products
1000
100
10
Instantaneous Forward Current (A)
1
0.7
0.6
0.5
0.4
0.3
- Maximum Reverse
rr
t
0.2
Recovery Time (µs)
0.1
0
04080 120 160 200
IFM = 10 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
40EPF.. Series
= 25 °C
T
J
IFM = 5 A
IFM = 40 A
Fast Soft Recovery
Rectifier Diode, 40 A
TJ = 25 °C
= 150 °C
T
J
40EPF.. Series
01234 6
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
IFM = 30 A
IFM = 1 A
= 25 °C
J
5
6
40EPF.. Series T
J
5
4
3
Recovery Charge (µC)
2
1
0
04080 120 160 200
- Maximum Reverse
rr
Q
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
= 25 °C
IFM = 40 A
IFM = 30 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
= 25 °C
J
2.0
- Maximum Reverse
rr
t
Recovery Time (µs)
1.6
1.2
0.8
0.4
0
04080 120 160 200
IFM = 60 A
= 40 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
I
FM
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
40EPF.. Series
= 150 °C
T
J
= 150 °C
J
20
40EPF.. Series
= 150 °C
T
J
16
12
8
- Maximum Reverse
rr
Recovery Charge (µC)
4
Q
0
04080 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
IFM = 60 A
IFM = 40 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
= 150 °C
J
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Document Number: 94103
4 Revision: 08-Jul-08
40EPF..PbF Soft Recovery Series
Fast Soft Recovery
Vishay High Power Products
Rectifier Diode, 40 A
30
25
20
15
10
- Maximum Reverse Recovery Current (A)
rr
I
5
0
40EPF.. Series
= 25 °C
T
J
04080 120 160 200
IFM = 40 A
IFM = 30 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
1
50
40EPF.. Series
= 150 °C
T
J
40
30
20
- Maximum Reverse Recovery Current (A)
rr
10
I
0
040
IFM = 10 A
80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Steady state value
(DC operation)
IFM = 60 A
IFM = 40 A
IFM = 20 A
IFM = 5 A
IFM = 1 A
Single pulse
0.1
- Transient Thermal Impedance (°C/W)
thJC
Z
Fig. 14 - Thermal Impedance Z
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
Square Wave Pulse Duration (s)
Characteristics
thJC
40EPF.. Series
100.0001 0.001 0.01 0.1 1
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Revision: 08-Jul-08 5
40EPF..PbF Soft Recovery Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
40 E P F 12 PbF
1
2
3
4 - Type of silicon:
5
6
Fast Soft Recovery
Rectifier Diode, 40 A
51324
- Current rating (40 = 40 A)
- Circuit configuration:
E = Single diode
- Package:
P = TO-247AC modified
F = Fast diode
- Voltage code x 100 = V
- None = Standard production
PbF = Lead (Pb)-free
RRM
6
10 = 1000 V 12 = 1200 V
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95223
Part marking information http://www.vishay.com/doc?95226
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Document Number: 94103
DIMENSIONS in millimeters and inches
(3)
B
(2) R/2
D
E
E/2
S
TO-247 modified
A
A2
A
Outline Dimensions
Vishay High Power Products
A
D2
(6)
ΦP
(Datum B)
ΦP1
SYMBOL
2 x R
(2)
1
2
(5) L1
C
2 x b2
3 x b
Planting
(c)
Section C - C, D - D, E - E
b4
(b1, b3, b5)
(b, b2, b4)
(4)
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
3
2 x e
D
L
Base metal
c1
See view B
C
A1
DDE E
View B
NOTES SYMBOL
D
A
C
C
Thermal pad
Lead assignments
HEXFET
1. - Gate
2. - Drain
3. - Source
4. - Drain
IGBTs, CoPAK
1. - Gate
2. - Collector
3. - Emitter
4. - Collector
4
(4) E1
View A - A
MILLIMETERS INCHES
D1 (4)
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
NOTES
A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051 A1 2.21 2.49 0.059 0.098 E 15.29 15.87 0.602 0.625 3 A2 1.50 0.098 1.50 2.49 E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC b1 0.99 1.35 0.039 0.053 ΦK 2.54 0.010 b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 N 7.62 BSC 3 b5 2.59 3.38 0.102 0.133 ΦP 3.56 3.66 0.14 0.144
c 0.38 0.86 0.015 0.034 ΦP1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224
D 19.71 20.70 0.776 0.815 3 R 0.452 5.49 0.178 0.216 D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC
Notes
(1)
Dimensioning and tolerance per ASME Y14.5M-1994
(2)
Contour of slot optional
(3)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body
(4)
Thermal pad contour optional with dimensions D1 and E1
(5)
Lead finish uncontrolled in L1
(6)
ΦP to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7)
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Document Number: 95253 For technical questions concerning discrete products, contact: diodes-tech@vishay.com
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Revision: 11-Mar-08 For technical questions concerning module products, contact: ind-modules@vishay.com
1
Assembly lot code
xxxxxxx
V P119X
A
Part Marking Information
Vishay High Power Products
TO-247 modified
Example: This is a xxxxxxx with assembly lot code AC,
Part number
C
Product version (optional):
P = Lead (Pb)-free None = Standard
Date code: Year 1 = 2001 Week 19 Line X
assembled on WW 19, 2001 in the assembly line ”X”
Document Number: 95255 For technical questions concerning discrete products, contact: diodes-tech@vishay.com Revision: 28-Nov-08 For technical questions concerning module products, contact: ind-modules@vishay.com
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Vishay

Disclaimer

All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.
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