Datasheet 2N7002E Datasheet (Vishay) [ru]

N-Channel 60-V (D-S) MOSFET

V

PRODUCT SUMMARY

V

(V)

DS

60 3 @ VGS = 10 V 240

r

DS(on)

(W)

FEATURES BENEFITS APPLICATIONS

D Low On-Resistance: 3 W
D Low Threshold: 2 V (typ)
D Low Input Capacitance: 25 pF
D Fast Switching Speed: 7.5 ns
D Low Input and Output Leakage

D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage

I

D

(mA)

D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,

Display, Memories, Transistors, etc.

D Battery Operated Systems
D Solid-State Relays

2N7002E

Vishay Siliconix

TO-236

(SOT-23)

Marking Code: 7Ewl

G

1

3

D

2

S

Top View

Ordering Information: 2N7002E-T1

E = Part Number Code for 2N7002E

w = Week Code
l = Lot Traceability

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current

Power Dissipation

Thermal Resistance, Junction-to-Ambient R

Operating Junction and Storage Temperature Range TJ, T

a

_

TA = 25_C

TA = 70_C

TA = 25_C

TA = 70_C

I

I

DM

P

thJA

DS

GS

D

D

stg

60

"20

240

190

1300

0.35

0.22

357

-55 to 150

mA

W

_C/W

_C

Notes
a. Pulse width limited by maximum junction temperature.

Document Number: 70860
S-31987—Rev. D, 13-Oct-03

www.vishay.com

1

2N7002E

b

b

ID ^ 250 mA

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Conditions Min Typ

Static

Limits

a

Max Unit

Drain-Source Breakdown Voltage V

Gate-Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage V

Dynamic

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Switching

Turn-On Time t

Turn-Off Time t

Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.

a

a, c

b

(BR)DSS

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

fs

SD

g

gs

gd

iss

oss

rss

on

off

VGS = 0 V, ID = 10 mA

VDS = VGS, ID = 250 mA

VDS = 0 V, VGS = "15 V "10 nA

VDS = 60 V, VGS = 0 V 1

VDS = 60 V, VGS = 0 V, TC = 125_C

VGS = 10 V, VDS = 7.5 V 800 1300

VGS = 4.5 V, VDS = 10 V 500 700

VGS = 10 V, ID = 250 mA 1.2 3

VGS = 4.5 V, ID = 200 mA 1.8 4

VDS = 15 V, ID = 200 mA 600 mS

IS = 200 mA, VGS = 0 V 0.85 1.2 V

VDS = 10 V, VGS = 4.5 V

^ 250 mA

I

D

VDS = 5 V, VGS = 0 V, f = 1 MHz

VDD = 10 V, RL = 40 W

ID ^ 250 mA, V

R

G

GEN

= 10 W

= 10V

60 68

1 2 2.5

500

0.4 0.6

0.06

0.06

21

7

2.5

13 20

18 25

V

mA

mA

W

nC

pF

ns

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Document Number: 70860

S-31987—Rev. D, 13-Oct-03

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

2N7002E

Vishay Siliconix

1.0

VGS = 10, 9, 8, 7, 6 V

0.8

0.6

0.4

- Drain Current (A)

D

I

0.2

0.0
012345

VDS - Drain-to-Source Voltage (V)

5 V

4 V

3 V

On-Resistance vs. Gate-Source Voltage On-Resistance vs. Drain Current

4

3

ID @ 250 mA

2

Output Characteristics Transfer Characteristics

- On-Resistance ( Ω )

DS(on)

r

1

ID @ 75 mA

1.2

TJ = -55_C

0.9

0.6

- Drain Current (A)

D

I

0.3

0.0
01234567

- Gate-to-Source Voltage (V)

V

GS

3.5

3.0

2.5

VGS = 4.5 V

2.0

VGS = 10 V

- On-Resistance ( Ω )

DS(on)

r

1.5

1.0

0.5

25_C

125_C

0

0246810

On-Resistance vs. Junction Temperature

2.0

1.6

1.2

(Normalized)

0.8

- On-Resistance ( Ω )

DS(on)

r

0.4

0.0

-50 -25 0 25 50 75 100 125 150

Document Number: 70860
S-31987—Rev. D, 13-Oct-03

VGS = 10 V @ 250 mA

VGS = 4.5 V
@ 200 mA

TJ - Junction Temperature (_C)

0.0

0.0 0.2 0.4 0.6 0.8 1.0

I

- Drain Current (A)VGS - Gate-to-Source Voltage (V)

D

Threshold Voltage Variance Over Temperature

0.4

0.2

ID = 250 mA

-0.0

-0.2

- Variance (V)

-0.4

GS(th)

V

-0.6

-0.8

-50 -25 0 25 50 75 100 125 150

- Junction Temperature (_C)

T

J

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2N7002E

Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

40

32

24

16

C - Capacitance (pF)

8

0

0 5 10 15 20 25

VDS - Drain-to-Source Voltage (V)

Capacitance

C

iss

C

1.0
VDS = 30 V

= 0.25 A

I

D

0.8

0.6

0.4

oss

C

rss

- Gate-to-Source Voltage (V)

0.2

GS

V

0.0

0.0 0.1 0.2 0.3 0.4 0.5

Gate Charge

Qg - Total Gate Charge (nC)

Source-Drain Diode Forward Voltage

2

1

TJ = 85_C

- Source Current (A)

S

I

0.1

0 0.2 0.4 0.6 0.8 1.0 1.2

25_C

VSD - Source-to-Drain Voltage (V)

-55_C

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Document Number: 70860

S-31987—Rev. D, 13-Oct-03

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Vishay

Notice

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or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

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Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1