TO-220AB
Schottky Rectifier, 2 x 20 A
FEATURES
• 175 °C TJ operation
• Center tap TO-220 package
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
Anode
Base
common
cathode
Common
1 3
cathode
2
Anode
2
40CTQ150PbF
Vishay High Power Products
Pb-free
Available
RoHS*
COMPLIANT
PRODUCT SUMMARY
I
F(AV)
V
R
2 x 20 A
150 V
The 40CTQ... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
DESCRIPTION
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 40 A
150 V
tp = 5 µs sine 1500 A
20 Apk, TJ = 125 °C (per leg) 0.71 V
- 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 40CTQ150PbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
150 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94214 For technical questions, contact: diodes-tech@vishay.com
Revision: 13-Aug-08 1
per leg
per device 40
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 140 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 250
TJ = 25 °C, IAS = 1.5 A, L = 0.9 mH 1.0 mJ
AS
Current decaying linearly to zero in 1 µs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
20
1500
1.5 A
A
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40CTQ150PbF
Vishay High Power Products
Schottky Rectifier, 2 x 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
20 A
Maximum forward voltage drop per leg
See fig. 1
V
FM
40 A 1.16
(1)
20 A
40 A 0.85
Maximum reverse leakage current per leg
See fig. 2
I
RM
Maximum junction capacitance per leg C
Typical series inductance per leg L
TJ = 25 °C
(1)
T
= 125 °C 15 mA
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 450 pF
T
Measured lead to lead 5 mm from package body 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.93
0.71
50 µA
10 000 V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum
maximum 12 (10)
Marking device Case style TO-220AB 40CTQ150
T
, T
J
Stg
DC operation
See fig. 4
R
thJC
- 55 to 175 °C
1.5
DC operation 0.75
R
thCS
Mounting surface, smooth and greased 0.5
2g
0.07 oz.
Non-lubricated threads
6 (5)
kgf · cm
(lbf · in)
V
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94214
2 Revision: 13-Aug-08
40CTQ150PbF
100
10
- Instantaneous Forward Current (A)
1
F
I
0.4 0.8 1.2 1.60
V
- Forward Voltage Drop (V)
FM
Schottky Rectifier, 2 x 20 A
TJ = 175 °C
= 125 °C
T
J
T
= 25 °C
J
- Reverse Current (mA)
R
I
Vishay High Power Products
1000
100
10
1
0.1
0.01
0.001
0
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
4020 60 80
V
- Reverse Voltage (V)
R
100 120 140
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
160
TJ = 25 °C
100
- Junction Capacitance (pF)
T
C
10
0
VR - Reverse Voltage (V)
8040 120
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.75
0.1
Single pulse
(thermal resistance)
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 10 1
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t1 - Rectangular Pulse Duration (s)
160
P
DM
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
1/t2
t
1
thJC
t
2
+ T
C
100
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
Document Number: 94214 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 13-Aug-08 3