40EPF..PbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 40 A
Vishay High Power Products
Base
common
cathode
2
FEATURES/DESCRIPTION
The 40EPF..PbF fast soft recovery rectifier series
has been optimized for combined short reverse
recovery time and low forward voltage drop.
The glass passivation ensures stable reliable
operation in the most severe temperature and power cycling
conditions.
TO-247AC modified
13
Cathode Anode
This product series has been designed and qualified for
industrial level and lead (Pb)-free.
PRODUCT SUMMARY
VF at 20 A < 1.25 V
t
rr
V
RRM
95 ns
1000/1200 V
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
• Input rectifications where severe restrictions on conducted
EMI should be met
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
RRM
I
F(AV)
I
FSM
t
rr
V
F
T
J
Sinusoidal waveform 40
1 A, 100 A/µs 95 ns
20 A, TJ = 25 °C 1.25 V
1000/1200 V
475
- 40 to 150 °C
A
Pb -free
Av ailab le
RoHS*
COMPLIANT
VOLTAGE RATINGS
, MAXIMUM PEAK
V
RRM
PART NUMBER
40EPF10PbF 1000 1100
40EPF12PbF 1200 1300
REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
10
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
2
Maximum I
Maximum I
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94103 For technical questions, contact: diodes-tech@vishay.com
Revision: 08-Jul-08 1
t for fusing I2t
2
√ t for fusing I 2√ t t = 0.1 to 10 ms, no voltage reapplied 11 310 A 2√ s
F(AV)
I
FSM
TC = 105 °C, 180° conduction half sine wave 40
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 475
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 1131
applied 400
RRM
applied 800
RRM
A
2
A
s
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40EPF..PbF Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery
Rectifier Diode, 40 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
FM
t
F(TO)
RM
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
Reverse recovery current I
Reverse recovery charge Q
rr
rr
rr
Snap factor S 0.5
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-247AC modified (JEDEC)
T
, T
J
R
thJC
R
thJA
R
thCS
40 A, TJ = 25 °C 1.4 V
6.82 mΩ
0.94 V
0.1
- 40 to 150 °C
Stg
TJ = 125 °C
TJ = 25 °C
T
= 150 °C 10
J
IF at 10 Apk
25 A/µs
25 °C
V
= Rated V
R
RRM
450 ns
6A
1.8 µC
DC operation 0.6
40
Mounting surface, smooth and greased 0.2
6g
0.21 oz.
I
FM
dir
dt
40EPF10
40EPF12
t
rr
kgf · cm
(Ibf · in)
mA
I
RM(REC)
°C/W
t
Q
rr
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Document Number: 94103
2 Revision: 08-Jul-08
40EPF..PbF Soft Recovery Series
150
140
130
120
110
100
90
Temperature (°C)
80
Maximum Allowable Case
70
60
0
150
140
130
120
110
100
90
Temperature (°C)
80
Maximum Allowable Case
70
60
40EPF.. Series
(DC) = 0.6 °C/W
R
thJC
30°
Ø
Condu ction angle
10 52 0
60°
90°
15
25 30 35 40 45
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
40EPF.. Series
(DC) = 0.6 °C/W
R
thJC
Condu ction period
60°
30°
90°
18 0°
120°
10 20 40 50 60 70
0
30
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Fast Soft Recovery
Rectifier Diode, 40 A
18 0°
120°
Ø
DC
90
8 0
70
60
50
40
30
Power Loss (W)
20
Maximum Average Forward
10
450
400
350
300
250
200
Forward Current (A)
Peak Half Sine Wave
150
100
Vishay High Power Products
DC
18 0°
120°
90°
60°
30°
RMS limit
0
0 2 03 04 05 06 07 0 10
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
At any rated load condition and w ith
rated V
40EPF.. Series
1 10 100
applied follow ing su rge.
RRM
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Ø
Conduction period
40EPF.. Series
T
= 150 °C
J
Initial TJ = 150 °C
at 60 Hz 0.008 3 s
at 50 Hz 0.0100 s
70
60
50
40
30
Power Loss (W)
20
Maximum Average Forward
10
18 0°
120°
90°
60°
30°
RMS limit
Ø
Condu ction angle
40EPF.. Series
T
= 150 °C
J
0
0
10 15 5
20
25 30 35 40 45
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
500
450
400
350
300
250
200
Forward Current (A)
Peak Half Sine Wave
150
100
0.01 0.1 1
Maximu m non-repetitiv e su rge cu rrent
v ersu s pu lse train du ration.
