Vishay 40CTQ150PBF Data Sheet

40CTQ150PbF

Vishay High Power Products

Schottky Rectifier, 2 x 20 A

 

Base

2

 

 

common

 

 

 

cathode

 

 

TO-220AB

Anode

2

Anode

1 Common 3

 

 

cathode

 

FEATURES

 

• 175 °C TJ operation

 

• Center tap TO-220 package

Pb-free

• Very low forward voltage drop

Available

RoHS*

• High frequency operation

COMPLIANT

 

High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

Guard ring for enhanced ruggedness and long term reliability

Lead (Pb)-free (“PbF” suffix)

• Designed and qualified for industrial level

PRODUCT SUMMARY

IF(AV)

2 x 20 A

VR

150 V

DESCRIPTION

The 40CTQ... center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

 

 

 

 

SYMBOL

 

CHARACTERISTICS

 

VALUES

UNITS

 

 

 

 

 

 

 

 

 

 

 

IF(AV)

Rectangular waveform

 

 

40

A

 

VRRM

 

 

 

 

 

150

V

 

IFSM

tp = 5 µs sine

 

 

1500

A

 

VF

20 Apk, TJ = 125 °C (per leg)

 

0.71

V

 

TJ

 

 

 

 

 

- 55 to 175

°C

 

 

 

 

 

 

 

 

 

 

 

 

VOLTAGE RATINGS

 

 

 

 

 

 

 

 

 

PARAMETER

 

 

 

SYMBOL

 

40CTQ150PbF

UNITS

 

 

 

 

 

 

 

 

 

 

 

Maximum DC reverse voltage

 

 

 

VR

 

150

V

 

Maximum working peak reverse voltage

 

 

VRWM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ABSOLUTE MAXIMUM RATINGS

 

 

 

 

 

 

PARAMETER

 

SYMBOL

 

TEST CONDITIONS

VALUES

 

UNITS

 

 

 

 

 

 

 

 

 

 

 

Maximum average

per leg

 

 

 

 

 

20

 

 

forward current

 

 

IF(AV)

 

50 % duty cycle at TC = 140 °C, rectangular waveform

 

 

 

 

per device

 

40

 

 

See fig. 5

 

 

 

 

 

 

A

 

 

 

 

 

 

 

 

 

 

Maximum peak one cycle non-repetitive

 

 

5 µs sine or 3 µs rect. pulse

Following any rated load

1500

 

 

surge current per leg

 

IFSM

 

 

 

condition and with rated

 

 

 

 

 

10 ms sine or 6 ms rect. pulse

250

 

 

See fig. 7

 

 

 

VRRM applied

 

 

Non-repetitive avalanche energy per leg

EAS

 

TJ = 25 °C, IAS = 1.5 A, L = 0.9 mH

1.0

 

mJ

Repetitive avalanche current per leg

IAR

 

Current decaying linearly to zero in 1 µs

1.5

 

A

 

Frequency limited by TJ maximum VA = 1.5 x VR typical

 

 

 

 

 

 

 

 

 

* Pb containing terminations are not RoHS compliant, exemptions may apply

 

 

 

 

 

 

 

 

 

 

 

 

 

Document Number: 94214

For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

Revision: 13-Aug-08

 

 

 

 

 

 

 

 

1

40CTQ150PbF

Vishay High Power Products Schottky Rectifier, 2 x 20 A

ELECTRICAL SPECIFICATIONS

 

 

 

 

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

 

 

 

 

 

 

 

 

 

20 A

TJ = 25 °C

0.93

 

 

 

 

 

 

 

Maximum forward voltage drop per leg

VFM (1)

40 A

1.16

V

 

See fig. 1

20 A

TJ = 125 °C

0.71

 

 

 

 

 

 

 

 

 

 

 

40 A

0.85

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum reverse leakage current per leg

IRM (1)

TJ = 25 °C

VR = Rated VR

50

µA

See fig. 2

TJ = 125 °C

15

mA

 

 

Maximum junction capacitance per leg

CT

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C

450

pF

Typical series inductance per leg

LS

Measured lead to lead 5 mm from package body

8.0

nH

Maximum voltage rate of change

dV/dt

Rated VR

10 000

V/µs

Note

 