Initial TJ = 150 °C
N o v oltage reapplied
Rated V
40EPF.. Series
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
RRM
reapplied
Document Number: 94103 For technical questions, contact: diodes-tech@vishay.com
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Revision: 08-Jul-08 3
40EPF..PbF Soft Recovery Series
Vishay High Power Products
1000
100
10
Instantaneous Forward Current (A)
1
0.7
0.6
0.5
0.4
0.3
- Maximum Reverse
rr
t
0.2
Recovery Time (µs)
0.1
0
04 080 120 160 200
IFM = 10 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
40EPF.. Series
= 25 °C
T
J
IFM = 5 A
IFM = 40 A
Fast Soft Recovery
Rectifier Diode, 40 A
TJ = 25 °C
= 150 °C
T
J
40EPF.. Series
01234 6
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
IFM = 30 A
IFM = 1 A
= 25 °C
J
5
6
40EPF.. Series
T
J
5
4
3
Recovery Charge (µC)
2
1
0
04 080 120 160 200
- Maximum Reverse
rr
Q
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
= 25 °C
IFM = 40 A
IFM = 30 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
= 25 °C
J
2.0
- Maximum Reverse
rr
t
Recovery Time (µs)
1.6
1.2
0.8
0.4
0
04 080 120 160 200
IFM = 60 A
= 40 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
I
FM
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
40EPF.. Series
= 150 °C
T
J
= 150 °C
J
20
40EPF.. Series
= 150 °C
T
J
16
12
8
- Maximum Reverse
rr
Recovery Charge (µC)
4
Q
0
04 080 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
IFM = 60 A
IFM = 40 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
= 150 °C
J
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Document Number: 94103
4 Revision: 08-Jul-08
40EPF..PbF Soft Recovery Series
Fast Soft Recovery
Vishay High Power Products
Rectifier Diode, 40 A
30
25
20
15
10
- Maximum Reverse
Recovery Current (A)
rr
I
5
0
40EPF.. Series
= 25 °C
T
J
04 080 120 160 200
IFM = 40 A
IFM = 30 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
1
50
40EPF.. Series
= 150 °C
T
J
40
30
20
- Maximum Reverse
Recovery Current (A)
rr
10
I
0
04 0
IFM = 10 A
8 0 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Steady state v alu e
(DC operation)
IFM = 60 A
IFM = 40 A
IFM = 20 A
IFM = 5 A
IFM = 1 A
Single pu lse
0.1
- Transient Thermal Impedance (°C/W)
thJC
Z
Fig. 14 - Thermal Impedance Z
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Square Wave Pulse Duration (s)
Characteristics
thJC
40EPF.. Series
10 0.0001 0.001 0.01 0.1 1
Document Number: 94103 For technical questions, contact: diodes-tech@vishay.com
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Revision: 08-Jul-08 5
40EPF..PbF Soft Recovery Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
40 E P F 12 PbF
1
2
3
4 - Type of silicon:
5
6
Fast Soft Recovery
Rectifier Diode, 40 A
5 13 24
- Current rating (40 = 40 A)
- Circuit configuration:
E = Single diode
- Package:
P = TO-247AC modified
F = Fast diode
- Voltage code x 100 = V
- None = Standard production
PbF = Lead (Pb)-free
RRM
6
10 = 1000 V
12 = 1200 V
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95223
Part marking information http://www.vishay.com/doc?95226
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6 Revision: 08-Jul-08
Document Number: 94103
DIMENSIONS in millimeters and inches
(3)
B
(2) R/2
D
E
E/2
S
TO-247 modified
A
A2
A
Outline Dimensions
Vishay High Power Products
A
D2
(6)
Φ P
(Datu m B)
Φ P1
SYMBOL
2 x R
(2)
1
2
(5) L1
C
2 x b 2
3 x b
Planting
(c)
Section C - C, D - D, E - E
b 4
(b 1, b 3, b 5)
(b , b 2, b 4)
(4)
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
3
2 x e
D
L
Base metal
c1
See v iew B
C
A1
DDE E
V iew B
NOTES SYMBOL
D
A
C
C
Thermal pad
Lead assignments
HEXFET
1. - Gate
2. - Drain
3. - Sou rce
4. - Drain
IGBTs, CoPAK
1. - Gate
2. - Collector
3. - Emitter
4. - Collector
4
(4)
E1
V iew A - A
MILLIMETERS INCHES
D1 (4)
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
NOTES
A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.49 0.059 0.098 E 15.29 15.87 0.602 0.625 3
A2 1.50 0.098 1.50 2.49 E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 Φ K 2.54 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 3
b5 2.59 3.38 0.102 0.133 Φ P 3.56 3.66 0.14 0.144
c 0.38 0.86 0.015 0.034 Φ P1 - 6.98 - 0.275
c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224
D 19.71 20.70 0.776 0.815 3 R 0.452 5.49 0.178 0.216
D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC
Notes
(1)
Dimensioning and tolerance per ASME Y14.5M-1994
(2)
Contour of slot optional
(3)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
Thermal pad contour optional with dimensions D1 and E1
(5)
Lead finish uncontrolled in L1
(6)
Φ P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7)
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Document Number: 95253 For technical questions concerning discrete products, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 11-Mar-08 For technical questions concerning module products, contact: ind-modules@vishay.com
1
Assemb ly
lot code
xxxxxxx
V P119X
A
Part Marking Information
Vishay High Power Products
TO-247 modified
Example: This is a xxxxxxx with
assembly lot code AC,
Part numb er
C
Produ ct v ersion (optional):
P = Lead (Pb)-free
N one = Standard
Date code:
Year 1 = 2001
Week 19
Line X
assembled on WW 19, 2001
in the assemb ly line ”X”
Document Number: 95255 For technical questions concerning discrete products, contact: diodes-tech@vishay.com
Revision: 28-Nov-08 For technical questions concerning module products, contact: ind-modules@vishay.com
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1
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Disclaimer
All product specifications and data are subject to change without notice.
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Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1