 

 

 

 

(1) Pulse width < 300 µs, duty cycle < 2 %

 

 

 

 

 

 

 

 

 

 

THERMAL - MECHANICAL SPECIFICATIONS

 

 

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

 

 

 

 

 

 

 

Maximum junction and storage

TJ, TStg

 

 

- 55 to 175

°C

temperature range

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum thermal resistance,

 

DC operation

1.5

 

junction to case per leg

 

See fig. 4

 

RthJC

 

 

 

 

 

 

 

 

Maximum thermal resistance,

DC operation

0.75

°C/W

 

junction to case per package

 

 

 

 

 

 

 

 

 

 

 

 

 

Typical thermal resistance,

RthCS

Mounting surface, smooth and greased

0.5

 

case to heatsink

 

 

 

 

 

 

 

 

 

 

 

 

 

Approximate weight

 

 

 

2

g

 

 

 

 

 

 

 

 

0.07

oz.

 

 

 

 

 

 

 

 

 

 

 

 

Mounting torque

minimum

 

Non-lubricated threads

6 (5)

kgf · cm

 

 

 

(lbf · in)

maximum

 

12 (10)

 

 

 

 

 

 

 

 

 

 

Marking device

 

Case style TO-220AB

40CTQ150

 

 

 

 

 

 

 

www.vishay.com

For technical questions, contact: diodes-tech@vishay.com

Document Number: 94214

2

 

Revision: 13-Aug-08

Vishay 40CTQ150PBF Data Sheet

40CTQ150PbF

Schottky Rectifier, 2 x 20 A Vishay High Power Products

<![if ! IE]>

<![endif]>(A)

100

 

 

 

 

 

<![if ! IE]>

<![endif]>ForwardCurrent

 

 

 

TJ = 175 °C

<![if ! IE]>

<![endif]>CurrentReverse(mA)

 

10

 

 

TJ = 125 °C

 

<![if ! IE]>

<![endif]>Instantaneous

 

 

 

TJ = 25 °C

 

 

 

 

 

 

<![if ! IE]>

<![endif]>I

 

 

 

 

 

 

<![if ! IE]>

<![endif]>-

 

 

 

 

 

 

<![if ! IE]>

<![endif]>R

<![if ! IE]>

<![endif]>-

1

 

 

 

 

 

<![if ! IE]>

<![endif]>F

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>I

0

0.4

0.8

1.2

1.6

 

 

 

 

 

VFM - Forward Voltage Drop (V)

 

 

Fig. 1 - Maximum Forward Voltage Drop Characteristics

 

1000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

TJ = 175 °C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

TJ =

150 °C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 125 °C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

TJ = 100 °C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

 

TJ = 75 °C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 50 °C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.01

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ

= 25 °C

 

 

 

 

0.001

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

20

40

60

80

100

120

140

160

VR - Reverse Voltage (V)

Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

<![if ! IE]>

<![endif]>CT - Junction Capacitance (pF)

1000

TJ = 25 °C

100

10

0

40

80

120

160

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

<![if ! IE]>

<![endif]>(°C/W)

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>Impedance

1

 

 

 

 

 

 

 

 

 

 

 

 

 

PDM

 

 

 

 

 

 

 

t1

 

<![if ! IE]>

<![endif]>Thermal

 

 

 

 

D = 0.75

 

 

 

 

 

 

 

 

 

0.1

 

Single pulse

 

D = 0.50

 

t2

 

 

 

D = 0.33

 

 

 

 

 

 

 

 

 

 

 

(thermal resistance)

 

 

 

 

 

 

 

D = 0.25

Notes:

 

 

<![if ! IE]>

<![endif]>-

 

 

 

 

D = 0.20

1. Duty factor D = t1/t2

 

<![if ! IE]>

<![endif]>thJC

 

 

 

 

 

 

 

 

 

 

2. Peak TJ = PDM x ZthJC + TC

 

<![if ! IE]>

<![endif]>Z

0.01

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.00001

0.0001

0.001

0.01

0.1

1

10

100

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

Document Number: 94214

For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

Revision: 13-Aug-08

 

3

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